Abstract
Low-resistivity Ta-doped Ir 2O 3 (InTaO) films were grown on Corning # 1737 glass substrates from a ceramic target of (In 0.95Ta 0.05) 2O 3 by radio-frequency magnetron sputtering. The electrical and the optical properties of these films were investigated by varying the oxygen partial pressure pO 2 (0 Torr ≤ pO 2 ≤ 1.0 × 10 -4 Torr) and the deposition temperature T S (25°C ≤ T S ≤ 350° C) during the deposition. The film grown at 350°C and pO 2 = 0 Torr showed a resistivity as low as 0.28 mΩcm with a carrier density of 7.4 × 10 20 cm -3, a Hall mobility of 30.1 cm 2V -1s -1, an optical band gap of 4.04 eV, and an average transmittance above 85 % for wavelengths between 400 and 700 nm. These values are comparable to those of optimized Sn-doped In 2O 3 (ITO).
| Original language | English |
|---|---|
| Pages (from-to) | 148-151 |
| Number of pages | 4 |
| Journal | Journal of the Korean Physical Society |
| Volume | 47 |
| Issue number | 1 |
| Publication status | Published - 2005 Jul 1 |
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All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)
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Low-resistivity sputtered films of transparent conducting Ta-doped in 2O 3 oxide. / Moon, Joonchul; Shin, Yungsu; Kang, Kwangsun; Park, Seung Han; Ju, Honglyoul; Jeong, Chang Oh; Park, Changwoo.
In: Journal of the Korean Physical Society, Vol. 47, No. 1, 01.07.2005, p. 148-151.Research output: Contribution to journal › Article
TY - JOUR
T1 - Low-resistivity sputtered films of transparent conducting Ta-doped in 2O 3 oxide
AU - Moon, Joonchul
AU - Shin, Yungsu
AU - Kang, Kwangsun
AU - Park, Seung Han
AU - Ju, Honglyoul
AU - Jeong, Chang Oh
AU - Park, Changwoo
PY - 2005/7/1
Y1 - 2005/7/1
N2 - Low-resistivity Ta-doped Ir 2O 3 (InTaO) films were grown on Corning # 1737 glass substrates from a ceramic target of (In 0.95Ta 0.05) 2O 3 by radio-frequency magnetron sputtering. The electrical and the optical properties of these films were investigated by varying the oxygen partial pressure pO 2 (0 Torr ≤ pO 2 ≤ 1.0 × 10 -4 Torr) and the deposition temperature T S (25°C ≤ T S ≤ 350° C) during the deposition. The film grown at 350°C and pO 2 = 0 Torr showed a resistivity as low as 0.28 mΩcm with a carrier density of 7.4 × 10 20 cm -3, a Hall mobility of 30.1 cm 2V -1s -1, an optical band gap of 4.04 eV, and an average transmittance above 85 % for wavelengths between 400 and 700 nm. These values are comparable to those of optimized Sn-doped In 2O 3 (ITO).
AB - Low-resistivity Ta-doped Ir 2O 3 (InTaO) films were grown on Corning # 1737 glass substrates from a ceramic target of (In 0.95Ta 0.05) 2O 3 by radio-frequency magnetron sputtering. The electrical and the optical properties of these films were investigated by varying the oxygen partial pressure pO 2 (0 Torr ≤ pO 2 ≤ 1.0 × 10 -4 Torr) and the deposition temperature T S (25°C ≤ T S ≤ 350° C) during the deposition. The film grown at 350°C and pO 2 = 0 Torr showed a resistivity as low as 0.28 mΩcm with a carrier density of 7.4 × 10 20 cm -3, a Hall mobility of 30.1 cm 2V -1s -1, an optical band gap of 4.04 eV, and an average transmittance above 85 % for wavelengths between 400 and 700 nm. These values are comparable to those of optimized Sn-doped In 2O 3 (ITO).
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M3 - Article
AN - SCOPUS:23744438447
VL - 47
SP - 148
EP - 151
JO - Journal of the Korean Physical Society
JF - Journal of the Korean Physical Society
SN - 0374-4884
IS - 1
ER -