Low leakage current gate dielectrics prepared by ion beam assisted deposition for organic thin film transistors

Chang Su Kim, Sung Jin Jo, Jong Bok Kim, Seung Yoon Ryu, Joo Hyon Noh, Hong Koo Baik, Se Jong Lee, Youn Sang Kim

Research output: Contribution to journalArticlepeer-review

1 Citation (Scopus)

Abstract

This communication reports on the fabrication of low operating voltage pentacene thin-film transistors with high- k gate dielectrics by ion beam assisted deposition (IBAD). These densely packed dielectric layers by IBAD show a much lower level of leakage current than those created by e -beam evaporation. These results, from the fact that those thin films deposited with low adatom mobility, have an open structure, consisting of spherical grains with pores in between, that acts as a significant path for leakage current. By contrast, our results demonstrate the potential to limit this leakage. The field effect mobility, on/off current ratio, and subthreshold slope obtained from pentacene thin-film transistors (TFTs) were 1.14 cm2 /V s, 105, and 0.41 V/dec, respectively. Thus, the high- k gate dielectrics obtained by IBAD show promise in realizing low leakage current, low voltage, and high mobility pentacene TFTs.

Original languageEnglish
Article number126101
JournalJournal of Applied Physics
Volume102
Issue number12
DOIs
Publication statusPublished - 2007

Bibliographical note

Funding Information:
The authors gratefully acknowledge the financial support received the LG Phillips LCD and the BK 21 Program of the Ministry of Education and Human Resources Development of Korea.

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

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