Low interface defect density of atomic layer deposition BeO with self-cleaning reaction for InGaAs metal oxide semiconductor field effect transistors

H. S. Shin, J. H. Yum, D. W. Johnson, H. R. Harris, Todd W. Hudnall, J. Oh, P. Kirsch, W. E. Wang, C. W. Bielawski, S. K. Banerjee, J. C. Lee, H. D. Lee

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

In this paper, we discuss atomic configuration of atomic layer deposition (ALD) beryllium oxide (BeO) using the quantum chemistry to understand the theoretical origin. BeO has shorter bond length, higher reaction enthalpy, and larger bandgap energy compared with those of ALD aluminum oxide. It is shown that the excellent material properties of ALD BeO can reduce interface defect density due to the self-cleaning reaction and this contributes to the improvement of device performance of InGaAs MOSFETs. The low interface defect density and low leakage current of InGaAs MOSFET were demonstrated using X-ray photoelectron spectroscopy and the corresponding electrical results.

Original languageEnglish
Article number223504
JournalApplied Physics Letters
Volume103
Issue number22
DOIs
Publication statusPublished - 2013 Nov 25

Fingerprint

beryllium oxides
atomic layer epitaxy
metal oxide semiconductors
cleaning
field effect transistors
defects
quantum chemistry
leakage
aluminum oxides
enthalpy
photoelectron spectroscopy
configurations
x rays
energy

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

Shin, H. S. ; Yum, J. H. ; Johnson, D. W. ; Harris, H. R. ; Hudnall, Todd W. ; Oh, J. ; Kirsch, P. ; Wang, W. E. ; Bielawski, C. W. ; Banerjee, S. K. ; Lee, J. C. ; Lee, H. D. / Low interface defect density of atomic layer deposition BeO with self-cleaning reaction for InGaAs metal oxide semiconductor field effect transistors. In: Applied Physics Letters. 2013 ; Vol. 103, No. 22.
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abstract = "In this paper, we discuss atomic configuration of atomic layer deposition (ALD) beryllium oxide (BeO) using the quantum chemistry to understand the theoretical origin. BeO has shorter bond length, higher reaction enthalpy, and larger bandgap energy compared with those of ALD aluminum oxide. It is shown that the excellent material properties of ALD BeO can reduce interface defect density due to the self-cleaning reaction and this contributes to the improvement of device performance of InGaAs MOSFETs. The low interface defect density and low leakage current of InGaAs MOSFET were demonstrated using X-ray photoelectron spectroscopy and the corresponding electrical results.",
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Shin, HS, Yum, JH, Johnson, DW, Harris, HR, Hudnall, TW, Oh, J, Kirsch, P, Wang, WE, Bielawski, CW, Banerjee, SK, Lee, JC & Lee, HD 2013, 'Low interface defect density of atomic layer deposition BeO with self-cleaning reaction for InGaAs metal oxide semiconductor field effect transistors', Applied Physics Letters, vol. 103, no. 22, 223504. https://doi.org/10.1063/1.4833815

Low interface defect density of atomic layer deposition BeO with self-cleaning reaction for InGaAs metal oxide semiconductor field effect transistors. / Shin, H. S.; Yum, J. H.; Johnson, D. W.; Harris, H. R.; Hudnall, Todd W.; Oh, J.; Kirsch, P.; Wang, W. E.; Bielawski, C. W.; Banerjee, S. K.; Lee, J. C.; Lee, H. D.

In: Applied Physics Letters, Vol. 103, No. 22, 223504, 25.11.2013.

Research output: Contribution to journalArticle

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AU - Shin, H. S.

AU - Yum, J. H.

AU - Johnson, D. W.

AU - Harris, H. R.

AU - Hudnall, Todd W.

AU - Oh, J.

AU - Kirsch, P.

AU - Wang, W. E.

AU - Bielawski, C. W.

AU - Banerjee, S. K.

AU - Lee, J. C.

AU - Lee, H. D.

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