Laser-direct parallel patterning of metal thin films

Jin Soo Lee, Hyeong Jae Lee, Myeong Kyu Lee

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Thin film patterning by the conventional lithographic technique requires a number of steps including the deposition, development, and removal of the photoresist layer. We report that metal thin films can be directly photoetched by a pulsed neodymium doped yttrium aluminum garnet laser beam irradiating the film surface. This process utilizes a laser-induced thermoelastic force, which plays a role to detach the film from the underlying layer. High-fidelity patterns at the micrometer scales have been fabricated using a spatially modulated laser beam. A zinc-tin-oxide thin film transistor with photoetched Al source and drain electrodes exhibited an on/off ratio higher than 10 5 and a very low off-current level. This indicates that the channel area between electrodes was completely etched out, making any additional cleaning or etching steps unnecessary. We also demonstrate that transparent thin films such as ITO can be patterned using a metal thin film as a dynamic release layer.

Original languageEnglish
Title of host publicationPhysics of Semiconductors - 30th International Conference on the Physics of Semiconductors, ICPS-30
Pages919-920
Number of pages2
DOIs
Publication statusPublished - 2011 Dec 1
Event30th International Conference on the Physics of Semiconductors, ICPS-30 - Seoul, Korea, Republic of
Duration: 2010 Jul 252010 Jul 30

Publication series

NameAIP Conference Proceedings
Volume1399
ISSN (Print)0094-243X
ISSN (Electronic)1551-7616

Other

Other30th International Conference on the Physics of Semiconductors, ICPS-30
CountryKorea, Republic of
CitySeoul
Period10/7/2510/7/30

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

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  • Cite this

    Lee, J. S., Lee, H. J., & Lee, M. K. (2011). Laser-direct parallel patterning of metal thin films. In Physics of Semiconductors - 30th International Conference on the Physics of Semiconductors, ICPS-30 (pp. 919-920). (AIP Conference Proceedings; Vol. 1399). https://doi.org/10.1063/1.3666676