Low interface defect density of atomic layer deposition BeO with self-cleaning reaction for InGaAs metal oxide semiconductor field effect transistors

H. S. Shin, J. H. Yum, D. W. Johnson, H. R. Harris, Todd W. Hudnall, J. Oh, P. Kirsch, W. E. Wang, C. W. Bielawski, S. K. Banerjee, J. C. Lee, H. D. Lee

Research output: Contribution to journalArticlepeer-review

7 Citations (Scopus)

Abstract

In this paper, we discuss atomic configuration of atomic layer deposition (ALD) beryllium oxide (BeO) using the quantum chemistry to understand the theoretical origin. BeO has shorter bond length, higher reaction enthalpy, and larger bandgap energy compared with those of ALD aluminum oxide. It is shown that the excellent material properties of ALD BeO can reduce interface defect density due to the self-cleaning reaction and this contributes to the improvement of device performance of InGaAs MOSFETs. The low interface defect density and low leakage current of InGaAs MOSFET were demonstrated using X-ray photoelectron spectroscopy and the corresponding electrical results.

Original languageEnglish
Article number223504
JournalApplied Physics Letters
Volume103
Issue number22
DOIs
Publication statusPublished - 2013 Nov 25

Bibliographical note

Funding Information:
This research was supported in part by Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science and Technology (NRF-2012R1A1B6003567). This work was also supported in global internship program by the National Research Foundation of Korea (NRF) grant funded by the Korea government (MEST).

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Fingerprint Dive into the research topics of 'Low interface defect density of atomic layer deposition BeO with self-cleaning reaction for InGaAs metal oxide semiconductor field effect transistors'. Together they form a unique fingerprint.

Cite this