Low noise and high linearity LNA based on InGaP/GaAs HBT for 5.3 GHz WLAN

Seong Sik Myoung, Sang Hoon Cheon, Jong Gwan Yook

Research output: Chapter in Book/Report/Conference proceedingConference contribution

7 Citations (Scopus)

Abstract

This paper presents a low noise and high linearity LNA based on InGaP/GaAs HBT for 5.3 GHz WLAN. Previous LNAs based on FET series such as HEMT show excellent noise characteristics, but poor linearity. The InGaP/GaAs HBT LNA shows excellent linearity and noise characteristics because of its high base doping concentration. The proposed LNA is fully integrated in area of 0.9 × 0.9 mm2 single chip with high Q spiral inductors and MIM capacitors and biased at current point for optimum noise figure and gain characteristics, furthermore, excellent linearity is achieved. Measured result of the proposed LNA shows 13 dB gain, 2.1 dB noise figure, and excellent linearity in terms of IIP3 of 5.5 dBm. The figure of merit (FOM) defined as a function of the linearity and noise figure is 20.1 dB, which is the best result among previous LNAs.

Original languageEnglish
Title of host publicationGAAS 2005 Conference Proceedings - 13th European Gallium Arsenide and Other Compound Semiconductors Application Symposium
Pages89-92
Number of pages4
Publication statusPublished - 2005 Dec 1
EventGAAS 2005 - 13th European Gallium Arsenide and Other Compound Semiconductors Application Symposium - Paris, France
Duration: 2005 Oct 32005 Oct 4

Publication series

NameGAAS 2005 Conference Proceedings - 13th European Gallium Arsenide and Other Compound Semiconductors Application Symposium
Volume2005

Other

OtherGAAS 2005 - 13th European Gallium Arsenide and Other Compound Semiconductors Application Symposium
CountryFrance
CityParis
Period05/10/305/10/4

Fingerprint

Heterojunction bipolar transistors
Noise figure
Wireless local area networks (WLAN)
High electron mobility transistors
Field effect transistors
Capacitors
Doping (additives)

All Science Journal Classification (ASJC) codes

  • Engineering(all)

Cite this

Myoung, S. S., Cheon, S. H., & Yook, J. G. (2005). Low noise and high linearity LNA based on InGaP/GaAs HBT for 5.3 GHz WLAN. In GAAS 2005 Conference Proceedings - 13th European Gallium Arsenide and Other Compound Semiconductors Application Symposium (pp. 89-92). [1605101] (GAAS 2005 Conference Proceedings - 13th European Gallium Arsenide and Other Compound Semiconductors Application Symposium; Vol. 2005).
Myoung, Seong Sik ; Cheon, Sang Hoon ; Yook, Jong Gwan. / Low noise and high linearity LNA based on InGaP/GaAs HBT for 5.3 GHz WLAN. GAAS 2005 Conference Proceedings - 13th European Gallium Arsenide and Other Compound Semiconductors Application Symposium. 2005. pp. 89-92 (GAAS 2005 Conference Proceedings - 13th European Gallium Arsenide and Other Compound Semiconductors Application Symposium).
@inproceedings{20762b6aeb784b199cb155ea71678a2f,
title = "Low noise and high linearity LNA based on InGaP/GaAs HBT for 5.3 GHz WLAN",
abstract = "This paper presents a low noise and high linearity LNA based on InGaP/GaAs HBT for 5.3 GHz WLAN. Previous LNAs based on FET series such as HEMT show excellent noise characteristics, but poor linearity. The InGaP/GaAs HBT LNA shows excellent linearity and noise characteristics because of its high base doping concentration. The proposed LNA is fully integrated in area of 0.9 × 0.9 mm2 single chip with high Q spiral inductors and MIM capacitors and biased at current point for optimum noise figure and gain characteristics, furthermore, excellent linearity is achieved. Measured result of the proposed LNA shows 13 dB gain, 2.1 dB noise figure, and excellent linearity in terms of IIP3 of 5.5 dBm. The figure of merit (FOM) defined as a function of the linearity and noise figure is 20.1 dB, which is the best result among previous LNAs.",
author = "Myoung, {Seong Sik} and Cheon, {Sang Hoon} and Yook, {Jong Gwan}",
year = "2005",
month = "12",
day = "1",
language = "English",
isbn = "8890201207",
series = "GAAS 2005 Conference Proceedings - 13th European Gallium Arsenide and Other Compound Semiconductors Application Symposium",
pages = "89--92",
booktitle = "GAAS 2005 Conference Proceedings - 13th European Gallium Arsenide and Other Compound Semiconductors Application Symposium",

