Abstract
We show that inverted-pyramid (IP) textures can be fabricated on mono-crystalline Si wafer by laser interference combined with alkali etching. When exposed to three interfering nanosecond-laser beams at 532 nm, the surface was periodically melted in accordance with the interference pattern, generating concave holes. Subsequent etching with a KOH solution revealed IP structures as a result of the anisotropic etching. It was found that not only the etching condition but also the in-plane orientation relationship of interfering beams is an important factor to fabricate low-reflectance, uniform IP textures. An average reflectance less than 20% was obtained over the spectral range of 400 nm to 1 μm. This mask-free process may be effectively utilized for the production of low-cost, high-efficiency crystalline Si solar cells.
| Original language | English |
|---|---|
| Pages (from-to) | 52-56 |
| Number of pages | 5 |
| Journal | Microelectronic Engineering |
| Volume | 130 |
| DOIs | |
| Publication status | Published - 2014 Nov 25 |
Bibliographical note
Funding Information:This work was supported by the New & Renewable Energy Program of the Korea Institute of Energy Technology Evaluation and Planning (KETEP) grant funded by the Korea government Ministry of Knowledge Economy (Grant: 20103020010080 ).
Publisher Copyright:
© 2014 Elsevier B.V. All rights reserved.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Condensed Matter Physics
- Surfaces, Coatings and Films
- Electrical and Electronic Engineering