Low-Band-Gap Polymer-Based Ambipolar Transistors and Inverters Fabricated Using a Flow-Coating Method

Min Je Kim, Jae Hoon Park, Boseok Kang, Dongjin Kim, A. Ra Jung, Jeehye Yang, Moon Sung Kang, Dong Yun Lee, Kilwon Cho, Hyunjung Kim, Bongsoo Kim, Jeong Ho Cho

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

The performances of organic thin film transistors (OTFTs) produced by polymer solution casting are tightly correlated with the morphology and chain-ordering of semiconducting polymer layers, which depends on the processing conditions applied. The slow evaporation of a high boiling point (bp) solvent permits sufficient time for the assembly of polymer chains during the process, resulting in improving the film crystallinity and inducing favorable polymer chain orientations for charge transport. The use of high bp solvents, however, often results in dewetting of thin films formed on hydrophobic surfaces, such as the commonly used octadecyltrichlorosilane (ODTS)-treated SiO2 gate dielectric. Dewetting hampers the formation of uniform and highly crystalline semiconducting active channel layers. In this manuscript, we demonstrated the formation of highly crystalline dithienothienyl diketopyrrolopyrrole (TT-DPP)-based polymer films using a flow-coating method to enable the fabrication of ambipolar transistors and inverters. Importantly, unlike conventional spin-coating methods, the flow-coating method allowed us to use high bp solvents, even on a hydrophobic surface, and minimized the polymer solution waste. The crystalline orientations of the TT-DPP-based polymers were tuned depending on the solvent used (four different bp solvents were tested) and the employment of a thermal annealing step. The use of high bp solvents and thermal annealing of the polymer films significantly enhanced the crystalline microstructures in the flow-coated films, resulting in considerable carrier mobility increase in the OTFTs compared to the spin-coated films. Our simple, inexpensive, and scalable flow-coating method, for the first time employed in printing semiconducting polymers, presents a significant step toward optimizing the electrical performances of organic ambipolar transistors through organic semiconducting layer film crystallinity engineering.

Original languageEnglish
Pages (from-to)13865-13872
Number of pages8
JournalJournal of Physical Chemistry C
Volume120
Issue number26
DOIs
Publication statusPublished - 2016 Jul 7

Fingerprint

inverters
Boiling point
coating
Polymers
Transistors
Energy gap
transistors
Coatings
polymers
boiling
Semiconducting polymers
Crystalline materials
Thin film transistors
Polymer solutions
Polymer films
Annealing
drying
Gate dielectrics
crystallinity
Carrier mobility

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Energy(all)
  • Physical and Theoretical Chemistry
  • Surfaces, Coatings and Films

Cite this

Kim, Min Je ; Park, Jae Hoon ; Kang, Boseok ; Kim, Dongjin ; Jung, A. Ra ; Yang, Jeehye ; Kang, Moon Sung ; Lee, Dong Yun ; Cho, Kilwon ; Kim, Hyunjung ; Kim, Bongsoo ; Cho, Jeong Ho. / Low-Band-Gap Polymer-Based Ambipolar Transistors and Inverters Fabricated Using a Flow-Coating Method. In: Journal of Physical Chemistry C. 2016 ; Vol. 120, No. 26. pp. 13865-13872.
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abstract = "The performances of organic thin film transistors (OTFTs) produced by polymer solution casting are tightly correlated with the morphology and chain-ordering of semiconducting polymer layers, which depends on the processing conditions applied. The slow evaporation of a high boiling point (bp) solvent permits sufficient time for the assembly of polymer chains during the process, resulting in improving the film crystallinity and inducing favorable polymer chain orientations for charge transport. The use of high bp solvents, however, often results in dewetting of thin films formed on hydrophobic surfaces, such as the commonly used octadecyltrichlorosilane (ODTS)-treated SiO2 gate dielectric. Dewetting hampers the formation of uniform and highly crystalline semiconducting active channel layers. In this manuscript, we demonstrated the formation of highly crystalline dithienothienyl diketopyrrolopyrrole (TT-DPP)-based polymer films using a flow-coating method to enable the fabrication of ambipolar transistors and inverters. Importantly, unlike conventional spin-coating methods, the flow-coating method allowed us to use high bp solvents, even on a hydrophobic surface, and minimized the polymer solution waste. The crystalline orientations of the TT-DPP-based polymers were tuned depending on the solvent used (four different bp solvents were tested) and the employment of a thermal annealing step. The use of high bp solvents and thermal annealing of the polymer films significantly enhanced the crystalline microstructures in the flow-coated films, resulting in considerable carrier mobility increase in the OTFTs compared to the spin-coated films. Our simple, inexpensive, and scalable flow-coating method, for the first time employed in printing semiconducting polymers, presents a significant step toward optimizing the electrical performances of organic ambipolar transistors through organic semiconducting layer film crystallinity engineering.",
author = "Kim, {Min Je} and Park, {Jae Hoon} and Boseok Kang and Dongjin Kim and Jung, {A. Ra} and Jeehye Yang and Kang, {Moon Sung} and Lee, {Dong Yun} and Kilwon Cho and Hyunjung Kim and Bongsoo Kim and Cho, {Jeong Ho}",
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Kim, MJ, Park, JH, Kang, B, Kim, D, Jung, AR, Yang, J, Kang, MS, Lee, DY, Cho, K, Kim, H, Kim, B & Cho, JH 2016, 'Low-Band-Gap Polymer-Based Ambipolar Transistors and Inverters Fabricated Using a Flow-Coating Method', Journal of Physical Chemistry C, vol. 120, no. 26, pp. 13865-13872. https://doi.org/10.1021/acs.jpcc.6b01371

