Layered Post-Transition-Metal Dichalcogenides (X−M−M−X) and Their Properties

Jan Luxa, Yong Wang, Zdenek Sofer, Martin Pumera

Research output: Contribution to journalArticle

12 Citations (Scopus)

Abstract

AIIIBVIchalcogenides are an interesting group of layered semiconductors with several attractive properties, such as tunable band gaps and the formation of solid solutions. Unlike the typically sandwiched structure of transition-metal dichalcogenides, AIIIBVIlayered chalcogenides with hexagonal symmetry are stacked through the X−M−M−X motif, in which M is gallium and indium, and X is sulfur, selenium, and tellurium. In view of the inadequate study of the electrochemical properties and great interest in layered materials towards energy-related research, herein the inherent electrochemistry of GaS, GaSe, GaTe, and InSe has been studied, as well as the exploration of their potential as hydrogen evolution reaction (HER) electrocatalysts. All four materials show redox peaks during cyclic voltammetry measurements. Furthermore, insights into catalysis of the HER are provided; these indicate the conductivity and number of active sites of the materials. All of these findings have important implications on their possible applications.

Original languageEnglish
Pages (from-to)18810-18816
Number of pages7
JournalChemistry - A European Journal
Volume22
Issue number52
DOIs
Publication statusPublished - 2016 Jan 1

Fingerprint

Transition metals
Hydrogen
Tellurium
Chalcogenides
Gallium
Indium
Electrocatalysts
Selenium
Electrochemistry
Electrochemical properties
Sulfur
Catalysis
Cyclic voltammetry
Solid solutions
Energy gap
Layered semiconductors
Oxidation-Reduction
gallium selenide

All Science Journal Classification (ASJC) codes

  • Catalysis
  • Chemistry(all)
  • Organic Chemistry

Cite this

Luxa, Jan ; Wang, Yong ; Sofer, Zdenek ; Pumera, Martin. / Layered Post-Transition-Metal Dichalcogenides (X−M−M−X) and Their Properties. In: Chemistry - A European Journal. 2016 ; Vol. 22, No. 52. pp. 18810-18816.
@article{b2375c23d66a4e9a94b25def1cf57030,
title = "Layered Post-Transition-Metal Dichalcogenides (X−M−M−X) and Their Properties",
abstract = "AIIIBVIchalcogenides are an interesting group of layered semiconductors with several attractive properties, such as tunable band gaps and the formation of solid solutions. Unlike the typically sandwiched structure of transition-metal dichalcogenides, AIIIBVIlayered chalcogenides with hexagonal symmetry are stacked through the X−M−M−X motif, in which M is gallium and indium, and X is sulfur, selenium, and tellurium. In view of the inadequate study of the electrochemical properties and great interest in layered materials towards energy-related research, herein the inherent electrochemistry of GaS, GaSe, GaTe, and InSe has been studied, as well as the exploration of their potential as hydrogen evolution reaction (HER) electrocatalysts. All four materials show redox peaks during cyclic voltammetry measurements. Furthermore, insights into catalysis of the HER are provided; these indicate the conductivity and number of active sites of the materials. All of these findings have important implications on their possible applications.",
author = "Jan Luxa and Yong Wang and Zdenek Sofer and Martin Pumera",
year = "2016",
month = "1",
day = "1",
doi = "10.1002/chem.201604168",
language = "English",
volume = "22",
pages = "18810--18816",
journal = "Chemistry - A European Journal",
issn = "0947-6539",
publisher = "Wiley-VCH Verlag",
number = "52",

}

Layered Post-Transition-Metal Dichalcogenides (X−M−M−X) and Their Properties. / Luxa, Jan; Wang, Yong; Sofer, Zdenek; Pumera, Martin.

In: Chemistry - A European Journal, Vol. 22, No. 52, 01.01.2016, p. 18810-18816.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Layered Post-Transition-Metal Dichalcogenides (X−M−M−X) and Their Properties

AU - Luxa, Jan

AU - Wang, Yong

AU - Sofer, Zdenek

AU - Pumera, Martin

PY - 2016/1/1

Y1 - 2016/1/1

N2 - AIIIBVIchalcogenides are an interesting group of layered semiconductors with several attractive properties, such as tunable band gaps and the formation of solid solutions. Unlike the typically sandwiched structure of transition-metal dichalcogenides, AIIIBVIlayered chalcogenides with hexagonal symmetry are stacked through the X−M−M−X motif, in which M is gallium and indium, and X is sulfur, selenium, and tellurium. In view of the inadequate study of the electrochemical properties and great interest in layered materials towards energy-related research, herein the inherent electrochemistry of GaS, GaSe, GaTe, and InSe has been studied, as well as the exploration of their potential as hydrogen evolution reaction (HER) electrocatalysts. All four materials show redox peaks during cyclic voltammetry measurements. Furthermore, insights into catalysis of the HER are provided; these indicate the conductivity and number of active sites of the materials. All of these findings have important implications on their possible applications.

AB - AIIIBVIchalcogenides are an interesting group of layered semiconductors with several attractive properties, such as tunable band gaps and the formation of solid solutions. Unlike the typically sandwiched structure of transition-metal dichalcogenides, AIIIBVIlayered chalcogenides with hexagonal symmetry are stacked through the X−M−M−X motif, in which M is gallium and indium, and X is sulfur, selenium, and tellurium. In view of the inadequate study of the electrochemical properties and great interest in layered materials towards energy-related research, herein the inherent electrochemistry of GaS, GaSe, GaTe, and InSe has been studied, as well as the exploration of their potential as hydrogen evolution reaction (HER) electrocatalysts. All four materials show redox peaks during cyclic voltammetry measurements. Furthermore, insights into catalysis of the HER are provided; these indicate the conductivity and number of active sites of the materials. All of these findings have important implications on their possible applications.

UR - http://www.scopus.com/inward/record.url?scp=85004143358&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85004143358&partnerID=8YFLogxK

U2 - 10.1002/chem.201604168

DO - 10.1002/chem.201604168

M3 - Article

AN - SCOPUS:85004143358

VL - 22

SP - 18810

EP - 18816

JO - Chemistry - A European Journal

JF - Chemistry - A European Journal

SN - 0947-6539

IS - 52

ER -