Liquid crystal aligning capabilities in solution-processed HfZrO layers created via ion-beam irradiation

Seon Yeong Kim, Hong Gyu Park, Min Jae Cho, Hae Chang Jeong, Dai Hyun Kim, Dae Shik Seo

Research output: Contribution to journalArticlepeer-review

1 Citation (Scopus)

Abstract

Liquid crystal (LC) alignment on various HfZrO films as a function of Hf concentration was studied. In the HfZrO system, Hf can act as a supporter to produce a uniform alignment layer. From pre-tilt measurement, LC cells with 5% and 10% Hf were optimized to perform as a device. By X-ray photoelectron spectroscopy (XPS) analysis, the proper amount of Hf addition in the ZrO system resulted in less oxygen vacancies which caused the LCs to be orientated more uniformly. However, too much Hf led to degradation of the LC cells due to the formation of HfO2 in the HfZrO films.

Original languageEnglish
Pages (from-to)R212-R215
JournalECS Journal of Solid State Science and Technology
Volume3
Issue number11
DOIs
Publication statusPublished - 2014

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials

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