We successfully fabricated GIZO (Ga2O3-In 2O3-ZnO) TFTs with high mobility of 2.6 cm2/Vs and threshold voltage standard deviation of 0.7V which is comparable to that of a-Si TFTs. Because conventional 5 mask process and bottom gate TFT structure of back channel etch type with channel length of 5 μn is used, it is expected to be transferred to mass production line in near future. Also we report the dependency of threshold voltage on the post process after the back surface of GIZO is exposed and suggest the effective method for controlling the threshold voltage of amorphous GIZO TFTs. Finally we demonstrate 4 inch QVGA AMOLED display driven by GIZO TFTs.
|Number of pages||4|
|Journal||Digest of Technical Papers - SID International Symposium|
|Publication status||Published - 2008|
|Event||2008 SID International Symposium - Los Angeles, CA, United States|
Duration: 2008 May 20 → 2008 May 21
All Science Journal Classification (ASJC) codes