We have demonstrated lithography-free, simple, and large area fabrication method for subwavelength antireflection structures (SAS) to achieve low reflectance of silicon (Si) surface. Thin film of Pt/Pd alloy on a Si substrate is melted and agglomerated into hemispheric nanodots by thermal dewetting process, and the array of the nanodots is used as etch mask for reactive ion etching (RIE) to form SAS on the Si surface. Two critical parameters, the temperature of thermal dewetting processes and the duration of RIE, have been experimentally studied to achieve very low reflectance from SAS. All the SAS have well-tapered shapes that the refractive index may be changed continuously and monotonously in the direction of incident light. In the wavelength range from 350 to 1800 nm, the measured reflectance of the fabricated SAS averages out to 5%. Especially in the wavelength range from 550 to 650 nm, which falls within visible light, the measured reflectance is under 0.01%.
Bibliographical noteFunding Information:
Acknowledgment This research was supported by Nano R&D program through the Korea Science and Engineering Foundation funded by the Ministry of Science & Technology (2008-02916), and partially by a Grant-in-Aid for New and Renewable Energy Technology Development Programs from the Korea Ministry of Knowledge Economy (No. 2008-N-PV08-P-06-0-000).
All Science Journal Classification (ASJC) codes
- Materials Science(all)
- Condensed Matter Physics