Abstract
We show that inverted-pyramid (IP) textures can be fabricated on mono-crystalline Si wafer by laser interference combined with alkali etching. When exposed to three interfering nanosecond-laser beams at 532 nm, the surface was periodically melted in accordance with the interference pattern, generating concave holes. Subsequent etching with a KOH solution revealed IP structures as a result of the anisotropic etching. It was found that not only the etching condition but also the in-plane orientation relationship of interfering beams is an important factor to fabricate low-reflectance, uniform IP textures. An average reflectance less than 20% was obtained over the spectral range of 400 nm to 1 μm. This mask-free process may be effectively utilized for the production of low-cost, high-efficiency crystalline Si solar cells.
| Original language | English |
|---|---|
| Pages (from-to) | 52-56 |
| Number of pages | 5 |
| Journal | Microelectronic Engineering |
| Volume | 130 |
| DOIs | |
| Publication status | Published - 2014 Nov 25 |
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All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Condensed Matter Physics
- Surfaces, Coatings and Films
- Electrical and Electronic Engineering
Cite this
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Laser interference-driven fabrication of regular inverted-pyramid texture on mono-crystalline Si. / Yang, Bogeum; Lee, Myeongkyu.
In: Microelectronic Engineering, Vol. 130, 25.11.2014, p. 52-56.Research output: Contribution to journal › Article
TY - JOUR
T1 - Laser interference-driven fabrication of regular inverted-pyramid texture on mono-crystalline Si
AU - Yang, Bogeum
AU - Lee, Myeongkyu
PY - 2014/11/25
Y1 - 2014/11/25
N2 - We show that inverted-pyramid (IP) textures can be fabricated on mono-crystalline Si wafer by laser interference combined with alkali etching. When exposed to three interfering nanosecond-laser beams at 532 nm, the surface was periodically melted in accordance with the interference pattern, generating concave holes. Subsequent etching with a KOH solution revealed IP structures as a result of the anisotropic etching. It was found that not only the etching condition but also the in-plane orientation relationship of interfering beams is an important factor to fabricate low-reflectance, uniform IP textures. An average reflectance less than 20% was obtained over the spectral range of 400 nm to 1 μm. This mask-free process may be effectively utilized for the production of low-cost, high-efficiency crystalline Si solar cells.
AB - We show that inverted-pyramid (IP) textures can be fabricated on mono-crystalline Si wafer by laser interference combined with alkali etching. When exposed to three interfering nanosecond-laser beams at 532 nm, the surface was periodically melted in accordance with the interference pattern, generating concave holes. Subsequent etching with a KOH solution revealed IP structures as a result of the anisotropic etching. It was found that not only the etching condition but also the in-plane orientation relationship of interfering beams is an important factor to fabricate low-reflectance, uniform IP textures. An average reflectance less than 20% was obtained over the spectral range of 400 nm to 1 μm. This mask-free process may be effectively utilized for the production of low-cost, high-efficiency crystalline Si solar cells.
UR - http://www.scopus.com/inward/record.url?scp=84911949532&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84911949532&partnerID=8YFLogxK
U2 - 10.1016/j.mee.2014.09.016
DO - 10.1016/j.mee.2014.09.016
M3 - Article
AN - SCOPUS:84911949532
VL - 130
SP - 52
EP - 56
JO - Microelectronic Engineering
JF - Microelectronic Engineering
SN - 0167-9317
ER -