Herein, indium-doped p-type source/drain was introduced and the redistribution of indium (In) during the formation of a nickel germanide at the NiGe/Ge interface was characterized. Our results show that In segregates at the NiGe/p-Ge interface during Ni germanidation. The specific contact resistivity, ρc between the NiGe and p-Ge layer, with a substantial low value of 4.04 × 10-8 Ωcm2 was obtained with the activation by rapid thermal annealing (RTA) at 650°C for 10 s. From this result, it can be concluded that Ge p-type metal-oxide-semiconductor field-effect transistors (Ge pMOSFETs) with low parasitic resistance source/drains could be realized by this In segregation.
Bibliographical noteFunding Information:
This research was supported by the Ministry of Trade, Industry and Energy (MOTIE; 10048536) and the Korea Semiconductor Research Consortium (KSRC) support program for the development of future semiconductor devices. We would like to thank Daegu centers of Korea Basic Science Institute (KBSI) for XRD and National NanoFab Center, Daejeon, South Korea for SIMS analyses.
All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)