Low-resistivity sputtered films of transparent conducting Ta-doped in 2O 3 oxide

Joonchul Moon, Yungsu Shin, Kwangsun Kang, Seung Han Park, Honglyoul Ju, Chang Oh Jeong, Changwoo Park

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

Low-resistivity Ta-doped Ir 2O 3 (InTaO) films were grown on Corning # 1737 glass substrates from a ceramic target of (In 0.95Ta 0.05) 2O 3 by radio-frequency magnetron sputtering. The electrical and the optical properties of these films were investigated by varying the oxygen partial pressure pO 2 (0 Torr ≤ pO 2 ≤ 1.0 × 10 -4 Torr) and the deposition temperature T S (25°C ≤ T S ≤ 350° C) during the deposition. The film grown at 350°C and pO 2 = 0 Torr showed a resistivity as low as 0.28 mΩcm with a carrier density of 7.4 × 10 20 cm -3, a Hall mobility of 30.1 cm 2V -1s -1, an optical band gap of 4.04 eV, and an average transmittance above 85 % for wavelengths between 400 and 700 nm. These values are comparable to those of optimized Sn-doped In 2O 3 (ITO).

Original languageEnglish
Pages (from-to)148-151
Number of pages4
JournalJournal of the Korean Physical Society
Volume47
Issue number1
Publication statusPublished - 2005 Jul 1

    Fingerprint

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Cite this