Laser-direct photoetching of metal thin film for the electrode of transistor

Hyeongjae Lee, Hyunkwon Shin, Youngmin Jeong, Jooho Moon, Myeongkyu Lee

Research output: Contribution to journalArticle

18 Citations (Scopus)

Abstract

We report that metal thin films can be directly photoetched by a pulsed neodymium doped yttrium aluminum garnet laser beam irradiating the film surface. This process utilizes a laser-induced thermoelastic force, which plays a role to detach the film from the underlying layer. High-fidelity patterns at the micrometer scales have been fabricated using a spatially modulated laser beam. A zinc-tin-oxide thin film transistor with photoetched Al source and drain electrodes exhibited an on/off ratio higher than 105 and a very low off-current level. This indicates that the metallic layer is completely etched out by this process, making an additional cleaning or etching step unnecessary.

Original languageEnglish
Article number071104
JournalApplied Physics Letters
Volume95
Issue number7
DOIs
Publication statusPublished - 2009

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Fingerprint Dive into the research topics of 'Laser-direct photoetching of metal thin film for the electrode of transistor'. Together they form a unique fingerprint.

  • Cite this