Light-induced hysteresis of In-Ga-Zn-O thin-film transistors with various temperatures

Seung Hee Kuk, Soo Yeon Lee, Sun Jae Kim, Binn Kim, Soo Jeong Park, Jang Yeon Kwon, Min Koo Han

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9 Citations (Scopus)


We investigated the hysteresis phenomenon in In-Ga-Zn-O thin-film transistors under light illumination. Hysteresis was observed under the 450-nm illumination and was increased with temperature. Light-induced hysteresis occurs due to increased subband-gap states at the interface between the gate-insulator layer and the active layer. Increased subband-gap states increase the subthreshold slope (SS) during the forward sweep. As temperature increases, the transition rate from neutral oxygen vacancy V O to doubly ionized oxygen vacancy V O 2+ increases under the same illumination conditions. The SS of the forward sweep increases with temperature due to the increase in V O 2+ states.

Original languageEnglish
Article number6261524
Pages (from-to)1279-1281
Number of pages3
JournalIEEE Electron Device Letters
Issue number9
Publication statusPublished - 2012 Aug 15


All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

Kuk, S. H., Lee, S. Y., Kim, S. J., Kim, B., Park, S. J., Kwon, J. Y., & Han, M. K. (2012). Light-induced hysteresis of In-Ga-Zn-O thin-film transistors with various temperatures. IEEE Electron Device Letters, 33(9), 1279-1281. [6261524].