As one of the many nano-device fabrication techniques employed in the semiconductor industry, neutral beams are being examined using various methods to solve possible charge-related problems that occur during device processing. This review introduces a neutral beam generated by surface neutralization of an ion beam using a low angle forward reflection technique and explains its application to various areas such as surface treatments and etching. The neutralization efficiency of an ion beam using a low angle forward reflection technique was approximately 99.7%. When a metal-oxide-semiconductor device was etched using a reactive neutral beam, it was confirmed that charge-related problems such as aspect-ratio-dependent etching and gate oxide charging could be removed using reactive neutral beam etching instead of conventional reactive ion etching. Neutral beams can be beneficial to other devices such as the III-V device and field emission device.
|Journal||Journal of Physics D: Applied Physics|
|Publication status||Published - 2008 Jan 21|
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Acoustics and Ultrasonics
- Surfaces, Coatings and Films