Low-resistivity Ta-doped Ir 2O 3 (InTaO) films were grown on Corning # 1737 glass substrates from a ceramic target of (In 0.95Ta 0.05) 2O 3 by radio-frequency magnetron sputtering. The electrical and the optical properties of these films were investigated by varying the oxygen partial pressure pO 2 (0 Torr ≤ pO 2 ≤ 1.0 × 10 -4 Torr) and the deposition temperature T S (25°C ≤ T S ≤ 350° C) during the deposition. The film grown at 350°C and pO 2 = 0 Torr showed a resistivity as low as 0.28 mΩcm with a carrier density of 7.4 × 10 20 cm -3, a Hall mobility of 30.1 cm 2V -1s -1, an optical band gap of 4.04 eV, and an average transmittance above 85 % for wavelengths between 400 and 700 nm. These values are comparable to those of optimized Sn-doped In 2O 3 (ITO).
|Number of pages||4|
|Journal||Journal of the Korean Physical Society|
|Publication status||Published - 2005 Jul 1|
All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)