Liquid crystal alignment effects on SiNx thin film layers treated by ion-beam irradiation

Sang Keuk Lee, Jong Hwan Kim, Byeong Yun Oh, Dong Hun Kang, Byoung Yong Kim, Jin Woo Han, Young Hwan Kim, Jeong Min Han, Jeoung Yeon Hwang, Chul Ho Ok, Dae-Shik Seo

Research output: Contribution to journalArticle

12 Citations (Scopus)

Abstract

Nematic liquid crystal (NLC) alignment effects on SiNx thin film layers treated by ion-beam irradiation for three types of N ratio were successfully studied for the first time. The SiNx thin film was deposited by plasma-enhanced chemical vapor deposition using three types of N ratio. To characterize the film, atomic force microscopy was performed. Good LC aligning capabilities on the SiNx thin film treated by ion-beam irradiation for all N ratios can be achieved. The low pretilt angle for an NLC on the SiNx thin film treated by ion-beam irradiation was observed and could be adopted in planar alignment liquid crystal display applications as in-plane switching and fringe-field switching modes.

Original languageEnglish
Pages (from-to)7711-7713
Number of pages3
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume46
Issue number12
DOIs
Publication statusPublished - 2007 Dec 6

Fingerprint

Liquid crystals
Ion beams
ion beams
liquid crystals
alignment
Irradiation
Thin films
irradiation
Nematic liquid crystals
thin films
Plasma enhanced chemical vapor deposition
Liquid crystal displays
Atomic force microscopy
vapor deposition
atomic force microscopy

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

Lee, Sang Keuk ; Kim, Jong Hwan ; Oh, Byeong Yun ; Kang, Dong Hun ; Kim, Byoung Yong ; Han, Jin Woo ; Kim, Young Hwan ; Han, Jeong Min ; Hwang, Jeoung Yeon ; Ok, Chul Ho ; Seo, Dae-Shik. / Liquid crystal alignment effects on SiNx thin film layers treated by ion-beam irradiation. In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 2007 ; Vol. 46, No. 12. pp. 7711-7713.
@article{d2afd3ed0d19438f8ea8eb0b07211b87,
title = "Liquid crystal alignment effects on SiNx thin film layers treated by ion-beam irradiation",
abstract = "Nematic liquid crystal (NLC) alignment effects on SiNx thin film layers treated by ion-beam irradiation for three types of N ratio were successfully studied for the first time. The SiNx thin film was deposited by plasma-enhanced chemical vapor deposition using three types of N ratio. To characterize the film, atomic force microscopy was performed. Good LC aligning capabilities on the SiNx thin film treated by ion-beam irradiation for all N ratios can be achieved. The low pretilt angle for an NLC on the SiNx thin film treated by ion-beam irradiation was observed and could be adopted in planar alignment liquid crystal display applications as in-plane switching and fringe-field switching modes.",
author = "Lee, {Sang Keuk} and Kim, {Jong Hwan} and Oh, {Byeong Yun} and Kang, {Dong Hun} and Kim, {Byoung Yong} and Han, {Jin Woo} and Kim, {Young Hwan} and Han, {Jeong Min} and Hwang, {Jeoung Yeon} and Ok, {Chul Ho} and Dae-Shik Seo",
year = "2007",
month = "12",
day = "6",
doi = "10.1143/JJAP.46.7711",
language = "English",
volume = "46",
pages = "7711--7713",
journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",
issn = "0021-4922",
publisher = "Japan Society of Applied Physics",
number = "12",

}

Liquid crystal alignment effects on SiNx thin film layers treated by ion-beam irradiation. / Lee, Sang Keuk; Kim, Jong Hwan; Oh, Byeong Yun; Kang, Dong Hun; Kim, Byoung Yong; Han, Jin Woo; Kim, Young Hwan; Han, Jeong Min; Hwang, Jeoung Yeon; Ok, Chul Ho; Seo, Dae-Shik.

In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 46, No. 12, 06.12.2007, p. 7711-7713.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Liquid crystal alignment effects on SiNx thin film layers treated by ion-beam irradiation

AU - Lee, Sang Keuk

AU - Kim, Jong Hwan

AU - Oh, Byeong Yun

AU - Kang, Dong Hun

AU - Kim, Byoung Yong

AU - Han, Jin Woo

AU - Kim, Young Hwan

AU - Han, Jeong Min

AU - Hwang, Jeoung Yeon

AU - Ok, Chul Ho

AU - Seo, Dae-Shik

PY - 2007/12/6

Y1 - 2007/12/6

N2 - Nematic liquid crystal (NLC) alignment effects on SiNx thin film layers treated by ion-beam irradiation for three types of N ratio were successfully studied for the first time. The SiNx thin film was deposited by plasma-enhanced chemical vapor deposition using three types of N ratio. To characterize the film, atomic force microscopy was performed. Good LC aligning capabilities on the SiNx thin film treated by ion-beam irradiation for all N ratios can be achieved. The low pretilt angle for an NLC on the SiNx thin film treated by ion-beam irradiation was observed and could be adopted in planar alignment liquid crystal display applications as in-plane switching and fringe-field switching modes.

AB - Nematic liquid crystal (NLC) alignment effects on SiNx thin film layers treated by ion-beam irradiation for three types of N ratio were successfully studied for the first time. The SiNx thin film was deposited by plasma-enhanced chemical vapor deposition using three types of N ratio. To characterize the film, atomic force microscopy was performed. Good LC aligning capabilities on the SiNx thin film treated by ion-beam irradiation for all N ratios can be achieved. The low pretilt angle for an NLC on the SiNx thin film treated by ion-beam irradiation was observed and could be adopted in planar alignment liquid crystal display applications as in-plane switching and fringe-field switching modes.

UR - http://www.scopus.com/inward/record.url?scp=37549022641&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=37549022641&partnerID=8YFLogxK

U2 - 10.1143/JJAP.46.7711

DO - 10.1143/JJAP.46.7711

M3 - Article

AN - SCOPUS:37549022641

VL - 46

SP - 7711

EP - 7713

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

SN - 0021-4922

IS - 12

ER -