Late-news poster: Improvements in the device performance of amorphous indium gallium zinc oxide thin film transistors by xecl excimer laser irradiation

Sung Hwan Choi; Min Koo Han; Byung Du Ahn; Hyun Soo Shin; Woong Hee Jeong; Gun Hee Kim; Hyun Jae Kim

doi:10.1889/1.3256496

Late-news poster: Improvements in the device performance of amorphous indium gallium zinc oxide thin film transistors by xecl excimer laser irradiation

Sung Hwan Choi, Min Koo Han, Byung Du Ahn, Hyun Soo Shin, Woong Hee Jeong, Gun Hee Kim, Hyun Jae Kim

Department of Electrical and Electronic Engineering

Research output: Contribution to journal › Conference article › peer-review

Abstract

The effect of XeCl excimer laser irradiation on amorphous indium gallium zinc oxide (a-IGZO) thin films was investigated. The resistivity of the a-IGZO thin films dramatically decreased upon their exposure to the XeCl excimer laser compared to that of the as-deposited thin film from 10⁴ to 10^–3 Ωcm. The source/drain regions were selectively laser irradiated in the a-IGZO channel layer using metal mask for reducing a contact resistance. Our TFT had a field-effect mobility of 21.79 cm²/Vs, an on/off ratio of 6.0 × 10⁷, a threshold voltage of-0.15 V, and a subthreshold swing of 0.26 V/decade.

Original language	English
Pages (from-to)	1170-1172
Number of pages	3
Journal	Digest of Technical Papers - SID International Symposium
Volume	40
Issue number	1
DOIs	https://doi.org/10.1889/1.3256496
Publication status	Published - 2009
Event	2009 Vehicles and Photons Symposium - Dearborn, MI, United States Duration: 2009 Oct 15 → 2009 Oct 16

Bibliographical note

Publisher Copyright:
� 2009 SID.

All Science Journal Classification (ASJC) codes

Engineering(all)

Access to Document

10.1889/1.3256496

Cite this

@article{760597f9c2214ffc80b13347352396a2,

title = "Late-news poster: Improvements in the device performance of amorphous indium gallium zinc oxide thin film transistors by xecl excimer laser irradiation",

abstract = "The effect of XeCl excimer laser irradiation on amorphous indium gallium zinc oxide (a-IGZO) thin films was investigated. The resistivity of the a-IGZO thin films dramatically decreased upon their exposure to the XeCl excimer laser compared to that of the as-deposited thin film from 104 to 10–3 Ωcm. The source/drain regions were selectively laser irradiated in the a-IGZO channel layer using metal mask for reducing a contact resistance. Our TFT had a field-effect mobility of 21.79 cm2/Vs, an on/off ratio of 6.0 × 107, a threshold voltage of-0.15 V, and a subthreshold swing of 0.26 V/decade.",

author = "Choi, {Sung Hwan} and Han, {Min Koo} and Ahn, {Byung Du} and Shin, {Hyun Soo} and Jeong, {Woong Hee} and Kim, {Gun Hee} and Kim, {Hyun Jae}",

note = "Publisher Copyright: � 2009 SID.; 2009 Vehicles and Photons Symposium ; Conference date: 15-10-2009 Through 16-10-2009",

year = "2009",

doi = "10.1889/1.3256496",

language = "English",

volume = "40",

pages = "1170--1172",

journal = "Digest of Technical Papers - SID International Symposium",

issn = "0097-966X",

number = "1",

}

Late-news poster : Improvements in the device performance of amorphous indium gallium zinc oxide thin film transistors by xecl excimer laser irradiation. / Choi, Sung Hwan; Han, Min Koo; Ahn, Byung Du et al.

In: Digest of Technical Papers - SID International Symposium, Vol. 40, No. 1, 2009, p. 1170-1172.

Research output: Contribution to journal › Conference article › peer-review

TY - JOUR

T1 - Late-news poster

T2 - 2009 Vehicles and Photons Symposium

AU - Choi, Sung Hwan

AU - Han, Min Koo

AU - Ahn, Byung Du

AU - Shin, Hyun Soo

AU - Jeong, Woong Hee

AU - Kim, Gun Hee

AU - Kim, Hyun Jae

PY - 2009

Y1 - 2009

N2 - The effect of XeCl excimer laser irradiation on amorphous indium gallium zinc oxide (a-IGZO) thin films was investigated. The resistivity of the a-IGZO thin films dramatically decreased upon their exposure to the XeCl excimer laser compared to that of the as-deposited thin film from 104 to 10–3 Ωcm. The source/drain regions were selectively laser irradiated in the a-IGZO channel layer using metal mask for reducing a contact resistance. Our TFT had a field-effect mobility of 21.79 cm2/Vs, an on/off ratio of 6.0 × 107, a threshold voltage of-0.15 V, and a subthreshold swing of 0.26 V/decade.

AB - The effect of XeCl excimer laser irradiation on amorphous indium gallium zinc oxide (a-IGZO) thin films was investigated. The resistivity of the a-IGZO thin films dramatically decreased upon their exposure to the XeCl excimer laser compared to that of the as-deposited thin film from 104 to 10–3 Ωcm. The source/drain regions were selectively laser irradiated in the a-IGZO channel layer using metal mask for reducing a contact resistance. Our TFT had a field-effect mobility of 21.79 cm2/Vs, an on/off ratio of 6.0 × 107, a threshold voltage of-0.15 V, and a subthreshold swing of 0.26 V/decade.

UR - http://www.scopus.com/inward/record.url?scp=85072723788&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85072723788&partnerID=8YFLogxK

U2 - 10.1889/1.3256496

DO - 10.1889/1.3256496

M3 - Conference article

AN - SCOPUS:85072723788

SN - 0097-966X

VL - 40

SP - 1170

EP - 1172

JO - Digest of Technical Papers - SID International Symposium

JF - Digest of Technical Papers - SID International Symposium

IS - 1

Y2 - 15 October 2009 through 16 October 2009

ER -

Late-news poster: Improvements in the device performance of amorphous indium gallium zinc oxide thin film transistors by xecl excimer laser irradiation

Abstract

Bibliographical note

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this