Low contact resistance of NiGe/ p -Ge by indium segregation during Ni germanidation

M. Li, G. Shin, J. Lee, J. Oh, H. D. Lee

Research output: Contribution to journalArticle

Abstract

Herein, indium-doped p-type source/drain was introduced and the redistribution of indium (In) during the formation of a nickel germanide at the NiGe/Ge interface was characterized. Our results show that In segregates at the NiGe/p-Ge interface during Ni germanidation. The specific contact resistivity, ρc between the NiGe and p-Ge layer, with a substantial low value of 4.04 × 10-8 Ωcm2 was obtained with the activation by rapid thermal annealing (RTA) at 650°C for 10 s. From this result, it can be concluded that Ge p-type metal-oxide-semiconductor field-effect transistors (Ge pMOSFETs) with low parasitic resistance source/drains could be realized by this In segregation.

Original languageEnglish
Article number065312
JournalAIP Advances
Volume8
Issue number6
DOIs
Publication statusPublished - 2018 Jun 1

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contact resistance
indium
p-type semiconductors
metal oxide semiconductors
electric contacts
field effect transistors
nickel
activation
electrical resistivity
annealing

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Cite this

Li, M. ; Shin, G. ; Lee, J. ; Oh, J. ; Lee, H. D. / Low contact resistance of NiGe/ p -Ge by indium segregation during Ni germanidation. In: AIP Advances. 2018 ; Vol. 8, No. 6.
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Low contact resistance of NiGe/ p -Ge by indium segregation during Ni germanidation. / Li, M.; Shin, G.; Lee, J.; Oh, J.; Lee, H. D.

In: AIP Advances, Vol. 8, No. 6, 065312, 01.06.2018.

Research output: Contribution to journalArticle

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AU - Li, M.

AU - Shin, G.

AU - Lee, J.

AU - Oh, J.

AU - Lee, H. D.

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