Low-Band-Gap Polymer-Based Ambipolar Transistors and Inverters Fabricated Using a Flow-Coating Method. / Kim, Min Je; Park, Jae Hoon; Kang, Boseok; Kim, Dongjin; Jung, A. Ra; Yang, Jeehye; Kang, Moon Sung; Lee, Dong Yun; Cho, Kilwon; Kim, Hyunjung; Kim, Bongsoo; Cho, Jeong Ho.

In: Journal of Physical Chemistry C, Vol. 120, No. 26, 07.07.2016, p. 13865-13872.

Research output: Contribution to journalArticle

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T1 - Low-Band-Gap Polymer-Based Ambipolar Transistors and Inverters Fabricated Using a Flow-Coating Method

AU - Kim, Min Je

AU - Park, Jae Hoon

AU - Kang, Boseok

AU - Kim, Dongjin

AU - Jung, A. Ra

AU - Yang, Jeehye

AU - Kang, Moon Sung

AU - Lee, Dong Yun

AU - Cho, Kilwon

AU - Kim, Hyunjung

AU - Kim, Bongsoo

AU - Cho, Jeong Ho

PY - 2016/7/7

Y1 - 2016/7/7

N2 - The performances of organic thin film transistors (OTFTs) produced by polymer solution casting are tightly correlated with the morphology and chain-ordering of semiconducting polymer layers, which depends on the processing conditions applied. The slow evaporation of a high boiling point (bp) solvent permits sufficient time for the assembly of polymer chains during the process, resulting in improving the film crystallinity and inducing favorable polymer chain orientations for charge transport. The use of high bp solvents, however, often results in dewetting of thin films formed on hydrophobic surfaces, such as the commonly used octadecyltrichlorosilane (ODTS)-treated SiO2 gate dielectric. Dewetting hampers the formation of uniform and highly crystalline semiconducting active channel layers. In this manuscript, we demonstrated the formation of highly crystalline dithienothienyl diketopyrrolopyrrole (TT-DPP)-based polymer films using a flow-coating method to enable the fabrication of ambipolar transistors and inverters. Importantly, unlike conventional spin-coating methods, the flow-coating method allowed us to use high bp solvents, even on a hydrophobic surface, and minimized the polymer solution waste. The crystalline orientations of the TT-DPP-based polymers were tuned depending on the solvent used (four different bp solvents were tested) and the employment of a thermal annealing step. The use of high bp solvents and thermal annealing of the polymer films significantly enhanced the crystalline microstructures in the flow-coated films, resulting in considerable carrier mobility increase in the OTFTs compared to the spin-coated films. Our simple, inexpensive, and scalable flow-coating method, for the first time employed in printing semiconducting polymers, presents a significant step toward optimizing the electrical performances of organic ambipolar transistors through organic semiconducting layer film crystallinity engineering.

AB - The performances of organic thin film transistors (OTFTs) produced by polymer solution casting are tightly correlated with the morphology and chain-ordering of semiconducting polymer layers, which depends on the processing conditions applied. The slow evaporation of a high boiling point (bp) solvent permits sufficient time for the assembly of polymer chains during the process, resulting in improving the film crystallinity and inducing favorable polymer chain orientations for charge transport. The use of high bp solvents, however, often results in dewetting of thin films formed on hydrophobic surfaces, such as the commonly used octadecyltrichlorosilane (ODTS)-treated SiO2 gate dielectric. Dewetting hampers the formation of uniform and highly crystalline semiconducting active channel layers. In this manuscript, we demonstrated the formation of highly crystalline dithienothienyl diketopyrrolopyrrole (TT-DPP)-based polymer films using a flow-coating method to enable the fabrication of ambipolar transistors and inverters. Importantly, unlike conventional spin-coating methods, the flow-coating method allowed us to use high bp solvents, even on a hydrophobic surface, and minimized the polymer solution waste. The crystalline orientations of the TT-DPP-based polymers were tuned depending on the solvent used (four different bp solvents were tested) and the employment of a thermal annealing step. The use of high bp solvents and thermal annealing of the polymer films significantly enhanced the crystalline microstructures in the flow-coated films, resulting in considerable carrier mobility increase in the OTFTs compared to the spin-coated films. Our simple, inexpensive, and scalable flow-coating method, for the first time employed in printing semiconducting polymers, presents a significant step toward optimizing the electrical performances of organic ambipolar transistors through organic semiconducting layer film crystallinity engineering.

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