Low-resistivity indium tantalum oxide films by magnetron sputtering

H. Ju, S. Hwang, C. O. Jeong, S. H. Park, J. G. Choi, C. Park

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

Low-resistivity Ta-doped In2O3 (InTaO) films from ceramic targets of In2O3 doped with 2, 5, and 10 wt% Ta2O5 were deposited on Corning glass # 1737 substrates by magnetron sputtering. The electrical and optical properties of these films were studied. The carrier type of InTaO films was found to be n-type. The resistivity, carrier density, and Hall mobility of InTaO films were in the range of 0.28-200.2 × 10-4 Ω cm, 0.2-7.4 × 1020 cm-3, and 3-31 cm2V-1 s-1, respectively. A minimum resistivity of 2.8 × 10-4 Ω cm with a mobility of 31 cm2V-1 s-1 and a high transparency of 85% in the visible were achieved for the InTaO thin films doped with 5 wt% Ta2O5.

Original languageEnglish
Pages (from-to)109-111
Number of pages3
JournalApplied Physics A: Materials Science and Processing
Volume79
Issue number1
DOIs
Publication statusPublished - 2004 Jun

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Materials Science(all)

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