TY - JOUR
T1 - Low-resistivity indium tantalum oxide films by magnetron sputtering
AU - Ju, H.
AU - Hwang, S.
AU - Jeong, C. O.
AU - Park, S. H.
AU - Choi, J. G.
AU - Park, C.
PY - 2004/6
Y1 - 2004/6
N2 - Low-resistivity Ta-doped In2O3 (InTaO) films from ceramic targets of In2O3 doped with 2, 5, and 10 wt% Ta2O5 were deposited on Corning glass # 1737 substrates by magnetron sputtering. The electrical and optical properties of these films were studied. The carrier type of InTaO films was found to be n-type. The resistivity, carrier density, and Hall mobility of InTaO films were in the range of 0.28-200.2 × 10-4 Ω cm, 0.2-7.4 × 1020 cm-3, and 3-31 cm2V-1 s-1, respectively. A minimum resistivity of 2.8 × 10-4 Ω cm with a mobility of 31 cm2V-1 s-1 and a high transparency of 85% in the visible were achieved for the InTaO thin films doped with 5 wt% Ta2O5.
AB - Low-resistivity Ta-doped In2O3 (InTaO) films from ceramic targets of In2O3 doped with 2, 5, and 10 wt% Ta2O5 were deposited on Corning glass # 1737 substrates by magnetron sputtering. The electrical and optical properties of these films were studied. The carrier type of InTaO films was found to be n-type. The resistivity, carrier density, and Hall mobility of InTaO films were in the range of 0.28-200.2 × 10-4 Ω cm, 0.2-7.4 × 1020 cm-3, and 3-31 cm2V-1 s-1, respectively. A minimum resistivity of 2.8 × 10-4 Ω cm with a mobility of 31 cm2V-1 s-1 and a high transparency of 85% in the visible were achieved for the InTaO thin films doped with 5 wt% Ta2O5.
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U2 - 10.1007/s00339-004-2593-2
DO - 10.1007/s00339-004-2593-2
M3 - Article
AN - SCOPUS:1842686610
VL - 79
SP - 109
EP - 111
JO - Applied Physics A: Materials Science and Processing
JF - Applied Physics A: Materials Science and Processing
SN - 0947-8396
IS - 1
ER -