Local Strain Induced Band Gap Modulation and Photoluminescence Enhancement of Multilayer Transition Metal Dichalcogenides

Krishna P. Dhakal, Shrawan Roy, Houk Jang, Xiang Chen, Won Seok Yun, Hyunmin Kim, Jaedong Lee, Jeongyong Kim, Jong Hyun Ahn

Research output: Contribution to journalArticle

18 Citations (Scopus)

Abstract

The photocarrier relaxation between direct and indirect band gaps along the high symmetry K-γ line in the Brillion zone reveals interesting electronic properties of the transition metal dichalcogenides (TMDs) multilayer films. In this study, we reported on the local strain engineering and tuning of an electronic band structure of TMDs multilayer films along the K-γ line by artificially creating one-dimensional wrinkle structures. Significant photoluminescence (PL) intensity enhancement in conjunction with continuously tuned optical energy gaps was recorded at the high strain regions. A direct optical band gap along K-K points and an indirect optical gap along γ-K points measured from the PL spectra of multilayer samples monotonically decreased as the strain increased, while the indirect band gap along -γ was unaffected owing to the same level of local strain in the range of 0%-2%. The experimental results of band gap tuning were in agreement with the density functional theory calculation results. Local strain modified the band structure in which K-conduction band valley (CBV) was aligned below the -CBV, and this explained the observed local PL enhancement that made the material indirect via the K-γ transition. The study also reported experimental evidence for the funneling of photogenerated excitons toward regions of a higher strain at the top of the wrinkle geometry.

Original languageEnglish
Pages (from-to)5124-5133
Number of pages10
JournalChemistry of Materials
Volume29
Issue number12
DOIs
Publication statusPublished - 2017 Jun 27

Fingerprint

Transition metals
Photoluminescence
Multilayers
Energy gap
Modulation
Multilayer films
Conduction bands
Band structure
Tuning
Optical band gaps
Excitons
Electronic properties
Density functional theory
Geometry

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Chemical Engineering(all)
  • Materials Chemistry

Cite this

Dhakal, Krishna P. ; Roy, Shrawan ; Jang, Houk ; Chen, Xiang ; Yun, Won Seok ; Kim, Hyunmin ; Lee, Jaedong ; Kim, Jeongyong ; Ahn, Jong Hyun. / Local Strain Induced Band Gap Modulation and Photoluminescence Enhancement of Multilayer Transition Metal Dichalcogenides. In: Chemistry of Materials. 2017 ; Vol. 29, No. 12. pp. 5124-5133.
@article{bc3bab9fabf943f5b8abf4c633306a6b,
title = "Local Strain Induced Band Gap Modulation and Photoluminescence Enhancement of Multilayer Transition Metal Dichalcogenides",
abstract = "The photocarrier relaxation between direct and indirect band gaps along the high symmetry K-γ line in the Brillion zone reveals interesting electronic properties of the transition metal dichalcogenides (TMDs) multilayer films. In this study, we reported on the local strain engineering and tuning of an electronic band structure of TMDs multilayer films along the K-γ line by artificially creating one-dimensional wrinkle structures. Significant photoluminescence (PL) intensity enhancement in conjunction with continuously tuned optical energy gaps was recorded at the high strain regions. A direct optical band gap along K-K points and an indirect optical gap along γ-K points measured from the PL spectra of multilayer samples monotonically decreased as the strain increased, while the indirect band gap along -γ was unaffected owing to the same level of local strain in the range of 0{\%}-2{\%}. The experimental results of band gap tuning were in agreement with the density functional theory calculation results. Local strain modified the band structure in which K-conduction band valley (CBV) was aligned below the -CBV, and this explained the observed local PL enhancement that made the material indirect via the K-γ transition. The study also reported experimental evidence for the funneling of photogenerated excitons toward regions of a higher strain at the top of the wrinkle geometry.",
author = "Dhakal, {Krishna P.} and Shrawan Roy and Houk Jang and Xiang Chen and Yun, {Won Seok} and Hyunmin Kim and Jaedong Lee and Jeongyong Kim and Ahn, {Jong Hyun}",
year = "2017",
month = "6",
day = "27",
doi = "10.1021/acs.chemmater.7b00453",
language = "English",
volume = "29",
pages = "5124--5133",
journal = "Chemistry of Materials",
issn = "0897-4756",
publisher = "American Chemical Society",
number = "12",

