Late-news paper:4 inch QVGA AMOLED driven by the threshold voltage controlled amorphous GIZO (Ga2O3-In2O 3-ZnO) TFT

Kyoung Seok Son, Tae Sang Kim, Ji Sim Jung, Myung Kwan Ryu, Kyung Bae Park, Byung Wook Yoo, Jung Woo Kim, Young Gu Lee, Jang Yeon Kwon, Sang Yoon Lee, Jong Min Kim

Research output: Contribution to journalConference article

28 Citations (Scopus)

Abstract

We successfully fabricated GIZO (Ga2O3-In 2O3-ZnO) TFTs with high mobility of 2.6 cm2/Vs and threshold voltage standard deviation of 0.7V which is comparable to that of a-Si TFTs. Because conventional 5 mask process and bottom gate TFT structure of back channel etch type with channel length of 5 μn is used, it is expected to be transferred to mass production line in near future. Also we report the dependency of threshold voltage on the post process after the back surface of GIZO is exposed and suggest the effective method for controlling the threshold voltage of amorphous GIZO TFTs. Finally we demonstrate 4 inch QVGA AMOLED display driven by GIZO TFTs.

Original languageEnglish
Pages (from-to)633-636
Number of pages4
JournalDigest of Technical Papers - SID International Symposium
Volume39
Issue number2
DOIs
Publication statusPublished - 2008
Event2008 SID International Symposium - Los Angeles, CA, United States
Duration: 2008 May 202008 May 21

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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    Son, K. S., Kim, T. S., Jung, J. S., Ryu, M. K., Park, K. B., Yoo, B. W., Kim, J. W., Lee, Y. G., Kwon, J. Y., Lee, S. Y., & Kim, J. M. (2008). Late-news paper:4 inch QVGA AMOLED driven by the threshold voltage controlled amorphous GIZO (Ga2O3-In2O 3-ZnO) TFT. Digest of Technical Papers - SID International Symposium, 39(2), 633-636. https://doi.org/10.1889/1.3069743