The effect of XeCl excimer laser irradiation on amorphous indium gallium zinc oxide (a-IGZO) thin films was investigated. The resistivity of the a-IGZO thin films dramatically decreased upon their exposure to the XeCl excimer laser compared to that of the as-deposited thin film from 104 to 10–3 Ωcm. The source/drain regions were selectively laser irradiated in the a-IGZO channel layer using metal mask for reducing a contact resistance. Our TFT had a field-effect mobility of 21.79 cm2/Vs, an on/off ratio of 6.0 × 107, a threshold voltage of-0.15 V, and a subthreshold swing of 0.26 V/decade.
|Number of pages||3|
|Journal||Digest of Technical Papers - SID International Symposium|
|Publication status||Published - 2009|
|Event||2009 Vehicles and Photons Symposium - Dearborn, MI, United States|
Duration: 2009 Oct 15 → 2009 Oct 16
Bibliographical notePublisher Copyright:
� 2009 SID.
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