Low-noise and high-linearity LNA based on InGaP/GaAs HBT for 5.3-GHz WLAN

Seong Sik Myoung, Jong Gwan Yook

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

This paper presents a low-noise and high-linearity LNA based on InGaP/GaAs HBT for 5.3-GHz WLAN. Previous LNAs based on FET series (such as HEMTs) show excellent noise characteristics, but poor linearity. The InGaP/GaAs HBT LNA shows excellent linearity and noise characteristics because of its high base-doping concentration. The proposed LNA is fully integrated in a single chip of area 0.9 × 0.9 mm2 with high-Q spiral inductors and MIM capacitors, and is biased at the current point for optimum noise figure and gain characteristics; furthermore, excellent linearity is achieved. The measured result of the proposed LNA shows 13-dB gain, 2.1-dB noise figure, and excellent linearity with IIP3 of 5.5 dBm. The figure of merit (FOM), defined as a function of the linearity and noise figure, is 20.1 dB, which is the best result among previous LNAs.

Original languageEnglish
Pages (from-to)550-553
Number of pages4
JournalMicrowave and Optical Technology Letters
Volume46
Issue number6
DOIs
Publication statusPublished - 2005 Sep 20

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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