Laser crystallization of a-Si:H films prepared at ultra low temperature(<150°C) by catalytic CVD

Sung Hyun Lee, Wan Shick Hong, Jong Mm Kim, Hyuck Lim, Kuyng Bae Park, Chul Lae Cho, Kyung Eun Lee, Do Young Kim, Ji Sim Jung, Jang Yeon Kwon, Takashi Noguch

Research output: Contribution to journalConference articlepeer-review

Abstract

We studied laser crystallization of amorphous silicon films prepared at ultra low temperatures (150°C). Amorphous silicon films having a low content of hydrogen were deposited by using catalytic chemical vapor deposition method. Influence of process parameters on the hydrogen content was investigated. Laser crystallization was performed dispensing with the preliminary dehydrogenation process. Crystallization took place at a laser energy density value as low as 70 mJ/cm2, and the grain size increased with increasing the laser energy. The ELA crystallization of Catalytic CVD a-Si film is a promising candidate for Poly-Si TFT in active-matrix flexible display on plastic substrates.

Original languageEnglish
Pages (from-to)1116-1118
Number of pages3
JournalProceedings of International Meeting on Information Display
Volume2
Publication statusPublished - 2006
Event5th International Meeting on Information Display - Seoul, Korea, Republic of
Duration: 2005 Jul 192005 Jul 23

All Science Journal Classification (ASJC) codes

  • Engineering(all)

Fingerprint

Dive into the research topics of 'Laser crystallization of a-Si:H films prepared at ultra low temperature(<150°C) by catalytic CVD'. Together they form a unique fingerprint.

Cite this