Li4SiO4-Based Artificial Passivation Thin Film for Improving Interfacial Stability of Li Metal Anodes

Ji Young Kim, A. Young Kim, Guicheng Liu, Jae Young Woo, Hansung Kim, Joong Kee Lee

Research output: Contribution to journalArticle

15 Citations (Scopus)

Abstract

An amorphous SiO2 (a-SiO2) thin film was developed as an artificial passivation layer to stabilize Li metal anodes during electrochemical reactions. The thin film was prepared using an electron cyclotron resonance-chemical vapor deposition apparatus. The obtained passivation layer has a hierarchical structure, which is composed of lithium silicide, lithiated silicon oxide, and a-SiO2. The thickness of the a-SiO2 passivation layer could be varied by changing the processing time, whereas that of the lithium silicide and lithiated silicon oxide layers was almost constant. During cycling, the surface of the a-SiO2 passivation layer is converted into lithium silicate (Li4SiO4), and the portion of Li4SiO4 depends on the thickness of a-SiO2. A minimum overpotential of 21.7 mV was observed at the Li metal electrode at a current density of 3 mA cm-2 with flat voltage profiles, when an a-SiO2 passivation layer of 92.5 nm was used. The Li metal with this optimized thin passivation layer also showed the lowest charge-transfer resistance (3.948 Ω cm) and the highest Li ion diffusivity (7.06 × 10-14 cm2 s-1) after cycling in a Li-S battery. The existence of the Li4SiO4 artificial passivation layer prevents the corrosion of Li metal by suppressing Li dendritic growth and improving the ionic conductivity, which contribute to the low charge-transfer resistance and high Li ion diffusivity of the electrode.

Original languageEnglish
Pages (from-to)8692-8701
Number of pages10
JournalACS Applied Materials and Interfaces
Volume10
Issue number10
DOIs
Publication statusPublished - 2018 Mar 14

Fingerprint

Passivation
Anodes
Metals
Thin films
Lithium
Silicon oxides
Charge transfer
Ions
Silicates
Electrodes
Electron cyclotron resonance
Amorphous films
Ionic conductivity
Chemical vapor deposition
Current density
Corrosion
Electric potential
Processing

All Science Journal Classification (ASJC) codes

  • Materials Science(all)

Cite this

Kim, Ji Young ; Kim, A. Young ; Liu, Guicheng ; Woo, Jae Young ; Kim, Hansung ; Lee, Joong Kee. / Li4SiO4-Based Artificial Passivation Thin Film for Improving Interfacial Stability of Li Metal Anodes. In: ACS Applied Materials and Interfaces. 2018 ; Vol. 10, No. 10. pp. 8692-8701.
@article{bf8da1b7d7604372b5369f117db7181d,
title = "Li4SiO4-Based Artificial Passivation Thin Film for Improving Interfacial Stability of Li Metal Anodes",
abstract = "An amorphous SiO2 (a-SiO2) thin film was developed as an artificial passivation layer to stabilize Li metal anodes during electrochemical reactions. The thin film was prepared using an electron cyclotron resonance-chemical vapor deposition apparatus. The obtained passivation layer has a hierarchical structure, which is composed of lithium silicide, lithiated silicon oxide, and a-SiO2. The thickness of the a-SiO2 passivation layer could be varied by changing the processing time, whereas that of the lithium silicide and lithiated silicon oxide layers was almost constant. During cycling, the surface of the a-SiO2 passivation layer is converted into lithium silicate (Li4SiO4), and the portion of Li4SiO4 depends on the thickness of a-SiO2. A minimum overpotential of 21.7 mV was observed at the Li metal electrode at a current density of 3 mA cm-2 with flat voltage profiles, when an a-SiO2 passivation layer of 92.5 nm was used. The Li metal with this optimized thin passivation layer also showed the lowest charge-transfer resistance (3.948 Ω cm) and the highest Li ion diffusivity (7.06 × 10-14 cm2 s-1) after cycling in a Li-S battery. The existence of the Li4SiO4 artificial passivation layer prevents the corrosion of Li metal by suppressing Li dendritic growth and improving the ionic conductivity, which contribute to the low charge-transfer resistance and high Li ion diffusivity of the electrode.",
author = "Kim, {Ji Young} and Kim, {A. Young} and Guicheng Liu and Woo, {Jae Young} and Hansung Kim and Lee, {Joong Kee}",
year = "2018",
month = "3",
day = "14",
doi = "10.1021/acsami.7b18997",
language = "English",
volume = "10",
pages = "8692--8701",
journal = "ACS applied materials & interfaces",
issn = "1944-8244",
publisher = "American Chemical Society",
number = "10",

