Layered Post-Transition-Metal Dichalcogenides (X−M−M−X) and Their Properties

Jan Luxa, Yong Wang, Zdenek Sofer, Martin Pumera

Research output: Contribution to journalArticle

13 Citations (Scopus)

Abstract

AIIIBVIchalcogenides are an interesting group of layered semiconductors with several attractive properties, such as tunable band gaps and the formation of solid solutions. Unlike the typically sandwiched structure of transition-metal dichalcogenides, AIIIBVIlayered chalcogenides with hexagonal symmetry are stacked through the X−M−M−X motif, in which M is gallium and indium, and X is sulfur, selenium, and tellurium. In view of the inadequate study of the electrochemical properties and great interest in layered materials towards energy-related research, herein the inherent electrochemistry of GaS, GaSe, GaTe, and InSe has been studied, as well as the exploration of their potential as hydrogen evolution reaction (HER) electrocatalysts. All four materials show redox peaks during cyclic voltammetry measurements. Furthermore, insights into catalysis of the HER are provided; these indicate the conductivity and number of active sites of the materials. All of these findings have important implications on their possible applications.

Original languageEnglish
Pages (from-to)18810-18816
Number of pages7
JournalChemistry - A European Journal
Volume22
Issue number52
DOIs
Publication statusPublished - 2016 Jan 1

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All Science Journal Classification (ASJC) codes

  • Catalysis
  • Organic Chemistry

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