}

Myoung, SS, Cheon, SH & Yook, JG 2005, Low noise and high linearity LNA based on InGaP/GaAs HBT for 5.3 GHz WLAN. in GAAS 2005 Conference Proceedings - 13th European Gallium Arsenide and Other Compound Semiconductors Application Symposium., 1605101, GAAS 2005 Conference Proceedings - 13th European Gallium Arsenide and Other Compound Semiconductors Application Symposium, vol. 2005, pp. 89-92, GAAS 2005 - 13th European Gallium Arsenide and Other Compound Semiconductors Application Symposium, Paris, France, 05/10/3.

Low noise and high linearity LNA based on InGaP/GaAs HBT for 5.3 GHz WLAN. / Myoung, Seong Sik; Cheon, Sang Hoon; Yook, Jong Gwan.

GAAS 2005 Conference Proceedings - 13th European Gallium Arsenide and Other Compound Semiconductors Application Symposium. 2005. p. 89-92 1605101 (GAAS 2005 Conference Proceedings - 13th European Gallium Arsenide and Other Compound Semiconductors Application Symposium; Vol. 2005).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

TY - GEN

T1 - Low noise and high linearity LNA based on InGaP/GaAs HBT for 5.3 GHz WLAN

AU - Myoung, Seong Sik

AU - Cheon, Sang Hoon

AU - Yook, Jong Gwan

PY - 2005/12/1

Y1 - 2005/12/1

N2 - This paper presents a low noise and high linearity LNA based on InGaP/GaAs HBT for 5.3 GHz WLAN. Previous LNAs based on FET series such as HEMT show excellent noise characteristics, but poor linearity. The InGaP/GaAs HBT LNA shows excellent linearity and noise characteristics because of its high base doping concentration. The proposed LNA is fully integrated in area of 0.9 × 0.9 mm2 single chip with high Q spiral inductors and MIM capacitors and biased at current point for optimum noise figure and gain characteristics, furthermore, excellent linearity is achieved. Measured result of the proposed LNA shows 13 dB gain, 2.1 dB noise figure, and excellent linearity in terms of IIP3 of 5.5 dBm. The figure of merit (FOM) defined as a function of the linearity and noise figure is 20.1 dB, which is the best result among previous LNAs.

AB - This paper presents a low noise and high linearity LNA based on InGaP/GaAs HBT for 5.3 GHz WLAN. Previous LNAs based on FET series such as HEMT show excellent noise characteristics, but poor linearity. The InGaP/GaAs HBT LNA shows excellent linearity and noise characteristics because of its high base doping concentration. The proposed LNA is fully integrated in area of 0.9 × 0.9 mm2 single chip with high Q spiral inductors and MIM capacitors and biased at current point for optimum noise figure and gain characteristics, furthermore, excellent linearity is achieved. Measured result of the proposed LNA shows 13 dB gain, 2.1 dB noise figure, and excellent linearity in terms of IIP3 of 5.5 dBm. The figure of merit (FOM) defined as a function of the linearity and noise figure is 20.1 dB, which is the best result among previous LNAs.

UR - http://www.scopus.com/inward/record.url?scp=33847311484&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33847311484&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:33847311484

SN - 8890201207

SN - 9788890201202

T3 - GAAS 2005 Conference Proceedings - 13th European Gallium Arsenide and Other Compound Semiconductors Application Symposium

SP - 89

EP - 92

BT - GAAS 2005 Conference Proceedings - 13th European Gallium Arsenide and Other Compound Semiconductors Application Symposium

ER -

Myoung SS, Cheon SH, Yook JG. Low noise and high linearity LNA based on InGaP/GaAs HBT for 5.3 GHz WLAN. In GAAS 2005 Conference Proceedings - 13th European Gallium Arsenide and Other Compound Semiconductors Application Symposium. 2005. p. 89-92. 1605101. (GAAS 2005 Conference Proceedings - 13th European Gallium Arsenide and Other Compound Semiconductors Application Symposium).