Light-induced capacitance enhancement and successive carrier escape in InGaN/GaN multiple quantum wells

Physics

• Accumulations 50%
• Capacitance 100%
• Electric Potential 33%
• Light 16%
• Multiple Quantum Well 33%
• Photoelectric Emission 16%
• Quantum Wells 50%
• Spectra 16%
• Temperature 16%

Engineering

• Capacitance 100%
• Charge Separation 16%
• Electric Potential 33%
• Enhancement 33%
• Forward Bias 16%
• Laser Illumination 16%
• Nanometre 16%
• Photocurrent 16%
• Temperature 16%
• Wells 16%

Chemistry

• Charge Separation 16%
• Device 16%
• Photocurrent 16%
• Procedure 16%
• Reaction Temperature 16%
• Spectra 16%
• Voltage 33%