}

Local Strain Induced Band Gap Modulation and Photoluminescence Enhancement of Multilayer Transition Metal Dichalcogenides. / Dhakal, Krishna P.; Roy, Shrawan; Jang, Houk; Chen, Xiang; Yun, Won Seok; Kim, Hyunmin; Lee, Jaedong; Kim, Jeongyong; Ahn, Jong Hyun.

In: Chemistry of Materials, Vol. 29, No. 12, 27.06.2017, p. 5124-5133.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Local Strain Induced Band Gap Modulation and Photoluminescence Enhancement of Multilayer Transition Metal Dichalcogenides

AU - Dhakal, Krishna P.

AU - Roy, Shrawan

AU - Jang, Houk

AU - Chen, Xiang

AU - Yun, Won Seok

AU - Kim, Hyunmin

AU - Lee, Jaedong

AU - Kim, Jeongyong

AU - Ahn, Jong Hyun

PY - 2017/6/27

Y1 - 2017/6/27

N2 - The photocarrier relaxation between direct and indirect band gaps along the high symmetry K-γ line in the Brillion zone reveals interesting electronic properties of the transition metal dichalcogenides (TMDs) multilayer films. In this study, we reported on the local strain engineering and tuning of an electronic band structure of TMDs multilayer films along the K-γ line by artificially creating one-dimensional wrinkle structures. Significant photoluminescence (PL) intensity enhancement in conjunction with continuously tuned optical energy gaps was recorded at the high strain regions. A direct optical band gap along K-K points and an indirect optical gap along γ-K points measured from the PL spectra of multilayer samples monotonically decreased as the strain increased, while the indirect band gap along -γ was unaffected owing to the same level of local strain in the range of 0%-2%. The experimental results of band gap tuning were in agreement with the density functional theory calculation results. Local strain modified the band structure in which K-conduction band valley (CBV) was aligned below the -CBV, and this explained the observed local PL enhancement that made the material indirect via the K-γ transition. The study also reported experimental evidence for the funneling of photogenerated excitons toward regions of a higher strain at the top of the wrinkle geometry.

AB - The photocarrier relaxation between direct and indirect band gaps along the high symmetry K-γ line in the Brillion zone reveals interesting electronic properties of the transition metal dichalcogenides (TMDs) multilayer films. In this study, we reported on the local strain engineering and tuning of an electronic band structure of TMDs multilayer films along the K-γ line by artificially creating one-dimensional wrinkle structures. Significant photoluminescence (PL) intensity enhancement in conjunction with continuously tuned optical energy gaps was recorded at the high strain regions. A direct optical band gap along K-K points and an indirect optical gap along γ-K points measured from the PL spectra of multilayer samples monotonically decreased as the strain increased, while the indirect band gap along -γ was unaffected owing to the same level of local strain in the range of 0%-2%. The experimental results of band gap tuning were in agreement with the density functional theory calculation results. Local strain modified the band structure in which K-conduction band valley (CBV) was aligned below the -CBV, and this explained the observed local PL enhancement that made the material indirect via the K-γ transition. The study also reported experimental evidence for the funneling of photogenerated excitons toward regions of a higher strain at the top of the wrinkle geometry.

UR - http://www.scopus.com/inward/record.url?scp=85021447470&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85021447470&partnerID=8YFLogxK

U2 - 10.1021/acs.chemmater.7b00453

DO - 10.1021/acs.chemmater.7b00453

M3 - Article

AN - SCOPUS:85021447470

VL - 29

SP - 5124

EP - 5133

JO - Chemistry of Materials

JF - Chemistry of Materials

SN - 0897-4756

IS - 12

ER -