}

Li4SiO4-Based Artificial Passivation Thin Film for Improving Interfacial Stability of Li Metal Anodes. / Kim, Ji Young; Kim, A. Young; Liu, Guicheng; Woo, Jae Young; Kim, Hansung; Lee, Joong Kee.

In: ACS Applied Materials and Interfaces, Vol. 10, No. 10, 14.03.2018, p. 8692-8701.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Li4SiO4-Based Artificial Passivation Thin Film for Improving Interfacial Stability of Li Metal Anodes

AU - Kim, Ji Young

AU - Kim, A. Young

AU - Liu, Guicheng

AU - Woo, Jae Young

AU - Kim, Hansung

AU - Lee, Joong Kee

PY - 2018/3/14

Y1 - 2018/3/14

N2 - An amorphous SiO2 (a-SiO2) thin film was developed as an artificial passivation layer to stabilize Li metal anodes during electrochemical reactions. The thin film was prepared using an electron cyclotron resonance-chemical vapor deposition apparatus. The obtained passivation layer has a hierarchical structure, which is composed of lithium silicide, lithiated silicon oxide, and a-SiO2. The thickness of the a-SiO2 passivation layer could be varied by changing the processing time, whereas that of the lithium silicide and lithiated silicon oxide layers was almost constant. During cycling, the surface of the a-SiO2 passivation layer is converted into lithium silicate (Li4SiO4), and the portion of Li4SiO4 depends on the thickness of a-SiO2. A minimum overpotential of 21.7 mV was observed at the Li metal electrode at a current density of 3 mA cm-2 with flat voltage profiles, when an a-SiO2 passivation layer of 92.5 nm was used. The Li metal with this optimized thin passivation layer also showed the lowest charge-transfer resistance (3.948 Ω cm) and the highest Li ion diffusivity (7.06 × 10-14 cm2 s-1) after cycling in a Li-S battery. The existence of the Li4SiO4 artificial passivation layer prevents the corrosion of Li metal by suppressing Li dendritic growth and improving the ionic conductivity, which contribute to the low charge-transfer resistance and high Li ion diffusivity of the electrode.

AB - An amorphous SiO2 (a-SiO2) thin film was developed as an artificial passivation layer to stabilize Li metal anodes during electrochemical reactions. The thin film was prepared using an electron cyclotron resonance-chemical vapor deposition apparatus. The obtained passivation layer has a hierarchical structure, which is composed of lithium silicide, lithiated silicon oxide, and a-SiO2. The thickness of the a-SiO2 passivation layer could be varied by changing the processing time, whereas that of the lithium silicide and lithiated silicon oxide layers was almost constant. During cycling, the surface of the a-SiO2 passivation layer is converted into lithium silicate (Li4SiO4), and the portion of Li4SiO4 depends on the thickness of a-SiO2. A minimum overpotential of 21.7 mV was observed at the Li metal electrode at a current density of 3 mA cm-2 with flat voltage profiles, when an a-SiO2 passivation layer of 92.5 nm was used. The Li metal with this optimized thin passivation layer also showed the lowest charge-transfer resistance (3.948 Ω cm) and the highest Li ion diffusivity (7.06 × 10-14 cm2 s-1) after cycling in a Li-S battery. The existence of the Li4SiO4 artificial passivation layer prevents the corrosion of Li metal by suppressing Li dendritic growth and improving the ionic conductivity, which contribute to the low charge-transfer resistance and high Li ion diffusivity of the electrode.

UR - http://www.scopus.com/inward/record.url?scp=85043779945&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85043779945&partnerID=8YFLogxK

U2 - 10.1021/acsami.7b18997

DO - 10.1021/acsami.7b18997

M3 - Article

AN - SCOPUS:85043779945

VL - 10

SP - 8692

EP - 8701

JO - ACS applied materials & interfaces

JF - ACS applied materials & interfaces

SN - 1944-8244

IS - 10

ER -