Low-resistivity indium tantalum oxide films by magnetron sputtering

H. Ju; S. Hwang; C. O. Jeong; S. H. Park; J. G. Choi; C. Park

doi:10.1007/s00339-004-2593-2

Low-resistivity indium tantalum oxide films by magnetron sputtering

H. Ju, S. Hwang, C. O. Jeong, S. H. Park, J. G. Choi, C. Park

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5 Citations (Scopus)

Abstract

Low-resistivity Ta-doped In₂O₃ (InTaO) films from ceramic targets of In₂O₃ doped with 2, 5, and 10 wt% Ta₂O₅ were deposited on Corning glass # 1737 substrates by magnetron sputtering. The electrical and optical properties of these films were studied. The carrier type of InTaO films was found to be n-type. The resistivity, carrier density, and Hall mobility of InTaO films were in the range of 0.28-200.2 × 10^-4 Ω cm, 0.2-7.4 × 10²⁰ cm^-3, and 3-31 cm²V^-1 s^-1, respectively. A minimum resistivity of 2.8 × 10^-4 Ω cm with a mobility of 31 cm²V^-1 s^-1 and a high transparency of 85% in the visible were achieved for the InTaO thin films doped with 5 wt% Ta₂O₅.

Original language	English
Pages (from-to)	109-111
Number of pages	3
Journal	Applied Physics A: Materials Science and Processing
Volume	79
Issue number	1
DOIs	https://doi.org/10.1007/s00339-004-2593-2
Publication status	Published - 2004 Jun 1

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All Science Journal Classification (ASJC) codes

Chemistry(all)
Materials Science(all)

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Ju, H., Hwang, S., Jeong, C. O., Park, S. H., Choi, J. G., & Park, C. (2004). Low-resistivity indium tantalum oxide films by magnetron sputtering. Applied Physics A: Materials Science and Processing, 79(1), 109-111. https://doi.org/10.1007/s00339-004-2593-2

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title = "Low-resistivity indium tantalum oxide films by magnetron sputtering",

abstract = "Low-resistivity Ta-doped In2O3 (InTaO) films from ceramic targets of In2O3 doped with 2, 5, and 10 wt% Ta2O5 were deposited on Corning glass # 1737 substrates by magnetron sputtering. The electrical and optical properties of these films were studied. The carrier type of InTaO films was found to be n-type. The resistivity, carrier density, and Hall mobility of InTaO films were in the range of 0.28-200.2 × 10-4 Ω cm, 0.2-7.4 × 1020 cm-3, and 3-31 cm2V-1 s-1, respectively. A minimum resistivity of 2.8 × 10-4 Ω cm with a mobility of 31 cm2V-1 s-1 and a high transparency of 85% in the visible were achieved for the InTaO thin films doped with 5 wt% Ta2O5.",

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AU - Ju, H.

AU - Hwang, S.

AU - Jeong, C. O.

AU - Park, S. H.

AU - Choi, J. G.

AU - Park, C.

PY - 2004/6/1

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N2 - Low-resistivity Ta-doped In2O3 (InTaO) films from ceramic targets of In2O3 doped with 2, 5, and 10 wt% Ta2O5 were deposited on Corning glass # 1737 substrates by magnetron sputtering. The electrical and optical properties of these films were studied. The carrier type of InTaO films was found to be n-type. The resistivity, carrier density, and Hall mobility of InTaO films were in the range of 0.28-200.2 × 10-4 Ω cm, 0.2-7.4 × 1020 cm-3, and 3-31 cm2V-1 s-1, respectively. A minimum resistivity of 2.8 × 10-4 Ω cm with a mobility of 31 cm2V-1 s-1 and a high transparency of 85% in the visible were achieved for the InTaO thin films doped with 5 wt% Ta2O5.

AB - Low-resistivity Ta-doped In2O3 (InTaO) films from ceramic targets of In2O3 doped with 2, 5, and 10 wt% Ta2O5 were deposited on Corning glass # 1737 substrates by magnetron sputtering. The electrical and optical properties of these films were studied. The carrier type of InTaO films was found to be n-type. The resistivity, carrier density, and Hall mobility of InTaO films were in the range of 0.28-200.2 × 10-4 Ω cm, 0.2-7.4 × 1020 cm-3, and 3-31 cm2V-1 s-1, respectively. A minimum resistivity of 2.8 × 10-4 Ω cm with a mobility of 31 cm2V-1 s-1 and a high transparency of 85% in the visible were achieved for the InTaO thin films doped with 5 wt% Ta2O5.

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10.1007/s00339-004-2593-2