Light effects of the amorphous indium gallium zinc oxide thin-film transistor

Keun Woo Lee, Hyun Soo Shin, Kon Yi Heo, Kyung Min Kim, Hyun Jae Kim

Research output: Contribution to journalArticle

22 Citations (Scopus)

Abstract

The optical and electrical properties of the amorphous indium gallium zinc oxide thin-film transistor (a-IGZO TFT) were studied. When the a-IGZO TFT was illuminated at a wavelength of 660 nm, the off-state drain current slightly increased, while below 550 nm it increased significantly. The a-IGZO TFT was found to be extremely sensitive, with deep-level defects at approximately 2.25 eV near the midgap. After UV light illumination, a slight change occurred on the surface of the a-IGZO films, such as in terms of the oxygen 1s spectra, resistivity, and carrier concentrations. It is believed that these results will provide information regarding the photo-induced behaviors in the a-IGZO films.

Original languageEnglish
Pages (from-to)171-174
Number of pages4
JournalJournal of Information Display
Volume10
Issue number4
DOIs
Publication statusPublished - 2009 Jan 1

Fingerprint

Zinc Oxide
Gallium
Indium
Thin film transistors
Zinc oxide
Oxide films
Drain current
Ultraviolet radiation
Carrier concentration
Electric properties
Optical properties
Lighting
Oxygen
Wavelength
Defects

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Electrical and Electronic Engineering

Cite this

Lee, Keun Woo ; Shin, Hyun Soo ; Heo, Kon Yi ; Kim, Kyung Min ; Kim, Hyun Jae. / Light effects of the amorphous indium gallium zinc oxide thin-film transistor. In: Journal of Information Display. 2009 ; Vol. 10, No. 4. pp. 171-174.
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Light effects of the amorphous indium gallium zinc oxide thin-film transistor. / Lee, Keun Woo; Shin, Hyun Soo; Heo, Kon Yi; Kim, Kyung Min; Kim, Hyun Jae.

In: Journal of Information Display, Vol. 10, No. 4, 01.01.2009, p. 171-174.

Research output: Contribution to journalArticle

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