Liquid crystal alignment capability by the UV alignment method in a-C:H thin films

Jeoung Yeon Hwang; Yong Min Jo; Dae Shik Seo; Jin Jang

doi:10.1143/JJAP.42.L114

Liquid crystal alignment capability by the UV alignment method in a-C:H thin films

Jeoung Yeon Hwang, Yong Min Jo, Dae Shik Seo, Jin Jang

Department of Electrical and Electronic Engineering

Research output: Contribution to journal › Letter

12 Citations (Scopus)

Abstract

We studied the nematic liquid crystal (NLC) alignment capability by the UV alignment method on a a-C:H thin-film surface. A good LC alignment by UV irradiation on a a-C:H thin-film surface at a layer thickness of 200 Å was achieved. Also, a good LC alignment by the UV alignment method on the a-C:H thin film surface was observed at an annealing temperature of 180°C However, the alignment defect of the NLC was observed at an annealing temperature above 200°C Consequently, a good thermal stability of LC alignment by the UV alignment method on the a-C:H thin-film surface can be achieved.

Original language	English
Pages (from-to)	L114-L116
Journal	Japanese Journal of Applied Physics, Part 2: Letters
Volume	42
Issue number	2 A
DOIs	https://doi.org/10.1143/JJAP.42.L114
Publication status	Published - 2003 Feb 1

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All Science Journal Classification (ASJC) codes

Engineering(all)
Physics and Astronomy (miscellaneous)
Physics and Astronomy(all)

Cite this

Hwang, J. Y., Jo, Y. M., Seo, D. S., & Jang, J. (2003). Liquid crystal alignment capability by the UV alignment method in a-C:H thin films. Japanese Journal of Applied Physics, Part 2: Letters, 42(2 A), L114-L116. https://doi.org/10.1143/JJAP.42.L114

@article{03fc1d5aa3ab4695aa3a9597f5d893cb,

title = "Liquid crystal alignment capability by the UV alignment method in a-C:H thin films",

abstract = "We studied the nematic liquid crystal (NLC) alignment capability by the UV alignment method on a a-C:H thin-film surface. A good LC alignment by UV irradiation on a a-C:H thin-film surface at a layer thickness of 200 {\AA} was achieved. Also, a good LC alignment by the UV alignment method on the a-C:H thin film surface was observed at an annealing temperature of 180°C However, the alignment defect of the NLC was observed at an annealing temperature above 200°C Consequently, a good thermal stability of LC alignment by the UV alignment method on the a-C:H thin-film surface can be achieved.",

author = "Hwang, {Jeoung Yeon} and Jo, {Yong Min} and Seo, {Dae Shik} and Jin Jang",

year = "2003",

month = feb,

day = "1",

doi = "10.1143/JJAP.42.L114",

language = "English",

volume = "42",

pages = "L114--L116",

journal = "Japanese Journal of Applied Physics, Part 2: Letters",

issn = "0021-4922",

number = "2 A",

}

TY - JOUR

T1 - Liquid crystal alignment capability by the UV alignment method in a-C:H thin films

AU - Hwang, Jeoung Yeon

AU - Jo, Yong Min

AU - Seo, Dae Shik

AU - Jang, Jin

PY - 2003/2/1

Y1 - 2003/2/1

N2 - We studied the nematic liquid crystal (NLC) alignment capability by the UV alignment method on a a-C:H thin-film surface. A good LC alignment by UV irradiation on a a-C:H thin-film surface at a layer thickness of 200 Å was achieved. Also, a good LC alignment by the UV alignment method on the a-C:H thin film surface was observed at an annealing temperature of 180°C However, the alignment defect of the NLC was observed at an annealing temperature above 200°C Consequently, a good thermal stability of LC alignment by the UV alignment method on the a-C:H thin-film surface can be achieved.

AB - We studied the nematic liquid crystal (NLC) alignment capability by the UV alignment method on a a-C:H thin-film surface. A good LC alignment by UV irradiation on a a-C:H thin-film surface at a layer thickness of 200 Å was achieved. Also, a good LC alignment by the UV alignment method on the a-C:H thin film surface was observed at an annealing temperature of 180°C However, the alignment defect of the NLC was observed at an annealing temperature above 200°C Consequently, a good thermal stability of LC alignment by the UV alignment method on the a-C:H thin-film surface can be achieved.

UR - http://www.scopus.com/inward/record.url?scp=0037318876&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0037318876&partnerID=8YFLogxK

U2 - 10.1143/JJAP.42.L114

DO - 10.1143/JJAP.42.L114

M3 - Letter

AN - SCOPUS:0037318876

VL - 42

SP - L114-L116

JO - Japanese Journal of Applied Physics, Part 2: Letters

JF - Japanese Journal of Applied Physics, Part 2: Letters

SN - 0021-4922

IS - 2 A

ER -

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10.1143/JJAP.42.L114