Low-resistivity sputtered films of transparent conducting Ta-doped in 2O 3 oxide

Joonchul Moon, Yungsu Shin, Kwangsun Kang, Seung Han Park, Honglyoul Ju, Chang Oh Jeong, Changwoo Park

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

Low-resistivity Ta-doped Ir 2O 3 (InTaO) films were grown on Corning # 1737 glass substrates from a ceramic target of (In 0.95Ta 0.05) 2O 3 by radio-frequency magnetron sputtering. The electrical and the optical properties of these films were investigated by varying the oxygen partial pressure pO 2 (0 Torr ≤ pO 2 ≤ 1.0 × 10 -4 Torr) and the deposition temperature T S (25°C ≤ T S ≤ 350° C) during the deposition. The film grown at 350°C and pO 2 = 0 Torr showed a resistivity as low as 0.28 mΩcm with a carrier density of 7.4 × 10 20 cm -3, a Hall mobility of 30.1 cm 2V -1s -1, an optical band gap of 4.04 eV, and an average transmittance above 85 % for wavelengths between 400 and 700 nm. These values are comparable to those of optimized Sn-doped In 2O 3 (ITO).

Original languageEnglish
Pages (from-to)148-151
Number of pages4
JournalJournal of the Korean Physical Society
Volume47
Issue number1
Publication statusPublished - 2005 Jul 1

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conduction
electrical resistivity
oxides
ITO (semiconductors)
partial pressure
transmittance
radio frequencies
magnetron sputtering
ceramics
optical properties
glass
oxygen
wavelengths
temperature

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Cite this

Moon, Joonchul ; Shin, Yungsu ; Kang, Kwangsun ; Park, Seung Han ; Ju, Honglyoul ; Jeong, Chang Oh ; Park, Changwoo. / Low-resistivity sputtered films of transparent conducting Ta-doped in 2O 3 oxide. In: Journal of the Korean Physical Society. 2005 ; Vol. 47, No. 1. pp. 148-151.
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abstract = "Low-resistivity Ta-doped Ir 2O 3 (InTaO) films were grown on Corning # 1737 glass substrates from a ceramic target of (In 0.95Ta 0.05) 2O 3 by radio-frequency magnetron sputtering. The electrical and the optical properties of these films were investigated by varying the oxygen partial pressure pO 2 (0 Torr ≤ pO 2 ≤ 1.0 × 10 -4 Torr) and the deposition temperature T S (25°C ≤ T S ≤ 350° C) during the deposition. The film grown at 350°C and pO 2 = 0 Torr showed a resistivity as low as 0.28 mΩcm with a carrier density of 7.4 × 10 20 cm -3, a Hall mobility of 30.1 cm 2V -1s -1, an optical band gap of 4.04 eV, and an average transmittance above 85 {\%} for wavelengths between 400 and 700 nm. These values are comparable to those of optimized Sn-doped In 2O 3 (ITO).",
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Low-resistivity sputtered films of transparent conducting Ta-doped in 2O 3 oxide. / Moon, Joonchul; Shin, Yungsu; Kang, Kwangsun; Park, Seung Han; Ju, Honglyoul; Jeong, Chang Oh; Park, Changwoo.

In: Journal of the Korean Physical Society, Vol. 47, No. 1, 01.07.2005, p. 148-151.

Research output: Contribution to journalArticle

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AU - Shin, Yungsu

AU - Kang, Kwangsun

AU - Park, Seung Han

AU - Ju, Honglyoul

AU - Jeong, Chang Oh

AU - Park, Changwoo

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