Low phase noise CMOS distributed oscillators using mems low loss transmission lines

Eun Chul Park, Taek Sang Song, Sang Hyun Baek, Euisik Yoon

Research output: Contribution to journalConference article

2 Citations (Scopus)

Abstract

For the first time, low noise distributed oscillators for millimeter wave signal generation have been realized by using fully IC compatible, monolithically-integrable 3-D RF MEMS transmission lines. The active core circuits of the distributed oscillators have been fabricated using 0.18 μm CMOS processes. On the top of this CMOS circuits, low-loss MEMS transmission lines have been monolithically integrated suspending by 25 μm. Phase noise of the fabricated MEMS distributed oscillators has been measured as -125.7dBc/Hz at 1MHz offset frequency from oscillation frequency of 13GHz. This is the lowest phase noise ever reported on distributed oscillators implemented in CMOS technology.

Original languageEnglish
Pages (from-to)645-648
Number of pages4
JournalProceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS)
Publication statusPublished - 2004 Jul 19
Event17th IEEE International Conference on Micro Electro Mechanical Systems (MEMS): Maastricht MEMS 2004 Technical Digest - Maastricht, Netherlands
Duration: 2004 Jan 252004 Jan 29

Fingerprint

Phase noise
transmission lines
MEMS
Electric lines
CMOS
oscillators
microelectromechanical systems
Networks (circuits)
Millimeter waves
low noise
millimeter waves
oscillations

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Mechanical Engineering
  • Electrical and Electronic Engineering

Cite this

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abstract = "For the first time, low noise distributed oscillators for millimeter wave signal generation have been realized by using fully IC compatible, monolithically-integrable 3-D RF MEMS transmission lines. The active core circuits of the distributed oscillators have been fabricated using 0.18 μm CMOS processes. On the top of this CMOS circuits, low-loss MEMS transmission lines have been monolithically integrated suspending by 25 μm. Phase noise of the fabricated MEMS distributed oscillators has been measured as -125.7dBc/Hz at 1MHz offset frequency from oscillation frequency of 13GHz. This is the lowest phase noise ever reported on distributed oscillators implemented in CMOS technology.",
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journal = "Proceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS)",
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Low phase noise CMOS distributed oscillators using mems low loss transmission lines. / Park, Eun Chul; Song, Taek Sang; Baek, Sang Hyun; Yoon, Euisik.

In: Proceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS), 19.07.2004, p. 645-648.

Research output: Contribution to journalConference article

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AU - Song, Taek Sang

AU - Baek, Sang Hyun

AU - Yoon, Euisik

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AB - For the first time, low noise distributed oscillators for millimeter wave signal generation have been realized by using fully IC compatible, monolithically-integrable 3-D RF MEMS transmission lines. The active core circuits of the distributed oscillators have been fabricated using 0.18 μm CMOS processes. On the top of this CMOS circuits, low-loss MEMS transmission lines have been monolithically integrated suspending by 25 μm. Phase noise of the fabricated MEMS distributed oscillators has been measured as -125.7dBc/Hz at 1MHz offset frequency from oscillation frequency of 13GHz. This is the lowest phase noise ever reported on distributed oscillators implemented in CMOS technology.

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