We demonstrate 500 x 500 μm2 large scale polygrain MoS2 nanosheets and field effect transistor (FET) circuits integrated using those nanosheets, which are initially grown on SiO2/p+-Si by chemical vapor deposition but transferred onto glass substrate to be patterned by photolithography. In fact, large scale growth of two-dimensional MoS2 and its conventional way of patterning for integrated devices have remained as one of the unresolved important issues. In the present study, we achieved maximum linear mobility of ∼9 cm2 V-1 s-1 from single-domain MoS2 FET on SiO2/p+-Si substrate and 0.5-3.0 cm2 V-1 s-1 from large scale MoS2 sheet transferred onto glass. Such reduced mobility is attributed to the transfer process-induced wrinkles and crevices, domain boundaries, residue on MoS2, and loss of the back gate-charging effects that might exist due to SiO2/p+-Si substrate. Among 16 MoS2-based FETs, 13 devices successfully work (yield was more than 80%) producing NOT, NOR, and NAND logic circuits. Inverter (NOT gate) shows quite a high voltage gain over 12 at a supply voltage of 5 V, also displaying 60 μs switching speed in kilohertz dynamics.
Bibliographical noteFunding Information:
The authors (H Kwon, P J Jeon, J S Kim and S Im) acknowledge the financial support from NRF (NRL program: Grant No. 2014R1A2A1A01004815), from the Ministry of Trade, Industry and Energy (the Global Leading Technology Program: Grant No. 10042433-2012-11), the Yonsei University (Future-leading Research Initiative of 2014: Grant No. 2014-22-0168), The authors (T-Y Kim and T Lee) appreciate the financial support received from the National Creative Research Laboratory program (Grant No. 2012026372) through the National Research Foundation of Korea (NRF) and Brain Korea 21 plus Program.
All Science Journal Classification (ASJC) codes
- Materials Science(all)
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering