Low-resistivity Ta-doped In2O3 (InTaO) films from ceramic targets of In2O3 doped with 2, 5, and 10 wt% Ta2O5 were deposited on Corning glass # 1737 substrates by magnetron sputtering. The electrical and optical properties of these films were studied. The carrier type of InTaO films was found to be n-type. The resistivity, carrier density, and Hall mobility of InTaO films were in the range of 0.28-200.2 × 10-4 Ω cm, 0.2-7.4 × 1020 cm-3, and 3-31 cm2V-1 s-1, respectively. A minimum resistivity of 2.8 × 10-4 Ω cm with a mobility of 31 cm2V-1 s-1 and a high transparency of 85% in the visible were achieved for the InTaO thin films doped with 5 wt% Ta2O5.
|Number of pages||3|
|Journal||Applied Physics A: Materials Science and Processing|
|Publication status||Published - 2004 Jun 1|
All Science Journal Classification (ASJC) codes
- Materials Science(all)