Large-area synthesis of transition metal dichalcogenides: Via CVD and solution-based approaches and their device applications

Anh Tuan Hoang, Kairui Qu, Xiang Chen, Jong Hyun Ahn

Research output: Contribution to journalReview articlepeer-review

Abstract

For the last decade, two-dimensional transition metal dichalcogenides (TMDCs) have attracted considerable attention due to their unique physical and chemical properties. Novel devices based on these materials are commonly fabricated using the exfoliated samples, which lacks control of the thickness and cannot be scaled. Therefore, the synthesis of large-area TMDC thin films with a high uniformity to advance the field is required. This article reviews the latest advances in the synthesis of wafer-scale thin films using chemical vapor deposition methods. The key factors that determine the electrical performance of TMDCs are introduced, including the interfacial properties and defects. The latest solution-based techniques which suggest the opportunity to obtain large-area TMDC thin films with a low-cost process and the potential applications in electronics and optoelectronics are also discussed. The outlook for future research directions, challenges, and possible development of 2D materials are further discussed. This journal is

Original languageEnglish
Pages (from-to)615-633
Number of pages19
JournalNanoscale
Volume13
Issue number2
DOIs
Publication statusPublished - 2021 Jan 14

Bibliographical note

Funding Information:
This work was financially supported by the National Research Foundation of Korea (NRF-2015R1A3A2066337), the National Natural Science Foundation of China (92064007 and 91964103), the Natural Science Foundation of Jiangsu Province (BK20190476), and the Fundamental Research Funds for the Central Universities (30919011296) of China.

Publisher Copyright:
© The Royal Society of Chemistry.

All Science Journal Classification (ASJC) codes

  • Materials Science(all)

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