TY - JOUR
T1 - Liquid crystal alignment and electrooptical characteristics of vertical alignment liquid crystal display on SiOx thin film obliquely deposited by sputtering
AU - Choi, Sung Ho
AU - Hwang, Jeoung Yeon
AU - Kim, Sungyeon
AU - Oh, Byeong Yun
AU - Myoung, Jae Min
AU - Seo, Dae Shik
PY - 2006/12
Y1 - 2006/12
N2 - We studied the effects of liquid crystal (LC) alignment characteristics on a SiOx thin films of various thicknesses deposited at an oblique angle of 45° by RF magnetic sputtering. A uniform LC alignment characteristic was achieved on the SiOx thin film, and the pretilt angle was about 90°. The thermal stability of the SiOx thin film was sustained until 200°C. There was no difference in LC aligning capability owing to the thickness of SiOx thin film obliquely deposited at 45°. The vertical alignment liquid crystal display (VA-LCD) on the SiO x thin film deposited at the oblique angle of 45° by sputtering showed good electrooptical characteristics. These results suggest that a uniform homeotropic LC alignment can be achieved and a large VA-LCD can be produced by sputtering.
AB - We studied the effects of liquid crystal (LC) alignment characteristics on a SiOx thin films of various thicknesses deposited at an oblique angle of 45° by RF magnetic sputtering. A uniform LC alignment characteristic was achieved on the SiOx thin film, and the pretilt angle was about 90°. The thermal stability of the SiOx thin film was sustained until 200°C. There was no difference in LC aligning capability owing to the thickness of SiOx thin film obliquely deposited at 45°. The vertical alignment liquid crystal display (VA-LCD) on the SiO x thin film deposited at the oblique angle of 45° by sputtering showed good electrooptical characteristics. These results suggest that a uniform homeotropic LC alignment can be achieved and a large VA-LCD can be produced by sputtering.
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U2 - 10.1143/JJAP.45.L1280
DO - 10.1143/JJAP.45.L1280
M3 - Article
AN - SCOPUS:34547902878
VL - 45
SP - L1280-L1282
JO - Japanese Journal of Applied Physics, Part 2: Letters
JF - Japanese Journal of Applied Physics, Part 2: Letters
SN - 0021-4922
IS - 46-50
ER -