Large spin accumulation and crystallographic dependence of spin transport in single crystal gallium nitride nanowires

Tae Eon Park, Youn Ho Park, Jong Min Lee, Sung Wook Kim, Hee Gyum Park, Byoung Chul Min, Hyung Jun Kim, Hyun Cheol Koo, Heon-Jin Choi, Suk Hee Han, Mark Johnson, Joonyeon Chang

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

Semiconductor spintronics is an alternative to conventional electronics that offers devices with high performance, low power and multiple functionality. Although a large number of devices with mesoscopic dimensions have been successfully demonstrated at low temperatures for decades, room-Temperature operation still needs to go further. Here we study spin injection in single-crystal gallium nitride nanowires and report robust spin accumulation at room temperature with enhanced spin injection polarization of 9%. A large Overhauser coupling between the electron spin accumulation and the lattice nuclei is observed. Finally, our single-crystal gallium nitride samples have a trigonal cross-section defined by the (001), () and () planes. Using the Hanle effect, we show that the spin accumulation is significantly different for injection across the (001) and () (or ()) planes. This provides a technique for increasing room temperature spin injection in mesoscopic systems.

Original languageEnglish
Article number15722
JournalNature communications
Volume8
DOIs
Publication statusPublished - 2017 Jun 1

Fingerprint

Nanowires
gallium nitrides
nanowires
Single crystals
Injections
Temperature
single crystals
injection
room temperature
Equipment and Supplies
Magnetoelectronics
Semiconductors
Crystal lattices
Electronic equipment
electron spin
Electrons
Polarization
Semiconductor materials
gallium nitride
nuclei

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Biochemistry, Genetics and Molecular Biology(all)
  • Physics and Astronomy(all)

Cite this

Park, Tae Eon ; Park, Youn Ho ; Lee, Jong Min ; Kim, Sung Wook ; Park, Hee Gyum ; Min, Byoung Chul ; Kim, Hyung Jun ; Koo, Hyun Cheol ; Choi, Heon-Jin ; Han, Suk Hee ; Johnson, Mark ; Chang, Joonyeon. / Large spin accumulation and crystallographic dependence of spin transport in single crystal gallium nitride nanowires. In: Nature communications. 2017 ; Vol. 8.
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abstract = "Semiconductor spintronics is an alternative to conventional electronics that offers devices with high performance, low power and multiple functionality. Although a large number of devices with mesoscopic dimensions have been successfully demonstrated at low temperatures for decades, room-Temperature operation still needs to go further. Here we study spin injection in single-crystal gallium nitride nanowires and report robust spin accumulation at room temperature with enhanced spin injection polarization of 9{\%}. A large Overhauser coupling between the electron spin accumulation and the lattice nuclei is observed. Finally, our single-crystal gallium nitride samples have a trigonal cross-section defined by the (001), () and () planes. Using the Hanle effect, we show that the spin accumulation is significantly different for injection across the (001) and () (or ()) planes. This provides a technique for increasing room temperature spin injection in mesoscopic systems.",
author = "Park, {Tae Eon} and Park, {Youn Ho} and Lee, {Jong Min} and Kim, {Sung Wook} and Park, {Hee Gyum} and Min, {Byoung Chul} and Kim, {Hyung Jun} and Koo, {Hyun Cheol} and Heon-Jin Choi and Han, {Suk Hee} and Mark Johnson and Joonyeon Chang",
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Park, TE, Park, YH, Lee, JM, Kim, SW, Park, HG, Min, BC, Kim, HJ, Koo, HC, Choi, H-J, Han, SH, Johnson, M & Chang, J 2017, 'Large spin accumulation and crystallographic dependence of spin transport in single crystal gallium nitride nanowires', Nature communications, vol. 8, 15722. https://doi.org/10.1038/ncomms15722

Large spin accumulation and crystallographic dependence of spin transport in single crystal gallium nitride nanowires. / Park, Tae Eon; Park, Youn Ho; Lee, Jong Min; Kim, Sung Wook; Park, Hee Gyum; Min, Byoung Chul; Kim, Hyung Jun; Koo, Hyun Cheol; Choi, Heon-Jin; Han, Suk Hee; Johnson, Mark; Chang, Joonyeon.

In: Nature communications, Vol. 8, 15722, 01.06.2017.

Research output: Contribution to journalArticle

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AU - Park, Tae Eon

AU - Park, Youn Ho

AU - Lee, Jong Min

AU - Kim, Sung Wook

AU - Park, Hee Gyum

AU - Min, Byoung Chul

AU - Kim, Hyung Jun

AU - Koo, Hyun Cheol

AU - Choi, Heon-Jin

AU - Han, Suk Hee

AU - Johnson, Mark

AU - Chang, Joonyeon

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AB - Semiconductor spintronics is an alternative to conventional electronics that offers devices with high performance, low power and multiple functionality. Although a large number of devices with mesoscopic dimensions have been successfully demonstrated at low temperatures for decades, room-Temperature operation still needs to go further. Here we study spin injection in single-crystal gallium nitride nanowires and report robust spin accumulation at room temperature with enhanced spin injection polarization of 9%. A large Overhauser coupling between the electron spin accumulation and the lattice nuclei is observed. Finally, our single-crystal gallium nitride samples have a trigonal cross-section defined by the (001), () and () planes. Using the Hanle effect, we show that the spin accumulation is significantly different for injection across the (001) and () (or ()) planes. This provides a technique for increasing room temperature spin injection in mesoscopic systems.

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