Laser interference-driven fabrication of regular inverted-pyramid texture on mono-crystalline Si

Bogeum Yang, Myeongkyu Lee

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

We show that inverted-pyramid (IP) textures can be fabricated on mono-crystalline Si wafer by laser interference combined with alkali etching. When exposed to three interfering nanosecond-laser beams at 532 nm, the surface was periodically melted in accordance with the interference pattern, generating concave holes. Subsequent etching with a KOH solution revealed IP structures as a result of the anisotropic etching. It was found that not only the etching condition but also the in-plane orientation relationship of interfering beams is an important factor to fabricate low-reflectance, uniform IP textures. An average reflectance less than 20% was obtained over the spectral range of 400 nm to 1 μm. This mask-free process may be effectively utilized for the production of low-cost, high-efficiency crystalline Si solar cells.

Original languageEnglish
Pages (from-to)52-56
Number of pages5
JournalMicroelectronic Engineering
Volume130
DOIs
Publication statusPublished - 2014 Nov 25

Fingerprint

pyramids
Etching
textures
Textures
etching
Crystalline materials
interference
Fabrication
fabrication
Lasers
lasers
Anisotropic etching
Alkalies
reflectance
Laser beams
Masks
Solar cells
alkalies
masks
solar cells

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering

Cite this

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abstract = "We show that inverted-pyramid (IP) textures can be fabricated on mono-crystalline Si wafer by laser interference combined with alkali etching. When exposed to three interfering nanosecond-laser beams at 532 nm, the surface was periodically melted in accordance with the interference pattern, generating concave holes. Subsequent etching with a KOH solution revealed IP structures as a result of the anisotropic etching. It was found that not only the etching condition but also the in-plane orientation relationship of interfering beams is an important factor to fabricate low-reflectance, uniform IP textures. An average reflectance less than 20{\%} was obtained over the spectral range of 400 nm to 1 μm. This mask-free process may be effectively utilized for the production of low-cost, high-efficiency crystalline Si solar cells.",
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Laser interference-driven fabrication of regular inverted-pyramid texture on mono-crystalline Si. / Yang, Bogeum; Lee, Myeongkyu.

In: Microelectronic Engineering, Vol. 130, 25.11.2014, p. 52-56.

Research output: Contribution to journalArticle

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AB - We show that inverted-pyramid (IP) textures can be fabricated on mono-crystalline Si wafer by laser interference combined with alkali etching. When exposed to three interfering nanosecond-laser beams at 532 nm, the surface was periodically melted in accordance with the interference pattern, generating concave holes. Subsequent etching with a KOH solution revealed IP structures as a result of the anisotropic etching. It was found that not only the etching condition but also the in-plane orientation relationship of interfering beams is an important factor to fabricate low-reflectance, uniform IP textures. An average reflectance less than 20% was obtained over the spectral range of 400 nm to 1 μm. This mask-free process may be effectively utilized for the production of low-cost, high-efficiency crystalline Si solar cells.

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