Lone-pair effect on carrier capture in Cu 2 ZnSnS 4 solar cells

Sunghyun Kim, Ji Sang Park, Samantha N. Hood, Aron Walsh

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

The performance of kesterite thin-film solar cells is limited by a low open-circuit voltage due to defect-mediated electron-hole recombination. We calculate the non-radiative carrier-capture cross sections and Shockley-Read-Hall recombination coefficients of deep-level point defects in Cu 2 ZnSnS 4 (CZTS) from first-principles. While the oxidation state of Sn is +4 in stoichiometric CZTS, inert lone pair (5s 2 ) formation lowers the oxidation state to +2. The stability of the lone pair suppresses the ionization of certain point defects, inducing charge transition levels deep in the band gap. We find large lattice distortions associated with the lone-pair defect centers due to the difference in ionic radii between Sn(ii) and Sn(iv). The combination of a deep trap level and large lattice distortion facilitates efficient non-radiative carrier capture, with capture cross-sections exceeding 10 -12 cm 2 . The results highlight a connection between redox active cations and 'killer' defect centres that form giant carrier traps. This lone pair effect will be relevant to other emerging photovoltaic materials containing ns 2 cations.

Original languageEnglish
Pages (from-to)2686-2693
Number of pages8
JournalJournal of Materials Chemistry A
Volume7
Issue number6
DOIs
Publication statusPublished - 2019 Jan 1

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Solar cells
Point defects
Defects
Cations
Positive ions
Oxidation
Open circuit voltage
Electron transitions
Ionization
Energy gap
Electrons
Oxidation-Reduction
Thin film solar cells

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Renewable Energy, Sustainability and the Environment
  • Materials Science(all)

Cite this

Kim, Sunghyun ; Park, Ji Sang ; Hood, Samantha N. ; Walsh, Aron. / Lone-pair effect on carrier capture in Cu 2 ZnSnS 4 solar cells In: Journal of Materials Chemistry A. 2019 ; Vol. 7, No. 6. pp. 2686-2693.
@article{4c6bd9596ebd4fc3b44764a29eb138f9,
title = "Lone-pair effect on carrier capture in Cu 2 ZnSnS 4 solar cells",
abstract = "The performance of kesterite thin-film solar cells is limited by a low open-circuit voltage due to defect-mediated electron-hole recombination. We calculate the non-radiative carrier-capture cross sections and Shockley-Read-Hall recombination coefficients of deep-level point defects in Cu 2 ZnSnS 4 (CZTS) from first-principles. While the oxidation state of Sn is +4 in stoichiometric CZTS, inert lone pair (5s 2 ) formation lowers the oxidation state to +2. The stability of the lone pair suppresses the ionization of certain point defects, inducing charge transition levels deep in the band gap. We find large lattice distortions associated with the lone-pair defect centers due to the difference in ionic radii between Sn(ii) and Sn(iv). The combination of a deep trap level and large lattice distortion facilitates efficient non-radiative carrier capture, with capture cross-sections exceeding 10 -12 cm 2 . The results highlight a connection between redox active cations and 'killer' defect centres that form giant carrier traps. This lone pair effect will be relevant to other emerging photovoltaic materials containing ns 2 cations.",
author = "Sunghyun Kim and Park, {Ji Sang} and Hood, {Samantha N.} and Aron Walsh",
year = "2019",
month = "1",
day = "1",
doi = "10.1039/c8ta10130b",
language = "English",
volume = "7",
pages = "2686--2693",
journal = "Journal of Materials Chemistry A",
issn = "2050-7488",
publisher = "Royal Society of Chemistry",
number = "6",

}

Lone-pair effect on carrier capture in Cu 2 ZnSnS 4 solar cells . / Kim, Sunghyun; Park, Ji Sang; Hood, Samantha N.; Walsh, Aron.

In: Journal of Materials Chemistry A, Vol. 7, No. 6, 01.01.2019, p. 2686-2693.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Lone-pair effect on carrier capture in Cu 2 ZnSnS 4 solar cells

AU - Kim, Sunghyun

AU - Park, Ji Sang

AU - Hood, Samantha N.

AU - Walsh, Aron

PY - 2019/1/1

Y1 - 2019/1/1

N2 - The performance of kesterite thin-film solar cells is limited by a low open-circuit voltage due to defect-mediated electron-hole recombination. We calculate the non-radiative carrier-capture cross sections and Shockley-Read-Hall recombination coefficients of deep-level point defects in Cu 2 ZnSnS 4 (CZTS) from first-principles. While the oxidation state of Sn is +4 in stoichiometric CZTS, inert lone pair (5s 2 ) formation lowers the oxidation state to +2. The stability of the lone pair suppresses the ionization of certain point defects, inducing charge transition levels deep in the band gap. We find large lattice distortions associated with the lone-pair defect centers due to the difference in ionic radii between Sn(ii) and Sn(iv). The combination of a deep trap level and large lattice distortion facilitates efficient non-radiative carrier capture, with capture cross-sections exceeding 10 -12 cm 2 . The results highlight a connection between redox active cations and 'killer' defect centres that form giant carrier traps. This lone pair effect will be relevant to other emerging photovoltaic materials containing ns 2 cations.

AB - The performance of kesterite thin-film solar cells is limited by a low open-circuit voltage due to defect-mediated electron-hole recombination. We calculate the non-radiative carrier-capture cross sections and Shockley-Read-Hall recombination coefficients of deep-level point defects in Cu 2 ZnSnS 4 (CZTS) from first-principles. While the oxidation state of Sn is +4 in stoichiometric CZTS, inert lone pair (5s 2 ) formation lowers the oxidation state to +2. The stability of the lone pair suppresses the ionization of certain point defects, inducing charge transition levels deep in the band gap. We find large lattice distortions associated with the lone-pair defect centers due to the difference in ionic radii between Sn(ii) and Sn(iv). The combination of a deep trap level and large lattice distortion facilitates efficient non-radiative carrier capture, with capture cross-sections exceeding 10 -12 cm 2 . The results highlight a connection between redox active cations and 'killer' defect centres that form giant carrier traps. This lone pair effect will be relevant to other emerging photovoltaic materials containing ns 2 cations.

UR - http://www.scopus.com/inward/record.url?scp=85061157308&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85061157308&partnerID=8YFLogxK

U2 - 10.1039/c8ta10130b

DO - 10.1039/c8ta10130b

M3 - Article

AN - SCOPUS:85061157308

VL - 7

SP - 2686

EP - 2693

JO - Journal of Materials Chemistry A

JF - Journal of Materials Chemistry A

SN - 2050-7488

IS - 6

ER -