Load-controlled roll transfer of oxide transistors for stretchable electronics

Bhupendra K. Sharma, Bongkyun Jang, Jeong Eun Lee, Sang Hoon Bae, Tae Woong Kim, Hak Joo Lee, Jae Hyun Kim, Jong Hyun Ahn

Research output: Contribution to journalArticle

53 Citations (Scopus)

Abstract

A stretchable and transparent In-Ga-Zn-O (IGZO) thin film transistors with high electrical performance and scalability is demonstrated. A load-controlled roll transfer method is realized for fully automated and scalable transfer of the IGZO TFTs from a rigid substrate to a nonconventional elastomeric substrate. The IGZO TFTs exhibit high electrical performance under stretching and cyclic tests, demonstrating the potentiality of the load-controlled roll transfer in stretchable electronics. The mechanics of the load-controlled roll transfer is investigated and simulated, and it is shown that the strain level experienced by the active layers of the device can be controlled to well below their maximum fracture level during transfer. A roll transfer printing method for In-Ga-Zn-O (IGZO) thin film transistors (TFTs) on a stretchable substrate is demonstrated. The TFTs' electrical performance is investigated under stretching and cyclic tests. Mechanics involved in the transferring process are investigated and simulated, which shows that the strain level experienced by the device's active layers is well below the maximum fracture level.

Original languageEnglish
Pages (from-to)2024-2032
Number of pages9
JournalAdvanced Functional Materials
Volume23
Issue number16
DOIs
Publication statusPublished - 2013 Apr 25

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics

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  • Cite this

    Sharma, B. K., Jang, B., Lee, J. E., Bae, S. H., Kim, T. W., Lee, H. J., Kim, J. H., & Ahn, J. H. (2013). Load-controlled roll transfer of oxide transistors for stretchable electronics. Advanced Functional Materials, 23(16), 2024-2032. https://doi.org/10.1002/adfm.201202519