Photoluminescence (PL) from a Si-ion-irradiated SiO2/Si/SiO2 layer on a Si substrate at room temperature has been studied to elucidate the luminescence behavior under various post-annealing treatments. A luminescence band around 450 nm is observed from the as-irradiated sample. This luminescence band is found to originate from the diamagnetic defect, known as the B2 band, generated by Si ion irradiation. The intensity of this band increases with the increasing annealing temperature up to a critical temperature after Si irradiation. The B2 band activates at a lower temperature than the radiative defect related to the PL peak around 600 nm. After the ion-irradiated samples are annealed at 1100 °C, the PL peaks around 450 nm and 600 nm originating from radiative defects disappear, and a new PL peak appears around 720 nm. This luminescence band is associated with the ∼5-nm-sized Si nanocrystals produced along the Si layer between SiO2 layers, as determined by high resolution transmission electron microscopy. The intensity of the PL peak from the ion-irradiated SiO2/Si/SiO2 layer is stronger than that from the Si-implanted SiO2 film and that from the SiO2/Si/SiO2 layer annealed without Si irradiation.
|Number of pages||5|
|Journal||Journal of the Korean Physical Society|
|Publication status||Published - 2000 Oct 1|
All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)