Late-news poster: Improvements in the device performance of amorphous indium gallium zinc oxide thin film transistors by xecl excimer laser irradiation

Sung Hwan Choi, Min Koo Han, Byung Du Ahn, Hyun Soo Shin, Woong Hee Jeong, Gun Hee Kim, Hyun Jae Kim

Research output: Contribution to journalConference article

Abstract

The effect of XeCl excimer laser irradiation on amorphous indium gallium zinc oxide (a-IGZO) thin films was investigated. The resistivity of the a-IGZO thin films dramatically decreased upon their exposure to the XeCl excimer laser compared to that of the as-deposited thin film from 104 to 10–3 Ωcm. The source/drain regions were selectively laser irradiated in the a-IGZO channel layer using metal mask for reducing a contact resistance. Our TFT had a field-effect mobility of 21.79 cm2/Vs, an on/off ratio of 6.0 × 107, a threshold voltage of-0.15 V, and a subthreshold swing of 0.26 V/decade.

Original languageEnglish
Pages (from-to)1170-1172
Number of pages3
JournalDigest of Technical Papers - SID International Symposium
Volume40
Issue number1
DOIs
Publication statusPublished - 2009 Jan 1
Event2009 Vehicles and Photons Symposium - Dearborn, MI, United States
Duration: 2009 Oct 152009 Oct 16

Fingerprint

Excimer lasers
Gallium
Laser beam effects
Thin film transistors
Zinc oxide
Indium
Oxide films
Thin films
Contact resistance
Threshold voltage
Masks
Lasers
Metals

All Science Journal Classification (ASJC) codes

  • Engineering(all)

Cite this

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title = "Late-news poster: Improvements in the device performance of amorphous indium gallium zinc oxide thin film transistors by xecl excimer laser irradiation",
abstract = "The effect of XeCl excimer laser irradiation on amorphous indium gallium zinc oxide (a-IGZO) thin films was investigated. The resistivity of the a-IGZO thin films dramatically decreased upon their exposure to the XeCl excimer laser compared to that of the as-deposited thin film from 104 to 10–3 Ωcm. The source/drain regions were selectively laser irradiated in the a-IGZO channel layer using metal mask for reducing a contact resistance. Our TFT had a field-effect mobility of 21.79 cm2/Vs, an on/off ratio of 6.0 × 107, a threshold voltage of-0.15 V, and a subthreshold swing of 0.26 V/decade.",
author = "Choi, {Sung Hwan} and Han, {Min Koo} and Ahn, {Byung Du} and Shin, {Hyun Soo} and Jeong, {Woong Hee} and Kim, {Gun Hee} and Kim, {Hyun Jae}",
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Late-news poster : Improvements in the device performance of amorphous indium gallium zinc oxide thin film transistors by xecl excimer laser irradiation. / Choi, Sung Hwan; Han, Min Koo; Ahn, Byung Du; Shin, Hyun Soo; Jeong, Woong Hee; Kim, Gun Hee; Kim, Hyun Jae.

In: Digest of Technical Papers - SID International Symposium, Vol. 40, No. 1, 01.01.2009, p. 1170-1172.

Research output: Contribution to journalConference article

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