Local Hall effect in a hybrid InSb cross junction

W. Y. Kim, J. Y. Chang, S. H. Han, S. G. Chang, W. Y. Lee

Research output: Contribution to journalArticle

Abstract

We present the local Hall effect in a hybrid Hall device incorporating a micron-scaled InSb semiconductor cross junction and a single microstructured ferromagnetic element. A clear hysteresis loop was found to appear in the output signal for the cross junction with a ferromagnetic element due to the strong perpendicular component of the magnetic fringe field emanating from the edge of the ferromagnet. We demonstrate that the local fringe field from the ferromagnetic element inducing a Hall voltage improves the Hall sensitivity (4.5 Ω/Oe).

Original languageEnglish
Pages (from-to)1980-1982
Number of pages3
JournalPhysica Status Solidi (A) Applied Research
Volume201
Issue number8
DOIs
Publication statusPublished - 2004 Jun 1

Fingerprint

Hall effect
Hysteresis loops
Semiconductor materials
Electric potential
hysteresis
output
sensitivity
electric potential

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Kim, W. Y. ; Chang, J. Y. ; Han, S. H. ; Chang, S. G. ; Lee, W. Y. / Local Hall effect in a hybrid InSb cross junction. In: Physica Status Solidi (A) Applied Research. 2004 ; Vol. 201, No. 8. pp. 1980-1982.
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Local Hall effect in a hybrid InSb cross junction. / Kim, W. Y.; Chang, J. Y.; Han, S. H.; Chang, S. G.; Lee, W. Y.

In: Physica Status Solidi (A) Applied Research, Vol. 201, No. 8, 01.06.2004, p. 1980-1982.

Research output: Contribution to journalArticle

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