Low power 60 dB gain range with 0.25 dB resolution CMOS RF programmable gain amplifier for dual-band DAB/T-DMB tuner IC

Wook Kim Tae, Kim Bonkee, Cho Youngho, Kim Seyeob, Kim Boeun, Lee Kwyro

Research output: Chapter in Book/Report/Conference proceedingConference contribution

7 Citations (Scopus)

Abstract

Low power CMOS RF digitally programmable gain amplifiers for dual-band (Band-III and L-Band) DAB/T-DMB receiver IC are implemented using 0.18 μm CMOS process. For a stable operation among large interference situation, it is required to have wide gain range and fine resolution in RF domain. In order to meet such requirements, various programmable gain amplifier architectures are proposed. Also employing a Differential Multiple Gated TRansistor (DMGTR) technique which is a differential circuit gm" cancellation method, maximum 22 dB IIP3 improvement is obtained. The IC exhibits 60 dB gain range with 0.25 dB resolution, 2.7 dB NF, -14 dBm IIP3 and 42 dB voltage gain at 22 mW power consumption for L-Band case, 50 dB gain range with 0.25 dB resolution, 3 dB NF, -5 dBm IIP3 and 28 dB voltage gain for Band-III case at 16mW power consumption.

Original languageEnglish
Title of host publication2005 IEEE Asian Solid-State Circuits Conference, ASSCC 2005
Pages133-136
Number of pages4
DOIs
Publication statusPublished - 2006 Dec 1
Event1st IEEE Asian Solid-State Circuits Conference, ASSCC 2005 - Hsinchu, Taiwan, Province of China
Duration: 2005 Nov 12005 Nov 3

Other

Other1st IEEE Asian Solid-State Circuits Conference, ASSCC 2005
CountryTaiwan, Province of China
CityHsinchu
Period05/11/105/11/3

Fingerprint

Electric power utilization
Electric potential
Transistors
Networks (circuits)

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

Tae, W. K., Bonkee, K., Youngho, C., Seyeob, K., Boeun, K., & Kwyro, L. (2006). Low power 60 dB gain range with 0.25 dB resolution CMOS RF programmable gain amplifier for dual-band DAB/T-DMB tuner IC. In 2005 IEEE Asian Solid-State Circuits Conference, ASSCC 2005 (pp. 133-136). [4017549] https://doi.org/10.1109/ASSCC.2005.251683
Tae, Wook Kim ; Bonkee, Kim ; Youngho, Cho ; Seyeob, Kim ; Boeun, Kim ; Kwyro, Lee. / Low power 60 dB gain range with 0.25 dB resolution CMOS RF programmable gain amplifier for dual-band DAB/T-DMB tuner IC. 2005 IEEE Asian Solid-State Circuits Conference, ASSCC 2005. 2006. pp. 133-136
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abstract = "Low power CMOS RF digitally programmable gain amplifiers for dual-band (Band-III and L-Band) DAB/T-DMB receiver IC are implemented using 0.18 μm CMOS process. For a stable operation among large interference situation, it is required to have wide gain range and fine resolution in RF domain. In order to meet such requirements, various programmable gain amplifier architectures are proposed. Also employing a Differential Multiple Gated TRansistor (DMGTR) technique which is a differential circuit gm{"} cancellation method, maximum 22 dB IIP3 improvement is obtained. The IC exhibits 60 dB gain range with 0.25 dB resolution, 2.7 dB NF, -14 dBm IIP3 and 42 dB voltage gain at 22 mW power consumption for L-Band case, 50 dB gain range with 0.25 dB resolution, 3 dB NF, -5 dBm IIP3 and 28 dB voltage gain for Band-III case at 16mW power consumption.",
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Tae, WK, Bonkee, K, Youngho, C, Seyeob, K, Boeun, K & Kwyro, L 2006, Low power 60 dB gain range with 0.25 dB resolution CMOS RF programmable gain amplifier for dual-band DAB/T-DMB tuner IC. in 2005 IEEE Asian Solid-State Circuits Conference, ASSCC 2005., 4017549, pp. 133-136, 1st IEEE Asian Solid-State Circuits Conference, ASSCC 2005, Hsinchu, Taiwan, Province of China, 05/11/1. https://doi.org/10.1109/ASSCC.2005.251683

Low power 60 dB gain range with 0.25 dB resolution CMOS RF programmable gain amplifier for dual-band DAB/T-DMB tuner IC. / Tae, Wook Kim; Bonkee, Kim; Youngho, Cho; Seyeob, Kim; Boeun, Kim; Kwyro, Lee.

2005 IEEE Asian Solid-State Circuits Conference, ASSCC 2005. 2006. p. 133-136 4017549.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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AU - Tae, Wook Kim

AU - Bonkee, Kim

AU - Youngho, Cho

AU - Seyeob, Kim

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N2 - Low power CMOS RF digitally programmable gain amplifiers for dual-band (Band-III and L-Band) DAB/T-DMB receiver IC are implemented using 0.18 μm CMOS process. For a stable operation among large interference situation, it is required to have wide gain range and fine resolution in RF domain. In order to meet such requirements, various programmable gain amplifier architectures are proposed. Also employing a Differential Multiple Gated TRansistor (DMGTR) technique which is a differential circuit gm" cancellation method, maximum 22 dB IIP3 improvement is obtained. The IC exhibits 60 dB gain range with 0.25 dB resolution, 2.7 dB NF, -14 dBm IIP3 and 42 dB voltage gain at 22 mW power consumption for L-Band case, 50 dB gain range with 0.25 dB resolution, 3 dB NF, -5 dBm IIP3 and 28 dB voltage gain for Band-III case at 16mW power consumption.

AB - Low power CMOS RF digitally programmable gain amplifiers for dual-band (Band-III and L-Band) DAB/T-DMB receiver IC are implemented using 0.18 μm CMOS process. For a stable operation among large interference situation, it is required to have wide gain range and fine resolution in RF domain. In order to meet such requirements, various programmable gain amplifier architectures are proposed. Also employing a Differential Multiple Gated TRansistor (DMGTR) technique which is a differential circuit gm" cancellation method, maximum 22 dB IIP3 improvement is obtained. The IC exhibits 60 dB gain range with 0.25 dB resolution, 2.7 dB NF, -14 dBm IIP3 and 42 dB voltage gain at 22 mW power consumption for L-Band case, 50 dB gain range with 0.25 dB resolution, 3 dB NF, -5 dBm IIP3 and 28 dB voltage gain for Band-III case at 16mW power consumption.

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Tae WK, Bonkee K, Youngho C, Seyeob K, Boeun K, Kwyro L. Low power 60 dB gain range with 0.25 dB resolution CMOS RF programmable gain amplifier for dual-band DAB/T-DMB tuner IC. In 2005 IEEE Asian Solid-State Circuits Conference, ASSCC 2005. 2006. p. 133-136. 4017549 https://doi.org/10.1109/ASSCC.2005.251683