Large-area niobium disulfide thin films as transparent electrodes for devices based on two-dimensional materials

Hunyoung Bark, Yongsuk Choi, Jaehyuck Jung, Jung Hwa Kim, Hyukjoon Kwon, Jinhwan Lee, Zonghoon Lee, Jeong Ho Cho, Changgu Lee

Research output: Contribution to journalArticle

14 Citations (Scopus)

Abstract

Direct contacts of a metal with atomically thin two-dimensional (2D) transition metal dichalcogenide (TMDC) semiconductors have been found to suppress device performance by producing a high contact resistance. NbS2 is a 2D TMDC and a conductor. It is expected to form ohmic contacts with 2D semiconductors because of its high work function and the van der Waals interface it forms with the semiconductor, with such an interface resulting in weak Fermi level pinning. Despite the usefulness of NbS2 as an electrode, previous synthesis methods could not control the thickness, uniformity, and shape of the NbS2 film and hence could not find practical applications in electronics. Here, we report a patternable method for carrying out the synthesis of NbS2 films in which the number of NbS2 layers formed over a large area was successfully controlled, which is necessary for the production of customized electrodes. The synthesized NbS2 films were shown to be highly transparent and uniform in thickness and conductivity over the large area. Furthermore, the synthesized NbS2 showed half the contact resistance than did the molybdenum metal in MoS2 field effect transistors (FETs) on a large transparent quartz substrate. The MoS2 device with NbS2 showed an electron mobility as high as 12.7 cm2 V-1 s-1, which was three times higher than that found for the corresponding molybdenum-contacted MoS2 device. This result showed the high potential of the NbS2 thin film as a transparent electrode for 2D transition metal dichalcogenide (TMDC) semiconductors with low contact resistance.

Original languageEnglish
Pages (from-to)1056-1062
Number of pages7
JournalNanoscale
Volume10
Issue number3
DOIs
Publication statusPublished - 2018 Jan 21

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Niobium
Disulfides
Contact resistance
Semiconductor materials
Transition metals
Thin films
Electrodes
Molybdenum
Metals
Quartz
Ohmic contacts
Electron mobility
Field effect transistors
Fermi level
Electronic equipment
Substrates

All Science Journal Classification (ASJC) codes

  • Materials Science(all)

Cite this

Bark, Hunyoung ; Choi, Yongsuk ; Jung, Jaehyuck ; Kim, Jung Hwa ; Kwon, Hyukjoon ; Lee, Jinhwan ; Lee, Zonghoon ; Cho, Jeong Ho ; Lee, Changgu. / Large-area niobium disulfide thin films as transparent electrodes for devices based on two-dimensional materials. In: Nanoscale. 2018 ; Vol. 10, No. 3. pp. 1056-1062.
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abstract = "Direct contacts of a metal with atomically thin two-dimensional (2D) transition metal dichalcogenide (TMDC) semiconductors have been found to suppress device performance by producing a high contact resistance. NbS2 is a 2D TMDC and a conductor. It is expected to form ohmic contacts with 2D semiconductors because of its high work function and the van der Waals interface it forms with the semiconductor, with such an interface resulting in weak Fermi level pinning. Despite the usefulness of NbS2 as an electrode, previous synthesis methods could not control the thickness, uniformity, and shape of the NbS2 film and hence could not find practical applications in electronics. Here, we report a patternable method for carrying out the synthesis of NbS2 films in which the number of NbS2 layers formed over a large area was successfully controlled, which is necessary for the production of customized electrodes. The synthesized NbS2 films were shown to be highly transparent and uniform in thickness and conductivity over the large area. Furthermore, the synthesized NbS2 showed half the contact resistance than did the molybdenum metal in MoS2 field effect transistors (FETs) on a large transparent quartz substrate. The MoS2 device with NbS2 showed an electron mobility as high as 12.7 cm2 V-1 s-1, which was three times higher than that found for the corresponding molybdenum-contacted MoS2 device. This result showed the high potential of the NbS2 thin film as a transparent electrode for 2D transition metal dichalcogenide (TMDC) semiconductors with low contact resistance.",
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Bark, H, Choi, Y, Jung, J, Kim, JH, Kwon, H, Lee, J, Lee, Z, Cho, JH & Lee, C 2018, 'Large-area niobium disulfide thin films as transparent electrodes for devices based on two-dimensional materials', Nanoscale, vol. 10, no. 3, pp. 1056-1062. https://doi.org/10.1039/c7nr07593f

Large-area niobium disulfide thin films as transparent electrodes for devices based on two-dimensional materials. / Bark, Hunyoung; Choi, Yongsuk; Jung, Jaehyuck; Kim, Jung Hwa; Kwon, Hyukjoon; Lee, Jinhwan; Lee, Zonghoon; Cho, Jeong Ho; Lee, Changgu.

In: Nanoscale, Vol. 10, No. 3, 21.01.2018, p. 1056-1062.

Research output: Contribution to journalArticle

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T1 - Large-area niobium disulfide thin films as transparent electrodes for devices based on two-dimensional materials

AU - Bark, Hunyoung

AU - Choi, Yongsuk

AU - Jung, Jaehyuck

AU - Kim, Jung Hwa

AU - Kwon, Hyukjoon

AU - Lee, Jinhwan

AU - Lee, Zonghoon

AU - Cho, Jeong Ho

AU - Lee, Changgu

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AB - Direct contacts of a metal with atomically thin two-dimensional (2D) transition metal dichalcogenide (TMDC) semiconductors have been found to suppress device performance by producing a high contact resistance. NbS2 is a 2D TMDC and a conductor. It is expected to form ohmic contacts with 2D semiconductors because of its high work function and the van der Waals interface it forms with the semiconductor, with such an interface resulting in weak Fermi level pinning. Despite the usefulness of NbS2 as an electrode, previous synthesis methods could not control the thickness, uniformity, and shape of the NbS2 film and hence could not find practical applications in electronics. Here, we report a patternable method for carrying out the synthesis of NbS2 films in which the number of NbS2 layers formed over a large area was successfully controlled, which is necessary for the production of customized electrodes. The synthesized NbS2 films were shown to be highly transparent and uniform in thickness and conductivity over the large area. Furthermore, the synthesized NbS2 showed half the contact resistance than did the molybdenum metal in MoS2 field effect transistors (FETs) on a large transparent quartz substrate. The MoS2 device with NbS2 showed an electron mobility as high as 12.7 cm2 V-1 s-1, which was three times higher than that found for the corresponding molybdenum-contacted MoS2 device. This result showed the high potential of the NbS2 thin film as a transparent electrode for 2D transition metal dichalcogenide (TMDC) semiconductors with low contact resistance.

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