Low phase noise CMOS distributed oscillators using mems low loss transmission lines

Eun Chul Park; Taek Sang Song; Sang Hyun Baek; Euisik Yoon

Low phase noise CMOS distributed oscillators using mems low loss transmission lines

Eun Chul Park, Taek Sang Song, Sang Hyun Baek, Euisik Yoon

Yonsei Advanced Science Institute

Research output: Contribution to journal › Conference article › peer-review

2 Citations (Scopus)

Abstract

For the first time, low noise distributed oscillators for millimeter wave signal generation have been realized by using fully IC compatible, monolithically-integrable 3-D RF MEMS transmission lines. The active core circuits of the distributed oscillators have been fabricated using 0.18 μm CMOS processes. On the top of this CMOS circuits, low-loss MEMS transmission lines have been monolithically integrated suspending by 25 μm. Phase noise of the fabricated MEMS distributed oscillators has been measured as -125.7dBc/Hz at 1MHz offset frequency from oscillation frequency of 13GHz. This is the lowest phase noise ever reported on distributed oscillators implemented in CMOS technology.

Original language	English
Pages (from-to)	645-648
Number of pages	4
Journal	Proceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS)
Publication status	Published - 2004
Event	17th IEEE International Conference on Micro Electro Mechanical Systems (MEMS): Maastricht MEMS 2004 Technical Digest - Maastricht, Netherlands Duration: 2004 Jan 25 → 2004 Jan 29

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Mechanical Engineering
Electrical and Electronic Engineering

Cite this

@article{5dffb9bac2a147879e9e71e2765364ca,

title = "Low phase noise CMOS distributed oscillators using mems low loss transmission lines",

abstract = "For the first time, low noise distributed oscillators for millimeter wave signal generation have been realized by using fully IC compatible, monolithically-integrable 3-D RF MEMS transmission lines. The active core circuits of the distributed oscillators have been fabricated using 0.18 μm CMOS processes. On the top of this CMOS circuits, low-loss MEMS transmission lines have been monolithically integrated suspending by 25 μm. Phase noise of the fabricated MEMS distributed oscillators has been measured as -125.7dBc/Hz at 1MHz offset frequency from oscillation frequency of 13GHz. This is the lowest phase noise ever reported on distributed oscillators implemented in CMOS technology.",

author = "Park, {Eun Chul} and Song, {Taek Sang} and Baek, {Sang Hyun} and Euisik Yoon",

year = "2004",

language = "English",

pages = "645--648",

journal = "Proceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS)",

issn = "1084-6999",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "17th IEEE International Conference on Micro Electro Mechanical Systems (MEMS): Maastricht MEMS 2004 Technical Digest ; Conference date: 25-01-2004 Through 29-01-2004",

}

TY - JOUR

T1 - Low phase noise CMOS distributed oscillators using mems low loss transmission lines

AU - Park, Eun Chul

AU - Song, Taek Sang

AU - Baek, Sang Hyun

AU - Yoon, Euisik

PY - 2004

Y1 - 2004

N2 - For the first time, low noise distributed oscillators for millimeter wave signal generation have been realized by using fully IC compatible, monolithically-integrable 3-D RF MEMS transmission lines. The active core circuits of the distributed oscillators have been fabricated using 0.18 μm CMOS processes. On the top of this CMOS circuits, low-loss MEMS transmission lines have been monolithically integrated suspending by 25 μm. Phase noise of the fabricated MEMS distributed oscillators has been measured as -125.7dBc/Hz at 1MHz offset frequency from oscillation frequency of 13GHz. This is the lowest phase noise ever reported on distributed oscillators implemented in CMOS technology.

AB - For the first time, low noise distributed oscillators for millimeter wave signal generation have been realized by using fully IC compatible, monolithically-integrable 3-D RF MEMS transmission lines. The active core circuits of the distributed oscillators have been fabricated using 0.18 μm CMOS processes. On the top of this CMOS circuits, low-loss MEMS transmission lines have been monolithically integrated suspending by 25 μm. Phase noise of the fabricated MEMS distributed oscillators has been measured as -125.7dBc/Hz at 1MHz offset frequency from oscillation frequency of 13GHz. This is the lowest phase noise ever reported on distributed oscillators implemented in CMOS technology.

UR - http://www.scopus.com/inward/record.url?scp=3042704278&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=3042704278&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:3042704278

SN - 1084-6999

SP - 645

EP - 648

JO - Proceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS)

JF - Proceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS)

T2 - 17th IEEE International Conference on Micro Electro Mechanical Systems (MEMS): Maastricht MEMS 2004 Technical Digest

Y2 - 25 January 2004 through 29 January 2004

ER -

Low phase noise CMOS distributed oscillators using mems low loss transmission lines

Abstract

All Science Journal Classification (ASJC) codes

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