Abstract
Low-resistivity Ta-doped Ir 2O 3 (InTaO) films were grown on Corning # 1737 glass substrates from a ceramic target of (In 0.95Ta 0.05) 2O 3 by radio-frequency magnetron sputtering. The electrical and the optical properties of these films were investigated by varying the oxygen partial pressure pO 2 (0 Torr ≤ pO 2 ≤ 1.0 × 10 -4 Torr) and the deposition temperature T S (25°C ≤ T S ≤ 350° C) during the deposition. The film grown at 350°C and pO 2 = 0 Torr showed a resistivity as low as 0.28 mΩcm with a carrier density of 7.4 × 10 20 cm -3, a Hall mobility of 30.1 cm 2V -1s -1, an optical band gap of 4.04 eV, and an average transmittance above 85 % for wavelengths between 400 and 700 nm. These values are comparable to those of optimized Sn-doped In 2O 3 (ITO).
Original language | English |
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Pages (from-to) | 148-151 |
Number of pages | 4 |
Journal | Journal of the Korean Physical Society |
Volume | 47 |
Issue number | 1 |
Publication status | Published - 2005 Jul |
All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)