Local epitaxial growth of Ru thin films by atomic layer deposition at low temperature

Seong Keun Kim; Sora Han; Gun Hwan Kim; Jae Hyuck Jang; Jeong Hwan Han; Cheol Seong Hwang

doi:10.1149/1.3596018

Local epitaxial growth of Ru thin films by atomic layer deposition at low temperature

Seong Keun Kim, Sora Han, Gun Hwan Kim, Jae Hyuck Jang, Jeong Hwan Han, Cheol Seong Hwang

School of System & Semiconductor Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

This study demonstrated that atomic layer deposition (ALD) is a promising deposition method for the epitaxial growth of Ru thin films on lattice matched metal film substrates. Ru films were grown on face centered cubic metal substrates using 2,4-(dimethylpentadienyl)(ethylcyclopentadienyl)Ru and O ₂. Despite the low growth temperature (210°C), highly (002) oriented local epitaxial Ru films were formed on highly (111) oriented Pt and Au substrates due to the structural compatibility between the (111) plane of the Pt and Au substrates and the (002) plane of Ru. The Ru films on Pt substrates showed better epitaxial properties than those on Au substrates because of the smaller lattice mismatch between (111) Pt and (002) Ru (2.52%, 6.59% for the case of Au). The highly (002) oriented local epitaxial Ru films showed a lower growth rate than the more randomly oriented films.

Original language	English
Pages (from-to)	D477-D481
Journal	Journal of the Electrochemical Society
Volume	158
Issue number	8
DOIs	https://doi.org/10.1149/1.3596018
Publication status	Published - 2011 Aug

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Renewable Energy, Sustainability and the Environment
Surfaces, Coatings and Films
Electrochemistry
Materials Chemistry

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

Access to Document

10.1149/1.3596018

Cite this

@article{c27b2e52274a4d28be47054314c6343a,

title = "Local epitaxial growth of Ru thin films by atomic layer deposition at low temperature",

abstract = "This study demonstrated that atomic layer deposition (ALD) is a promising deposition method for the epitaxial growth of Ru thin films on lattice matched metal film substrates. Ru films were grown on face centered cubic metal substrates using 2,4-(dimethylpentadienyl)(ethylcyclopentadienyl)Ru and O 2. Despite the low growth temperature (210°C), highly (002) oriented local epitaxial Ru films were formed on highly (111) oriented Pt and Au substrates due to the structural compatibility between the (111) plane of the Pt and Au substrates and the (002) plane of Ru. The Ru films on Pt substrates showed better epitaxial properties than those on Au substrates because of the smaller lattice mismatch between (111) Pt and (002) Ru (2.52%, 6.59% for the case of Au). The highly (002) oriented local epitaxial Ru films showed a lower growth rate than the more randomly oriented films.",

author = "Kim, {Seong Keun} and Sora Han and Kim, {Gun Hwan} and Jang, {Jae Hyuck} and Han, {Jeong Hwan} and Hwang, {Cheol Seong}",

year = "2011",

month = aug,

doi = "10.1149/1.3596018",

language = "English",

volume = "158",

pages = "D477--D481",

journal = "Journal of the Electrochemical Society",

issn = "0013-4651",

publisher = "Electrochemical Society, Inc.",

number = "8",

}

TY - JOUR

T1 - Local epitaxial growth of Ru thin films by atomic layer deposition at low temperature

AU - Kim, Seong Keun

AU - Han, Sora

AU - Kim, Gun Hwan

AU - Jang, Jae Hyuck

AU - Han, Jeong Hwan

AU - Hwang, Cheol Seong

PY - 2011/8

Y1 - 2011/8

N2 - This study demonstrated that atomic layer deposition (ALD) is a promising deposition method for the epitaxial growth of Ru thin films on lattice matched metal film substrates. Ru films were grown on face centered cubic metal substrates using 2,4-(dimethylpentadienyl)(ethylcyclopentadienyl)Ru and O 2. Despite the low growth temperature (210°C), highly (002) oriented local epitaxial Ru films were formed on highly (111) oriented Pt and Au substrates due to the structural compatibility between the (111) plane of the Pt and Au substrates and the (002) plane of Ru. The Ru films on Pt substrates showed better epitaxial properties than those on Au substrates because of the smaller lattice mismatch between (111) Pt and (002) Ru (2.52%, 6.59% for the case of Au). The highly (002) oriented local epitaxial Ru films showed a lower growth rate than the more randomly oriented films.

AB - This study demonstrated that atomic layer deposition (ALD) is a promising deposition method for the epitaxial growth of Ru thin films on lattice matched metal film substrates. Ru films were grown on face centered cubic metal substrates using 2,4-(dimethylpentadienyl)(ethylcyclopentadienyl)Ru and O 2. Despite the low growth temperature (210°C), highly (002) oriented local epitaxial Ru films were formed on highly (111) oriented Pt and Au substrates due to the structural compatibility between the (111) plane of the Pt and Au substrates and the (002) plane of Ru. The Ru films on Pt substrates showed better epitaxial properties than those on Au substrates because of the smaller lattice mismatch between (111) Pt and (002) Ru (2.52%, 6.59% for the case of Au). The highly (002) oriented local epitaxial Ru films showed a lower growth rate than the more randomly oriented films.

UR - http://www.scopus.com/inward/record.url?scp=80051753653&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=80051753653&partnerID=8YFLogxK

U2 - 10.1149/1.3596018

DO - 10.1149/1.3596018

M3 - Article

AN - SCOPUS:80051753653

SN - 0013-4651

VL - 158

SP - D477-D481

JO - Journal of the Electrochemical Society

JF - Journal of the Electrochemical Society

IS - 8

ER -

Local epitaxial growth of Ru thin films by atomic layer deposition at low temperature

Abstract

All Science Journal Classification (ASJC) codes

UN SDGs

Access to Document

Other files and links

Fingerprint

Cite this