Low-resistivity indium tantalum oxide films by magnetron sputtering

H. Ju, S. Hwang, C. O. Jeong, S. H. Park, J. G. Choi, C. Park

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

Low-resistivity Ta-doped In2O3 (InTaO) films from ceramic targets of In2O3 doped with 2, 5, and 10 wt% Ta2O5 were deposited on Corning glass # 1737 substrates by magnetron sputtering. The electrical and optical properties of these films were studied. The carrier type of InTaO films was found to be n-type. The resistivity, carrier density, and Hall mobility of InTaO films were in the range of 0.28-200.2 × 10-4 Ω cm, 0.2-7.4 × 1020 cm-3, and 3-31 cm2V-1 s-1, respectively. A minimum resistivity of 2.8 × 10-4 Ω cm with a mobility of 31 cm2V-1 s-1 and a high transparency of 85% in the visible were achieved for the InTaO thin films doped with 5 wt% Ta2O5.

Original languageEnglish
Pages (from-to)109-111
Number of pages3
JournalApplied Physics A: Materials Science and Processing
Volume79
Issue number1
DOIs
Publication statusPublished - 2004 Jun 1

Fingerprint

Tantalum oxides
Indium
Magnetron sputtering
Oxide films
Hall mobility
Transparency
Carrier concentration
Electric properties
Optical properties
Glass
Thin films
tantalum oxide
Substrates

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Materials Science(all)

Cite this

@article{1c661b844fd9463d9c0b0997ce40e1f9,
title = "Low-resistivity indium tantalum oxide films by magnetron sputtering",
abstract = "Low-resistivity Ta-doped In2O3 (InTaO) films from ceramic targets of In2O3 doped with 2, 5, and 10 wt{\%} Ta2O5 were deposited on Corning glass # 1737 substrates by magnetron sputtering. The electrical and optical properties of these films were studied. The carrier type of InTaO films was found to be n-type. The resistivity, carrier density, and Hall mobility of InTaO films were in the range of 0.28-200.2 × 10-4 Ω cm, 0.2-7.4 × 1020 cm-3, and 3-31 cm2V-1 s-1, respectively. A minimum resistivity of 2.8 × 10-4 Ω cm with a mobility of 31 cm2V-1 s-1 and a high transparency of 85{\%} in the visible were achieved for the InTaO thin films doped with 5 wt{\%} Ta2O5.",
author = "H. Ju and S. Hwang and Jeong, {C. O.} and Park, {S. H.} and Choi, {J. G.} and C. Park",
year = "2004",
month = "6",
day = "1",
doi = "10.1007/s00339-004-2593-2",
language = "English",
volume = "79",
pages = "109--111",
journal = "Applied Physics A: Materials Science and Processing",
issn = "0947-8396",
number = "1",

}

Low-resistivity indium tantalum oxide films by magnetron sputtering. / Ju, H.; Hwang, S.; Jeong, C. O.; Park, S. H.; Choi, J. G.; Park, C.

In: Applied Physics A: Materials Science and Processing, Vol. 79, No. 1, 01.06.2004, p. 109-111.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Low-resistivity indium tantalum oxide films by magnetron sputtering

AU - Ju, H.

AU - Hwang, S.

AU - Jeong, C. O.

AU - Park, S. H.

AU - Choi, J. G.

AU - Park, C.

PY - 2004/6/1

Y1 - 2004/6/1

N2 - Low-resistivity Ta-doped In2O3 (InTaO) films from ceramic targets of In2O3 doped with 2, 5, and 10 wt% Ta2O5 were deposited on Corning glass # 1737 substrates by magnetron sputtering. The electrical and optical properties of these films were studied. The carrier type of InTaO films was found to be n-type. The resistivity, carrier density, and Hall mobility of InTaO films were in the range of 0.28-200.2 × 10-4 Ω cm, 0.2-7.4 × 1020 cm-3, and 3-31 cm2V-1 s-1, respectively. A minimum resistivity of 2.8 × 10-4 Ω cm with a mobility of 31 cm2V-1 s-1 and a high transparency of 85% in the visible were achieved for the InTaO thin films doped with 5 wt% Ta2O5.

AB - Low-resistivity Ta-doped In2O3 (InTaO) films from ceramic targets of In2O3 doped with 2, 5, and 10 wt% Ta2O5 were deposited on Corning glass # 1737 substrates by magnetron sputtering. The electrical and optical properties of these films were studied. The carrier type of InTaO films was found to be n-type. The resistivity, carrier density, and Hall mobility of InTaO films were in the range of 0.28-200.2 × 10-4 Ω cm, 0.2-7.4 × 1020 cm-3, and 3-31 cm2V-1 s-1, respectively. A minimum resistivity of 2.8 × 10-4 Ω cm with a mobility of 31 cm2V-1 s-1 and a high transparency of 85% in the visible were achieved for the InTaO thin films doped with 5 wt% Ta2O5.

UR - http://www.scopus.com/inward/record.url?scp=1842686610&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=1842686610&partnerID=8YFLogxK

U2 - 10.1007/s00339-004-2593-2

DO - 10.1007/s00339-004-2593-2

M3 - Article

AN - SCOPUS:1842686610

VL - 79

SP - 109

EP - 111

JO - Applied Physics A: Materials Science and Processing

JF - Applied Physics A: Materials Science and Processing

SN - 0947-8396

IS - 1

ER -