Large spin accumulation and crystallographic dependence of spin transport in single crystal gallium nitride nanowires

Tae Eon Park, Youn Ho Park, Jong Min Lee, Sung Wook Kim, Hee Gyum Park, Byoung Chul Min, Hyung Jun Kim, Hyun Cheol Koo, Heon Jin Choi, Suk Hee Han, Mark Johnson, Joonyeon Chang

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Abstract

Semiconductor spintronics is an alternative to conventional electronics that offers devices with high performance, low power and multiple functionality. Although a large number of devices with mesoscopic dimensions have been successfully demonstrated at low temperatures for decades, room-Temperature operation still needs to go further. Here we study spin injection in single-crystal gallium nitride nanowires and report robust spin accumulation at room temperature with enhanced spin injection polarization of 9%. A large Overhauser coupling between the electron spin accumulation and the lattice nuclei is observed. Finally, our single-crystal gallium nitride samples have a trigonal cross-section defined by the (001), () and () planes. Using the Hanle effect, we show that the spin accumulation is significantly different for injection across the (001) and () (or ()) planes. This provides a technique for increasing room temperature spin injection in mesoscopic systems.

Original languageEnglish
Article number15722
JournalNature communications
Volume8
DOIs
Publication statusPublished - 2017 Jun 1

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All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Biochemistry, Genetics and Molecular Biology(all)
  • Physics and Astronomy(all)

Cite this

Park, T. E., Park, Y. H., Lee, J. M., Kim, S. W., Park, H. G., Min, B. C., Kim, H. J., Koo, H. C., Choi, H. J., Han, S. H., Johnson, M., & Chang, J. (2017). Large spin accumulation and crystallographic dependence of spin transport in single crystal gallium nitride nanowires. Nature communications, 8, [15722]. https://doi.org/10.1038/ncomms15722