Surface potential measurement on atomically thin MoS 2 flakes revealed the thickness dependence in Schottky barriers formed between high work function metal electrodes and MoS 2 thin flakes. Schottky diode devices using mono-and multi-layer MoS 2 channels were demonstrated by employing Ti and Pt contacts to form ohmic and Schottky junctions respectively. Characterization results indicated n-type behavior of the MoS 2 thin flakes and the devices showed clear rectifying performance. We also observed the layer dependence in device characteristics and asymmetrically enhanced responses to NH3 and NO 2 gases based on the metal work function and the Schottky barrier height change.
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