The large-scale synthesis of two-dimensional transition metal dichalcogenides has been actively investigated in recent years. Here, we introduce a nonconventional synthesis process of 2-in.-scale monolayer MoS2 with fairly good uniform coverage, which is based on a unique reaction mechanism due to the self-limiting precursor source in a proximity reaction environment with a distance of only âˆ0.5 mm from the reaction zone. The large-scale MoS2 monolayer film was successfully synthesized using an atmospheric pressure chemical vapor deposition reaction of precursor Mo film in flowing H2S gas through an indirect sulfurization sequence with the oxidized Mo species. The short distance of ~0.5 mm provides a unique advantage of uniformity with the self-limiting reaction due to the limited MoO3-x supply. The chemical states of the precursor and deposited films at reaction temperatures were investigated to determine the reaction mechanism of the synthesis. This processing technique is extendable to other two-dimensional materials demanding large-scale coverage with good uniformity.
Bibliographical noteFunding Information:
This work was financially supported by grants from the National Research Foundation of Korea (NRF-2016M3A7B4910151), the Industrial Strategic Technology Development Program (#10079981), the Korea Institute of Energy Technology Evaluation and Planning (No. 20173010013340) funded by the Ministry of Trade, Industry, & Energy (MOTIE) of Korea, and the Creative Materials Discovery Program by the Ministry of Science and ICT (2018M3D1A1058536).
© 2020 American Chemical Society.
All Science Journal Classification (ASJC) codes
- Materials Science(all)
- Condensed Matter Physics