Layer dependence and gas molecule absorption property in MoS 2 Schottky diode with asymmetric metal contacts

Hyong Seo Yoon, Hang Eun Joe, Sun Jun Kim, Hee Sung Lee, Seongil Im, Byung-Kwon Min, Seong Chan Jun

Research output: Contribution to journalArticle

28 Citations (Scopus)

Abstract

Surface potential measurement on atomically thin MoS 2 flakes revealed the thickness dependence in Schottky barriers formed between high work function metal electrodes and MoS 2 thin flakes. Schottky diode devices using mono-and multi-layer MoS 2 channels were demonstrated by employing Ti and Pt contacts to form ohmic and Schottky junctions respectively. Characterization results indicated n-type behavior of the MoS 2 thin flakes and the devices showed clear rectifying performance. We also observed the layer dependence in device characteristics and asymmetrically enhanced responses to NH3 and NO 2 gases based on the metal work function and the Schottky barrier height change.

Original languageEnglish
Article number10440
JournalScientific reports
Volume5
DOIs
Publication statusPublished - 2015 May 20

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flakes
Schottky diodes
electric contacts
gases
metals
molecules
electrodes

All Science Journal Classification (ASJC) codes

  • General

Cite this

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title = "Layer dependence and gas molecule absorption property in MoS 2 Schottky diode with asymmetric metal contacts",
abstract = "Surface potential measurement on atomically thin MoS 2 flakes revealed the thickness dependence in Schottky barriers formed between high work function metal electrodes and MoS 2 thin flakes. Schottky diode devices using mono-and multi-layer MoS 2 channels were demonstrated by employing Ti and Pt contacts to form ohmic and Schottky junctions respectively. Characterization results indicated n-type behavior of the MoS 2 thin flakes and the devices showed clear rectifying performance. We also observed the layer dependence in device characteristics and asymmetrically enhanced responses to NH3 and NO 2 gases based on the metal work function and the Schottky barrier height change.",
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Layer dependence and gas molecule absorption property in MoS 2 Schottky diode with asymmetric metal contacts. / Yoon, Hyong Seo; Joe, Hang Eun; Jun Kim, Sun; Lee, Hee Sung; Im, Seongil; Min, Byung-Kwon; Jun, Seong Chan.

In: Scientific reports, Vol. 5, 10440, 20.05.2015.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Layer dependence and gas molecule absorption property in MoS 2 Schottky diode with asymmetric metal contacts

AU - Yoon, Hyong Seo

AU - Joe, Hang Eun

AU - Jun Kim, Sun

AU - Lee, Hee Sung

AU - Im, Seongil

AU - Min, Byung-Kwon

AU - Jun, Seong Chan

PY - 2015/5/20

Y1 - 2015/5/20

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AB - Surface potential measurement on atomically thin MoS 2 flakes revealed the thickness dependence in Schottky barriers formed between high work function metal electrodes and MoS 2 thin flakes. Schottky diode devices using mono-and multi-layer MoS 2 channels were demonstrated by employing Ti and Pt contacts to form ohmic and Schottky junctions respectively. Characterization results indicated n-type behavior of the MoS 2 thin flakes and the devices showed clear rectifying performance. We also observed the layer dependence in device characteristics and asymmetrically enhanced responses to NH3 and NO 2 gases based on the metal work function and the Schottky barrier height change.

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