Low Power Consumption Complementary Inverters with n-MoS2 and p-WSe2 Dichalcogenide Nanosheets on Glass for Logic and Light-Emitting Diode Circuits

Pyo Jin Jeon, Jin Sung Kim, June Yeong Lim, Youngsuk Cho, Atiye Pezeshki, Hee Sung Lee, Sanghyuck Yu, Sung Wook Min, Seongil Im

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77 Citations (Scopus)


Two-dimensional (2D) semiconductor materials with discrete bandgap become important because of their interesting physical properties and potentials toward future nanoscale electronics. Many 2D-based field effect transistors (FETs) have thus been reported. Several attempts to fabricate 2D complementary (CMOS) logic inverters have been made too. However, those CMOS devices seldom showed the most important advantage of typical CMOS: low power consumption. Here, we adopted p-WSe2 and n-MoS2 nanosheets separately for the channels of bottom-gate-patterned FETs, to fabricate 2D dichalcogenide-based hetero-CMOS inverters on the same glass substrate. Our hetero-CMOS inverters with electrically isolated FETs demonstrate novel and superior device performances of a maximum voltage gain as ∼27, sub-nanowatt power consumption, almost ideal noise margin approaching 0.5VDD (supply voltage, VDD = 5 V) with a transition voltage of 2.3 V, and ∼800 μs for switching delay. Moreover, our glass-substrate CMOS device nicely performed digital logic (NOT, OR, and AND) and push-pull circuits for organic light-emitting diode switching, directly displaying the prospective of practical applications.

Original languageEnglish
Pages (from-to)22333-22340
Number of pages8
JournalACS Applied Materials and Interfaces
Issue number40
Publication statusPublished - 2015 Oct 14

Bibliographical note

Publisher Copyright:
© 2015 American Chemical Society.

All Science Journal Classification (ASJC) codes

  • Materials Science(all)


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