Microstructural changes in Si/Ti/Al/Cu (10/40/60/50 nm) Ohmic contacts to AlGaN/GaN heterostructure were investigated for complementary metal-oxide semiconductor compatible processes. Si/Ti/Al/Cu metallization exhibited a low specific contact resistance of 3.6 × 10-6 Ω-cm2 and contact resistance of 0.46 Ω-mm when a Si interfacial layer was used. Without a designated barrier metal, TiSix alloys that formed in the metallic region effectively suppressed Cu diffusion. The shallow TiN junction in AlGaN/GaN was attributed to TiSix in the metallic regions. Microstructural changes were detected by systematic physical characterization.
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Acknowledgements This work was partly supported by the IT R&D program of MOTIE/KEIT (10048931, The development of epi-growth analysis for next generation semiconductor and power semiconductor fundamental technology), the Future Semiconductor Device Technology Development Program (10048536) funded by MOTIE and KSRC, and the MSIP, Korea, under the IT Consilience Creative Program (NIPA- 2014-H0201-14-1001) supervised by NIPA.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry