Localized TiSi and TiN phases in Si/Ti/Al/Cu Ohmic contacts to AlGaN/GaN heterostructures

Seonno Yoon, Yunwon Song, Seung Min Lee, Hi Deok Lee, Jungwoo Oh

Research output: Contribution to journalArticle

5 Citations (Scopus)


Microstructural changes in Si/Ti/Al/Cu (10/40/60/50 nm) Ohmic contacts to AlGaN/GaN heterostructure were investigated for complementary metal-oxide semiconductor compatible processes. Si/Ti/Al/Cu metallization exhibited a low specific contact resistance of 3.6 × 10-6 Ω-cm2 and contact resistance of 0.46 Ω-mm when a Si interfacial layer was used. Without a designated barrier metal, TiSix alloys that formed in the metallic region effectively suppressed Cu diffusion. The shallow TiN junction in AlGaN/GaN was attributed to TiSix in the metallic regions. Microstructural changes were detected by systematic physical characterization.

Original languageEnglish
Article number055002
JournalSemiconductor Science and Technology
Issue number5
Publication statusPublished - 2016 Mar 11

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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