Low-noise and high-linearity LNA based on InGaP/GaAs HBT for 5.3-GHz WLAN

Seong Sik Myoung; Jong Gwan Yook

doi:10.1002/mop.21047

Low-noise and high-linearity LNA based on InGaP/GaAs HBT for 5.3-GHz WLAN

Seong Sik Myoung, Jong Gwan Yook

Department of Electrical and Electronic Engineering

Research output: Contribution to journal › Article › peer-review

8 Citations (Scopus)

Abstract

This paper presents a low-noise and high-linearity LNA based on InGaP/GaAs HBT for 5.3-GHz WLAN. Previous LNAs based on FET series (such as HEMTs) show excellent noise characteristics, but poor linearity. The InGaP/GaAs HBT LNA shows excellent linearity and noise characteristics because of its high base-doping concentration. The proposed LNA is fully integrated in a single chip of area 0.9 × 0.9 mm² with high-Q spiral inductors and MIM capacitors, and is biased at the current point for optimum noise figure and gain characteristics; furthermore, excellent linearity is achieved. The measured result of the proposed LNA shows 13-dB gain, 2.1-dB noise figure, and excellent linearity with IIP3 of 5.5 dBm. The figure of merit (FOM), defined as a function of the linearity and noise figure, is 20.1 dB, which is the best result among previous LNAs.

Original language	English
Pages (from-to)	550-553
Number of pages	4
Journal	Microwave and Optical Technology Letters
Volume	46
Issue number	6
DOIs	https://doi.org/10.1002/mop.21047
Publication status	Published - 2005 Sept 20

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics
Electrical and Electronic Engineering

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10.1002/mop.21047

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title = "Low-noise and high-linearity LNA based on InGaP/GaAs HBT for 5.3-GHz WLAN",

abstract = "This paper presents a low-noise and high-linearity LNA based on InGaP/GaAs HBT for 5.3-GHz WLAN. Previous LNAs based on FET series (such as HEMTs) show excellent noise characteristics, but poor linearity. The InGaP/GaAs HBT LNA shows excellent linearity and noise characteristics because of its high base-doping concentration. The proposed LNA is fully integrated in a single chip of area 0.9 × 0.9 mm2 with high-Q spiral inductors and MIM capacitors, and is biased at the current point for optimum noise figure and gain characteristics; furthermore, excellent linearity is achieved. The measured result of the proposed LNA shows 13-dB gain, 2.1-dB noise figure, and excellent linearity with IIP3 of 5.5 dBm. The figure of merit (FOM), defined as a function of the linearity and noise figure, is 20.1 dB, which is the best result among previous LNAs.",

author = "Myoung, {Seong Sik} and Yook, {Jong Gwan}",

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T1 - Low-noise and high-linearity LNA based on InGaP/GaAs HBT for 5.3-GHz WLAN

AU - Myoung, Seong Sik

AU - Yook, Jong Gwan

PY - 2005/9/20

Y1 - 2005/9/20

N2 - This paper presents a low-noise and high-linearity LNA based on InGaP/GaAs HBT for 5.3-GHz WLAN. Previous LNAs based on FET series (such as HEMTs) show excellent noise characteristics, but poor linearity. The InGaP/GaAs HBT LNA shows excellent linearity and noise characteristics because of its high base-doping concentration. The proposed LNA is fully integrated in a single chip of area 0.9 × 0.9 mm2 with high-Q spiral inductors and MIM capacitors, and is biased at the current point for optimum noise figure and gain characteristics; furthermore, excellent linearity is achieved. The measured result of the proposed LNA shows 13-dB gain, 2.1-dB noise figure, and excellent linearity with IIP3 of 5.5 dBm. The figure of merit (FOM), defined as a function of the linearity and noise figure, is 20.1 dB, which is the best result among previous LNAs.

AB - This paper presents a low-noise and high-linearity LNA based on InGaP/GaAs HBT for 5.3-GHz WLAN. Previous LNAs based on FET series (such as HEMTs) show excellent noise characteristics, but poor linearity. The InGaP/GaAs HBT LNA shows excellent linearity and noise characteristics because of its high base-doping concentration. The proposed LNA is fully integrated in a single chip of area 0.9 × 0.9 mm2 with high-Q spiral inductors and MIM capacitors, and is biased at the current point for optimum noise figure and gain characteristics; furthermore, excellent linearity is achieved. The measured result of the proposed LNA shows 13-dB gain, 2.1-dB noise figure, and excellent linearity with IIP3 of 5.5 dBm. The figure of merit (FOM), defined as a function of the linearity and noise figure, is 20.1 dB, which is the best result among previous LNAs.

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Low-noise and high-linearity LNA based on InGaP/GaAs HBT for 5.3-GHz WLAN

Abstract

All Science Journal Classification (ASJC) codes

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