Laser-direct photoetching of metal thin film for the electrode of transistor

Hyeongjae Lee, Hyunkwon Shin, Youngmin Jeong, Jooho Moon, Myeongkyu Lee

Research output: Contribution to journalArticle

17 Citations (Scopus)

Abstract

We report that metal thin films can be directly photoetched by a pulsed neodymium doped yttrium aluminum garnet laser beam irradiating the film surface. This process utilizes a laser-induced thermoelastic force, which plays a role to detach the film from the underlying layer. High-fidelity patterns at the micrometer scales have been fabricated using a spatially modulated laser beam. A zinc-tin-oxide thin film transistor with photoetched Al source and drain electrodes exhibited an on/off ratio higher than 105 and a very low off-current level. This indicates that the metallic layer is completely etched out by this process, making an additional cleaning or etching step unnecessary.

Original languageEnglish
Article number071104
JournalApplied Physics Letters
Volume95
Issue number7
DOIs
Publication statusPublished - 2009 Sep 1

Fingerprint

transistors
laser beams
electrodes
neodymium
thin films
zinc oxides
metals
yttrium-aluminum garnet
cleaning
tin oxides
lasers
micrometers
etching

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

@article{ce34c7b0a0b44145852d725c4a88f75f,
title = "Laser-direct photoetching of metal thin film for the electrode of transistor",
abstract = "We report that metal thin films can be directly photoetched by a pulsed neodymium doped yttrium aluminum garnet laser beam irradiating the film surface. This process utilizes a laser-induced thermoelastic force, which plays a role to detach the film from the underlying layer. High-fidelity patterns at the micrometer scales have been fabricated using a spatially modulated laser beam. A zinc-tin-oxide thin film transistor with photoetched Al source and drain electrodes exhibited an on/off ratio higher than 105 and a very low off-current level. This indicates that the metallic layer is completely etched out by this process, making an additional cleaning or etching step unnecessary.",
author = "Hyeongjae Lee and Hyunkwon Shin and Youngmin Jeong and Jooho Moon and Myeongkyu Lee",
year = "2009",
month = "9",
day = "1",
doi = "10.1063/1.3207823",
language = "English",
volume = "95",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "7",

}

Laser-direct photoetching of metal thin film for the electrode of transistor. / Lee, Hyeongjae; Shin, Hyunkwon; Jeong, Youngmin; Moon, Jooho; Lee, Myeongkyu.

In: Applied Physics Letters, Vol. 95, No. 7, 071104, 01.09.2009.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Laser-direct photoetching of metal thin film for the electrode of transistor

AU - Lee, Hyeongjae

AU - Shin, Hyunkwon

AU - Jeong, Youngmin

AU - Moon, Jooho

AU - Lee, Myeongkyu

PY - 2009/9/1

Y1 - 2009/9/1

N2 - We report that metal thin films can be directly photoetched by a pulsed neodymium doped yttrium aluminum garnet laser beam irradiating the film surface. This process utilizes a laser-induced thermoelastic force, which plays a role to detach the film from the underlying layer. High-fidelity patterns at the micrometer scales have been fabricated using a spatially modulated laser beam. A zinc-tin-oxide thin film transistor with photoetched Al source and drain electrodes exhibited an on/off ratio higher than 105 and a very low off-current level. This indicates that the metallic layer is completely etched out by this process, making an additional cleaning or etching step unnecessary.

AB - We report that metal thin films can be directly photoetched by a pulsed neodymium doped yttrium aluminum garnet laser beam irradiating the film surface. This process utilizes a laser-induced thermoelastic force, which plays a role to detach the film from the underlying layer. High-fidelity patterns at the micrometer scales have been fabricated using a spatially modulated laser beam. A zinc-tin-oxide thin film transistor with photoetched Al source and drain electrodes exhibited an on/off ratio higher than 105 and a very low off-current level. This indicates that the metallic layer is completely etched out by this process, making an additional cleaning or etching step unnecessary.

UR - http://www.scopus.com/inward/record.url?scp=69249174172&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=69249174172&partnerID=8YFLogxK

U2 - 10.1063/1.3207823

DO - 10.1063/1.3207823

M3 - Article

AN - SCOPUS:69249174172

VL - 95

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 7

M1 - 071104

ER -