Low interface defect density of atomic layer deposition BeO with self-cleaning reaction for InGaAs metal oxide semiconductor field effect transistors

H. S. Shin, J. H. Yum, D. W. Johnson, H. R. Harris, Todd W. Hudnall, J. Oh, P. Kirsch, W. E. Wang, C. W. Bielawski, S. K. Banerjee, J. C. Lee, H. D. Lee

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Abstract

In this paper, we discuss atomic configuration of atomic layer deposition (ALD) beryllium oxide (BeO) using the quantum chemistry to understand the theoretical origin. BeO has shorter bond length, higher reaction enthalpy, and larger bandgap energy compared with those of ALD aluminum oxide. It is shown that the excellent material properties of ALD BeO can reduce interface defect density due to the self-cleaning reaction and this contributes to the improvement of device performance of InGaAs MOSFETs. The low interface defect density and low leakage current of InGaAs MOSFET were demonstrated using X-ray photoelectron spectroscopy and the corresponding electrical results.

Original languageEnglish
Article number223504
JournalApplied Physics Letters
Volume103
Issue number22
DOIs
Publication statusPublished - 2013 Nov 25

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All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

Shin, H. S., Yum, J. H., Johnson, D. W., Harris, H. R., Hudnall, T. W., Oh, J., Kirsch, P., Wang, W. E., Bielawski, C. W., Banerjee, S. K., Lee, J. C., & Lee, H. D. (2013). Low interface defect density of atomic layer deposition BeO with self-cleaning reaction for InGaAs metal oxide semiconductor field effect transistors. Applied Physics Letters, 103(22), [223504]. https://doi.org/10.1063/1.4833815