Localized synthesis of silicon nanowires

O. Englander, D. Christensen, Mu Chiao, Jongbaeg Kim, L. Lin

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Citations (Scopus)

Abstract

Localized resistive heating of microstructures has been used to activate vapor-deposition synthesis of silicon nanowires in a room-temperature chamber. The process is localized, selective, scalable and compatible with on-chip microelectronics and, in addition, removes necessity of post-synthesis assembly of nanowires to accomplish integrated nano-electromechanical systems. Synthesized nanowires with dimensions of 30-80 nm in diameter and up to 10 μm in length have been successfully demonstrated and growth rates of up to 1 μm/min have been observed. This new class of manufacturing method enables direct integration of nanotechnology with larger-scale systems for potential sensing and actuation applications.

Original languageEnglish
Title of host publicationTRANSDUCERS 2003 - 12th International Conference on Solid-State Sensors, Actuators and Microsystems, Digest of Technical Papers
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages186-189
Number of pages4
ISBN (Electronic)0780377311, 9780780377318
DOIs
Publication statusPublished - 2003 Jan 1
Event12th International Conference on Solid-State Sensors, Actuators and Microsystems, TRANSDUCERS 2003 - Digest of Technical Papers - Boston, United States
Duration: 2003 Jun 82003 Jun 12

Publication series

NameTRANSDUCERS 2003 - 12th International Conference on Solid-State Sensors, Actuators and Microsystems, Digest of Technical Papers
Volume1

Other

Other12th International Conference on Solid-State Sensors, Actuators and Microsystems, TRANSDUCERS 2003 - Digest of Technical Papers
CountryUnited States
CityBoston
Period03/6/803/6/12

    Fingerprint

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

Cite this

Englander, O., Christensen, D., Chiao, M., Kim, J., & Lin, L. (2003). Localized synthesis of silicon nanowires. In TRANSDUCERS 2003 - 12th International Conference on Solid-State Sensors, Actuators and Microsystems, Digest of Technical Papers (pp. 186-189). [1215284] (TRANSDUCERS 2003 - 12th International Conference on Solid-State Sensors, Actuators and Microsystems, Digest of Technical Papers; Vol. 1). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/SENSOR.2003.1215284