Level degeneracy and temperature-dependent carrier distributions in self-organized quantum dots

Kyoungsik Kim, T. B. Norris, S. Ghosh, J. Singh, P. Bhattacharya

Research output: Contribution to journalArticle

22 Citations (Scopus)

Abstract

A study was performed on level degeneracy and temperature-dependent carrier distributions in self-organized In0.4Ga0.6As quantum dots. The femtosecond three-pulse pump-probe spectroscopy was used to investigate the transparency conditions. It was found that the temperature-dependent behavior of the transparency condition was consistent with calculations using a multilevel model with a large density of states in the quantum-well reservoir.

Original languageEnglish
Pages (from-to)1959-1961
Number of pages3
JournalApplied Physics Letters
Volume82
Issue number12
DOIs
Publication statusPublished - 2003 Mar 24

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quantum dots
quantum wells
pumps
temperature
probes
pulses
spectroscopy

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

Kim, Kyoungsik ; Norris, T. B. ; Ghosh, S. ; Singh, J. ; Bhattacharya, P. / Level degeneracy and temperature-dependent carrier distributions in self-organized quantum dots. In: Applied Physics Letters. 2003 ; Vol. 82, No. 12. pp. 1959-1961.
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Level degeneracy and temperature-dependent carrier distributions in self-organized quantum dots. / Kim, Kyoungsik; Norris, T. B.; Ghosh, S.; Singh, J.; Bhattacharya, P.

In: Applied Physics Letters, Vol. 82, No. 12, 24.03.2003, p. 1959-1961.

Research output: Contribution to journalArticle

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