Lithography-free fabrication of single crystalline silicon tubular nanostructures on large area

Hak Kyun Jung, Jungwook Choi, Hyungjoo Na, Dae Sung Kwon, Min Ook Kim, Jeong Jin Kang, Jongbaeg Kim

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

A novel method to fabricate single-crystalline silicon tubular nanostructures on large area was developed. Utilizing the thermal dewetting of a thin metal film, redeposition of dewetted metal nanodots, and etch selectivity between silicon substrate and metal masks, the tubular nanostructures were formed from single crystalline silicon substrate on large area without using any nano-patterning process. This lithography-free fabrication method composed only of sputtering, rapid thermal process and reactive ion etch (RIE) is simple and cost effective batch-process. The transmission electron microscopic inspection revealed that the silicon tubular nanostructures are in the range of 1 μm in length, 250 nm in diameter, 75 nm in wall-thickness and 380 nm in hollow-depth.

Original languageEnglish
Pages (from-to)325-328
Number of pages4
JournalMicroelectronic Engineering
Volume98
DOIs
Publication statusPublished - 2012 Oct 1

Fingerprint

Silicon
Lithography
Nanostructures
lithography
Crystalline materials
Fabrication
fabrication
Metals
silicon
Substrates
metal films
metals
drying
Sputtering
Masks
inspection
hollow
masks
Inspection
selectivity

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering

Cite this

Jung, Hak Kyun ; Choi, Jungwook ; Na, Hyungjoo ; Kwon, Dae Sung ; Kim, Min Ook ; Kang, Jeong Jin ; Kim, Jongbaeg. / Lithography-free fabrication of single crystalline silicon tubular nanostructures on large area. In: Microelectronic Engineering. 2012 ; Vol. 98. pp. 325-328.
@article{ee5b66a8f12744f9a1df937a270176ec,
title = "Lithography-free fabrication of single crystalline silicon tubular nanostructures on large area",
abstract = "A novel method to fabricate single-crystalline silicon tubular nanostructures on large area was developed. Utilizing the thermal dewetting of a thin metal film, redeposition of dewetted metal nanodots, and etch selectivity between silicon substrate and metal masks, the tubular nanostructures were formed from single crystalline silicon substrate on large area without using any nano-patterning process. This lithography-free fabrication method composed only of sputtering, rapid thermal process and reactive ion etch (RIE) is simple and cost effective batch-process. The transmission electron microscopic inspection revealed that the silicon tubular nanostructures are in the range of 1 μm in length, 250 nm in diameter, 75 nm in wall-thickness and 380 nm in hollow-depth.",
author = "Jung, {Hak Kyun} and Jungwook Choi and Hyungjoo Na and Kwon, {Dae Sung} and Kim, {Min Ook} and Kang, {Jeong Jin} and Jongbaeg Kim",
year = "2012",
month = "10",
day = "1",
doi = "10.1016/j.mee.2012.07.079",
language = "English",
volume = "98",
pages = "325--328",
journal = "Microelectronic Engineering",
issn = "0167-9317",
publisher = "Elsevier",

}

Lithography-free fabrication of single crystalline silicon tubular nanostructures on large area. / Jung, Hak Kyun; Choi, Jungwook; Na, Hyungjoo; Kwon, Dae Sung; Kim, Min Ook; Kang, Jeong Jin; Kim, Jongbaeg.

In: Microelectronic Engineering, Vol. 98, 01.10.2012, p. 325-328.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Lithography-free fabrication of single crystalline silicon tubular nanostructures on large area

AU - Jung, Hak Kyun

AU - Choi, Jungwook

AU - Na, Hyungjoo

AU - Kwon, Dae Sung

AU - Kim, Min Ook

AU - Kang, Jeong Jin

AU - Kim, Jongbaeg

PY - 2012/10/1

Y1 - 2012/10/1

N2 - A novel method to fabricate single-crystalline silicon tubular nanostructures on large area was developed. Utilizing the thermal dewetting of a thin metal film, redeposition of dewetted metal nanodots, and etch selectivity between silicon substrate and metal masks, the tubular nanostructures were formed from single crystalline silicon substrate on large area without using any nano-patterning process. This lithography-free fabrication method composed only of sputtering, rapid thermal process and reactive ion etch (RIE) is simple and cost effective batch-process. The transmission electron microscopic inspection revealed that the silicon tubular nanostructures are in the range of 1 μm in length, 250 nm in diameter, 75 nm in wall-thickness and 380 nm in hollow-depth.

AB - A novel method to fabricate single-crystalline silicon tubular nanostructures on large area was developed. Utilizing the thermal dewetting of a thin metal film, redeposition of dewetted metal nanodots, and etch selectivity between silicon substrate and metal masks, the tubular nanostructures were formed from single crystalline silicon substrate on large area without using any nano-patterning process. This lithography-free fabrication method composed only of sputtering, rapid thermal process and reactive ion etch (RIE) is simple and cost effective batch-process. The transmission electron microscopic inspection revealed that the silicon tubular nanostructures are in the range of 1 μm in length, 250 nm in diameter, 75 nm in wall-thickness and 380 nm in hollow-depth.

UR - http://www.scopus.com/inward/record.url?scp=84865604956&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84865604956&partnerID=8YFLogxK

U2 - 10.1016/j.mee.2012.07.079

DO - 10.1016/j.mee.2012.07.079

M3 - Article

AN - SCOPUS:84865604956

VL - 98

SP - 325

EP - 328

JO - Microelectronic Engineering

JF - Microelectronic Engineering

SN - 0167-9317

ER -