Localized TiSi and TiN phases in Si/Ti/Al/Cu Ohmic contacts to AlGaN/GaN heterostructures

Seonno Yoon, Yunwon Song, Seung Min Lee, Hi Deok Lee, Jungwoo Oh

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

Microstructural changes in Si/Ti/Al/Cu (10/40/60/50 nm) Ohmic contacts to AlGaN/GaN heterostructure were investigated for complementary metal-oxide semiconductor compatible processes. Si/Ti/Al/Cu metallization exhibited a low specific contact resistance of 3.6 × 10-6 Ω-cm2 and contact resistance of 0.46 Ω-mm when a Si interfacial layer was used. Without a designated barrier metal, TiSix alloys that formed in the metallic region effectively suppressed Cu diffusion. The shallow TiN junction in AlGaN/GaN was attributed to TiSix in the metallic regions. Microstructural changes were detected by systematic physical characterization.

Original languageEnglish
Article number055002
JournalSemiconductor Science and Technology
Volume31
Issue number5
DOIs
Publication statusPublished - 2016 Mar 11

Fingerprint

Ohmic contacts
Contact resistance
contact resistance
Heterojunctions
electric contacts
Metals
Metallizing
CMOS
metals
aluminum gallium nitride
Oxide semiconductors

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Cite this

Yoon, Seonno ; Song, Yunwon ; Lee, Seung Min ; Lee, Hi Deok ; Oh, Jungwoo. / Localized TiSi and TiN phases in Si/Ti/Al/Cu Ohmic contacts to AlGaN/GaN heterostructures. In: Semiconductor Science and Technology. 2016 ; Vol. 31, No. 5.
@article{dfbb1f7d440a401ca0ab34578d260f9b,
title = "Localized TiSi and TiN phases in Si/Ti/Al/Cu Ohmic contacts to AlGaN/GaN heterostructures",
abstract = "Microstructural changes in Si/Ti/Al/Cu (10/40/60/50 nm) Ohmic contacts to AlGaN/GaN heterostructure were investigated for complementary metal-oxide semiconductor compatible processes. Si/Ti/Al/Cu metallization exhibited a low specific contact resistance of 3.6 × 10-6 Ω-cm2 and contact resistance of 0.46 Ω-mm when a Si interfacial layer was used. Without a designated barrier metal, TiSix alloys that formed in the metallic region effectively suppressed Cu diffusion. The shallow TiN junction in AlGaN/GaN was attributed to TiSix in the metallic regions. Microstructural changes were detected by systematic physical characterization.",
author = "Seonno Yoon and Yunwon Song and Lee, {Seung Min} and Lee, {Hi Deok} and Jungwoo Oh",
year = "2016",
month = "3",
day = "11",
doi = "10.1088/0268-1242/31/5/055002",
language = "English",
volume = "31",
journal = "Semiconductor Science and Technology",
issn = "0268-1242",
publisher = "IOP Publishing Ltd.",
number = "5",

}

Localized TiSi and TiN phases in Si/Ti/Al/Cu Ohmic contacts to AlGaN/GaN heterostructures. / Yoon, Seonno; Song, Yunwon; Lee, Seung Min; Lee, Hi Deok; Oh, Jungwoo.

In: Semiconductor Science and Technology, Vol. 31, No. 5, 055002, 11.03.2016.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Localized TiSi and TiN phases in Si/Ti/Al/Cu Ohmic contacts to AlGaN/GaN heterostructures

AU - Yoon, Seonno

AU - Song, Yunwon

AU - Lee, Seung Min

AU - Lee, Hi Deok

AU - Oh, Jungwoo

PY - 2016/3/11

Y1 - 2016/3/11

N2 - Microstructural changes in Si/Ti/Al/Cu (10/40/60/50 nm) Ohmic contacts to AlGaN/GaN heterostructure were investigated for complementary metal-oxide semiconductor compatible processes. Si/Ti/Al/Cu metallization exhibited a low specific contact resistance of 3.6 × 10-6 Ω-cm2 and contact resistance of 0.46 Ω-mm when a Si interfacial layer was used. Without a designated barrier metal, TiSix alloys that formed in the metallic region effectively suppressed Cu diffusion. The shallow TiN junction in AlGaN/GaN was attributed to TiSix in the metallic regions. Microstructural changes were detected by systematic physical characterization.

AB - Microstructural changes in Si/Ti/Al/Cu (10/40/60/50 nm) Ohmic contacts to AlGaN/GaN heterostructure were investigated for complementary metal-oxide semiconductor compatible processes. Si/Ti/Al/Cu metallization exhibited a low specific contact resistance of 3.6 × 10-6 Ω-cm2 and contact resistance of 0.46 Ω-mm when a Si interfacial layer was used. Without a designated barrier metal, TiSix alloys that formed in the metallic region effectively suppressed Cu diffusion. The shallow TiN junction in AlGaN/GaN was attributed to TiSix in the metallic regions. Microstructural changes were detected by systematic physical characterization.

UR - http://www.scopus.com/inward/record.url?scp=84963904736&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84963904736&partnerID=8YFLogxK

U2 - 10.1088/0268-1242/31/5/055002

DO - 10.1088/0268-1242/31/5/055002

M3 - Article

AN - SCOPUS:84963904736

VL - 31

JO - Semiconductor Science and Technology

JF - Semiconductor Science and Technology

SN - 0268-1242

IS - 5

M1 - 055002

ER -