TY - JOUR
T1 - Light effects of the amorphous indium gallium zinc oxide thin-film transistor
AU - Lee, Keun Woo
AU - Shin, Hyun Soo
AU - Heo, Kon Yi
AU - Kim, Kyung Min
AU - Kim, Hyun Jae
PY - 2009
Y1 - 2009
N2 - The optical and electrical properties of the amorphous indium gallium zinc oxide thin-film transistor (a-IGZO TFT) were studied. When the a-IGZO TFT was illuminated at a wavelength of 660 nm, the off-state drain current slightly increased, while below 550 nm it increased significantly. The a-IGZO TFT was found to be extremely sensitive, with deep-level defects at approximately 2.25 eV near the midgap. After UV light illumination, a slight change occurred on the surface of the a-IGZO films, such as in terms of the oxygen 1s spectra, resistivity, and carrier concentrations. It is believed that these results will provide information regarding the photo-induced behaviors in the a-IGZO films.
AB - The optical and electrical properties of the amorphous indium gallium zinc oxide thin-film transistor (a-IGZO TFT) were studied. When the a-IGZO TFT was illuminated at a wavelength of 660 nm, the off-state drain current slightly increased, while below 550 nm it increased significantly. The a-IGZO TFT was found to be extremely sensitive, with deep-level defects at approximately 2.25 eV near the midgap. After UV light illumination, a slight change occurred on the surface of the a-IGZO films, such as in terms of the oxygen 1s spectra, resistivity, and carrier concentrations. It is believed that these results will provide information regarding the photo-induced behaviors in the a-IGZO films.
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U2 - 10.1080/15980316.2009.9652102
DO - 10.1080/15980316.2009.9652102
M3 - Article
AN - SCOPUS:84991987872
SN - 1598-0316
VL - 10
SP - 171
EP - 174
JO - Journal of Information Display
JF - Journal of Information Display
IS - 4
ER -