Low interface defect density of atomic layer deposition BeO with self-cleaning reaction for InGaAs metal oxide semiconductor field effect transistors

H. S. Shin, J. H. Yum, D. W. Johnson, H. R. Harris, Todd W. Hudnall, J. Oh, P. Kirsch, W. E. Wang, C. W. Bielawski, S. K. Banerjee, J. C. Lee, H. D. Lee

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