Liquid crystal aligning capabilities in solution-processed HfZrO layers created via ion-beam irradiation

Seon Yeong Kim; Hong Gyu Park; Min Jae Cho; Hae Chang Jeong; Dai Hyun Kim; Dae Shik Seo

doi:10.1149/2.0111411jss

Liquid crystal aligning capabilities in solution-processed HfZrO layers created via ion-beam irradiation

Seon Yeong Kim, Hong Gyu Park, Min Jae Cho, Hae Chang Jeong, Dai Hyun Kim, Dae Shik Seo

Department of Electrical and Electronic Engineering

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

Liquid crystal (LC) alignment on various HfZrO films as a function of Hf concentration was studied. In the HfZrO system, Hf can act as a supporter to produce a uniform alignment layer. From pre-tilt measurement, LC cells with 5% and 10% Hf were optimized to perform as a device. By X-ray photoelectron spectroscopy (XPS) analysis, the proper amount of Hf addition in the ZrO system resulted in less oxygen vacancies which caused the LCs to be orientated more uniformly. However, too much Hf led to degradation of the LC cells due to the formation of HfO2 in the HfZrO films.

Original language	English
Pages (from-to)	R212-R215
Journal	ECS Journal of Solid State Science and Technology
Volume	3
Issue number	11
DOIs	https://doi.org/10.1149/2.0111411jss
Publication status	Published - 2014

Bibliographical note

Publisher Copyright:
© 2014 The Electrochemical Society.

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials

Access to Document

10.1149/2.0111411jss

Cite this

@article{945a0123982640afb168cfd2d4d80142,

title = "Liquid crystal aligning capabilities in solution-processed HfZrO layers created via ion-beam irradiation",

abstract = "Liquid crystal (LC) alignment on various HfZrO films as a function of Hf concentration was studied. In the HfZrO system, Hf can act as a supporter to produce a uniform alignment layer. From pre-tilt measurement, LC cells with 5% and 10% Hf were optimized to perform as a device. By X-ray photoelectron spectroscopy (XPS) analysis, the proper amount of Hf addition in the ZrO system resulted in less oxygen vacancies which caused the LCs to be orientated more uniformly. However, too much Hf led to degradation of the LC cells due to the formation of HfO2 in the HfZrO films.",

author = "Kim, {Seon Yeong} and Park, {Hong Gyu} and Cho, {Min Jae} and Jeong, {Hae Chang} and Kim, {Dai Hyun} and Seo, {Dae Shik}",

note = "Publisher Copyright: {\textcopyright} 2014 The Electrochemical Society.",

year = "2014",

doi = "10.1149/2.0111411jss",

language = "English",

volume = "3",

pages = "R212--R215",

journal = "ECS Journal of Solid State Science and Technology",

issn = "2162-8769",

publisher = "Electrochemical Society, Inc.",

number = "11",

}

TY - JOUR

T1 - Liquid crystal aligning capabilities in solution-processed HfZrO layers created via ion-beam irradiation

AU - Kim, Seon Yeong

AU - Park, Hong Gyu

AU - Cho, Min Jae

AU - Jeong, Hae Chang

AU - Kim, Dai Hyun

AU - Seo, Dae Shik

PY - 2014

Y1 - 2014

N2 - Liquid crystal (LC) alignment on various HfZrO films as a function of Hf concentration was studied. In the HfZrO system, Hf can act as a supporter to produce a uniform alignment layer. From pre-tilt measurement, LC cells with 5% and 10% Hf were optimized to perform as a device. By X-ray photoelectron spectroscopy (XPS) analysis, the proper amount of Hf addition in the ZrO system resulted in less oxygen vacancies which caused the LCs to be orientated more uniformly. However, too much Hf led to degradation of the LC cells due to the formation of HfO2 in the HfZrO films.

AB - Liquid crystal (LC) alignment on various HfZrO films as a function of Hf concentration was studied. In the HfZrO system, Hf can act as a supporter to produce a uniform alignment layer. From pre-tilt measurement, LC cells with 5% and 10% Hf were optimized to perform as a device. By X-ray photoelectron spectroscopy (XPS) analysis, the proper amount of Hf addition in the ZrO system resulted in less oxygen vacancies which caused the LCs to be orientated more uniformly. However, too much Hf led to degradation of the LC cells due to the formation of HfO2 in the HfZrO films.

UR - http://www.scopus.com/inward/record.url?scp=84923819493&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84923819493&partnerID=8YFLogxK

U2 - 10.1149/2.0111411jss

DO - 10.1149/2.0111411jss

M3 - Article

AN - SCOPUS:84923819493

SN - 2162-8769

VL - 3

SP - R212-R215

JO - ECS Journal of Solid State Science and Technology

JF - ECS Journal of Solid State Science and Technology

IS - 11

ER -

Liquid crystal aligning capabilities in solution-processed HfZrO layers created via ion-beam irradiation

Abstract

Bibliographical note

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this