Low-noise and high-linearity LNA based on InGaP/GaAs HBT for 5.3-GHz WLAN

Seong Sik Myoung, Jong Gwan Yook

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

This paper presents a low-noise and high-linearity LNA based on InGaP/GaAs HBT for 5.3-GHz WLAN. Previous LNAs based on FET series (such as HEMTs) show excellent noise characteristics, but poor linearity. The InGaP/GaAs HBT LNA shows excellent linearity and noise characteristics because of its high base-doping concentration. The proposed LNA is fully integrated in a single chip of area 0.9 × 0.9 mm2 with high-Q spiral inductors and MIM capacitors, and is biased at the current point for optimum noise figure and gain characteristics; furthermore, excellent linearity is achieved. The measured result of the proposed LNA shows 13-dB gain, 2.1-dB noise figure, and excellent linearity with IIP3 of 5.5 dBm. The figure of merit (FOM), defined as a function of the linearity and noise figure, is 20.1 dB, which is the best result among previous LNAs.

Original languageEnglish
Pages (from-to)550-553
Number of pages4
JournalMicrowave and Optical Technology Letters
Volume46
Issue number6
DOIs
Publication statusPublished - 2005 Sep 20

Fingerprint

Heterojunction bipolar transistors
Noise figure
Wireless local area networks (WLAN)
low noise
linearity
High electron mobility transistors
Field effect transistors
Capacitors
Doping (additives)
MIM (semiconductors)
inductors
high electron mobility transistors
figure of merit
gallium arsenide
Q factors
capacitors
field effect transistors
chips

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Cite this

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abstract = "This paper presents a low-noise and high-linearity LNA based on InGaP/GaAs HBT for 5.3-GHz WLAN. Previous LNAs based on FET series (such as HEMTs) show excellent noise characteristics, but poor linearity. The InGaP/GaAs HBT LNA shows excellent linearity and noise characteristics because of its high base-doping concentration. The proposed LNA is fully integrated in a single chip of area 0.9 × 0.9 mm2 with high-Q spiral inductors and MIM capacitors, and is biased at the current point for optimum noise figure and gain characteristics; furthermore, excellent linearity is achieved. The measured result of the proposed LNA shows 13-dB gain, 2.1-dB noise figure, and excellent linearity with IIP3 of 5.5 dBm. The figure of merit (FOM), defined as a function of the linearity and noise figure, is 20.1 dB, which is the best result among previous LNAs.",
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Low-noise and high-linearity LNA based on InGaP/GaAs HBT for 5.3-GHz WLAN. / Myoung, Seong Sik; Yook, Jong Gwan.

In: Microwave and Optical Technology Letters, Vol. 46, No. 6, 20.09.2005, p. 550-553.

Research output: Contribution to journalArticle

TY - JOUR

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AU - Myoung, Seong Sik

AU - Yook, Jong Gwan

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N2 - This paper presents a low-noise and high-linearity LNA based on InGaP/GaAs HBT for 5.3-GHz WLAN. Previous LNAs based on FET series (such as HEMTs) show excellent noise characteristics, but poor linearity. The InGaP/GaAs HBT LNA shows excellent linearity and noise characteristics because of its high base-doping concentration. The proposed LNA is fully integrated in a single chip of area 0.9 × 0.9 mm2 with high-Q spiral inductors and MIM capacitors, and is biased at the current point for optimum noise figure and gain characteristics; furthermore, excellent linearity is achieved. The measured result of the proposed LNA shows 13-dB gain, 2.1-dB noise figure, and excellent linearity with IIP3 of 5.5 dBm. The figure of merit (FOM), defined as a function of the linearity and noise figure, is 20.1 dB, which is the best result among previous LNAs.

AB - This paper presents a low-noise and high-linearity LNA based on InGaP/GaAs HBT for 5.3-GHz WLAN. Previous LNAs based on FET series (such as HEMTs) show excellent noise characteristics, but poor linearity. The InGaP/GaAs HBT LNA shows excellent linearity and noise characteristics because of its high base-doping concentration. The proposed LNA is fully integrated in a single chip of area 0.9 × 0.9 mm2 with high-Q spiral inductors and MIM capacitors, and is biased at the current point for optimum noise figure and gain characteristics; furthermore, excellent linearity is achieved. The measured result of the proposed LNA shows 13-dB gain, 2.1-dB noise figure, and excellent linearity with IIP3 of 5.5 dBm. The figure of merit (FOM), defined as a function of the linearity and noise figure, is 20.1 dB, which is the best result among previous LNAs.

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