Long-channel InAlAs/InGaAs/InAlAs single-quantum-well MISFETs with subthreshold swing of 61 mV/decade and effective mobility of 11 900 cm2 V-1 • s-1

In Geun Lee, Hyeon Bhin Jo, Do Young Yun, Chan Soo Shin, Jung Hee Lee, Tae Woo Kim, Dae Hong Ko, Dae Hyun Kim

Research output: Contribution to journalArticle

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Abstract

We report In0.52Al0.48As/In0.7Ga0.3As/In0.52Al0.48As single-quantum-well metal-insulator-semiconductor field-effect transistors (MISFETs) with a selective source/drain regrowth process. Long-channel InGaAs MISFETs yielded a subthreshold swing (S) of 61 mV/decade at VDS = 0.05 V and room temperature, and displayed very little frequency dispersion behavior in capacitance-voltage (CV) characteristics in both the strong-inversion and weak-inversion regimes. Both the S and CV results reflect the excellent interface quality between a molecular beam epitaxy-grown InAlAs insulator and an InGaAs channel. The devices showed as little as 0.8% per decade of frequency dispersion at the maximum gate capacitance in the strong-inversion regime. Moreover, the fabricated devices yielded an effective mobility (μ n-eff) of 11 900 cm2 V-1 • s-1 at room temperature, and degradation of μ n-eff with V GS in the strong-inversion regime was negligible. These results are a consequence of the small interfacial state density and the smooth surface morphology at the interface.

Original languageEnglish
Article number064003
JournalApplied Physics Express
Volume12
Issue number6
DOIs
Publication statusPublished - 2019 Jan 1

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MISFET devices
MIS (semiconductors)
Semiconductor quantum wells
Capacitance
field effect transistors
quantum wells
inversions
capacitance
Electric potential
Molecular beam epitaxy
Surface morphology
capacitance-voltage characteristics
room temperature
Degradation
Temperature
molecular beam epitaxy
insulators
degradation
electric potential

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

Lee, In Geun ; Jo, Hyeon Bhin ; Yun, Do Young ; Shin, Chan Soo ; Lee, Jung Hee ; Kim, Tae Woo ; Ko, Dae Hong ; Kim, Dae Hyun. / Long-channel InAlAs/InGaAs/InAlAs single-quantum-well MISFETs with subthreshold swing of 61 mV/decade and effective mobility of 11 900 cm2 V-1 • s-1 In: Applied Physics Express. 2019 ; Vol. 12, No. 6.
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abstract = "We report In0.52Al0.48As/In0.7Ga0.3As/In0.52Al0.48As single-quantum-well metal-insulator-semiconductor field-effect transistors (MISFETs) with a selective source/drain regrowth process. Long-channel InGaAs MISFETs yielded a subthreshold swing (S) of 61 mV/decade at VDS = 0.05 V and room temperature, and displayed very little frequency dispersion behavior in capacitance-voltage (CV) characteristics in both the strong-inversion and weak-inversion regimes. Both the S and CV results reflect the excellent interface quality between a molecular beam epitaxy-grown InAlAs insulator and an InGaAs channel. The devices showed as little as 0.8{\%} per decade of frequency dispersion at the maximum gate capacitance in the strong-inversion regime. Moreover, the fabricated devices yielded an effective mobility (μ n-eff) of 11 900 cm2 V-1 • s-1 at room temperature, and degradation of μ n-eff with V GS in the strong-inversion regime was negligible. These results are a consequence of the small interfacial state density and the smooth surface morphology at the interface.",
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Long-channel InAlAs/InGaAs/InAlAs single-quantum-well MISFETs with subthreshold swing of 61 mV/decade and effective mobility of 11 900 cm2 V-1 • s-1 . / Lee, In Geun; Jo, Hyeon Bhin; Yun, Do Young; Shin, Chan Soo; Lee, Jung Hee; Kim, Tae Woo; Ko, Dae Hong; Kim, Dae Hyun.

In: Applied Physics Express, Vol. 12, No. 6, 064003, 01.01.2019.

Research output: Contribution to journalArticle

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T1 - Long-channel InAlAs/InGaAs/InAlAs single-quantum-well MISFETs with subthreshold swing of 61 mV/decade and effective mobility of 11 900 cm2 V-1 • s-1

AU - Lee, In Geun

AU - Jo, Hyeon Bhin

AU - Yun, Do Young

AU - Shin, Chan Soo

AU - Lee, Jung Hee

AU - Kim, Tae Woo

AU - Ko, Dae Hong

AU - Kim, Dae Hyun

PY - 2019/1/1

Y1 - 2019/1/1

N2 - We report In0.52Al0.48As/In0.7Ga0.3As/In0.52Al0.48As single-quantum-well metal-insulator-semiconductor field-effect transistors (MISFETs) with a selective source/drain regrowth process. Long-channel InGaAs MISFETs yielded a subthreshold swing (S) of 61 mV/decade at VDS = 0.05 V and room temperature, and displayed very little frequency dispersion behavior in capacitance-voltage (CV) characteristics in both the strong-inversion and weak-inversion regimes. Both the S and CV results reflect the excellent interface quality between a molecular beam epitaxy-grown InAlAs insulator and an InGaAs channel. The devices showed as little as 0.8% per decade of frequency dispersion at the maximum gate capacitance in the strong-inversion regime. Moreover, the fabricated devices yielded an effective mobility (μ n-eff) of 11 900 cm2 V-1 • s-1 at room temperature, and degradation of μ n-eff with V GS in the strong-inversion regime was negligible. These results are a consequence of the small interfacial state density and the smooth surface morphology at the interface.

AB - We report In0.52Al0.48As/In0.7Ga0.3As/In0.52Al0.48As single-quantum-well metal-insulator-semiconductor field-effect transistors (MISFETs) with a selective source/drain regrowth process. Long-channel InGaAs MISFETs yielded a subthreshold swing (S) of 61 mV/decade at VDS = 0.05 V and room temperature, and displayed very little frequency dispersion behavior in capacitance-voltage (CV) characteristics in both the strong-inversion and weak-inversion regimes. Both the S and CV results reflect the excellent interface quality between a molecular beam epitaxy-grown InAlAs insulator and an InGaAs channel. The devices showed as little as 0.8% per decade of frequency dispersion at the maximum gate capacitance in the strong-inversion regime. Moreover, the fabricated devices yielded an effective mobility (μ n-eff) of 11 900 cm2 V-1 • s-1 at room temperature, and degradation of μ n-eff with V GS in the strong-inversion regime was negligible. These results are a consequence of the small interfacial state density and the smooth surface morphology at the interface.

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