Low search power and high reliability 13T-4R MTJ based nonvolatile ternary content-addressable memory

Hyun Kook Park, Byungkyu Song, Seong Ook Jung

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

Nonvolatile ternary content addressable-memory (NV-TCAM) has been widely researched because of its great advantages, such as, zero standby power consumption and compact area. However, previous NV-TCAMs suffer from process variation, DC current, and leakage current, leading to the search and write reliabilities degradation and high power consumption. In this paper, we propose a novel 13T-4R NV-TCAM cell with fully symmetric structure and a current limiter which improves the DC and leakage current problems of previous NV-TCAM cells. The proposed scheme is verified using HSPICE Monte Carlo simulation with 22-nm CMOS process and industry mimic MTJ model. The simulation results prove that the proposed scheme reduces the DC current by more than 60% and eliminates the leakage current, leading to the large power saving, while satisfies the target search yield of 4σ.

Original languageEnglish
Title of host publicationInternational Conference on Electronics, Information and Communication, ICEIC 2018
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages1-4
Number of pages4
Volume2018-January
ISBN (Electronic)9781538647547
DOIs
Publication statusPublished - 2018 Apr 2
Event17th International Conference on Electronics, Information and Communication, ICEIC 2018 - Honolulu, United States
Duration: 2018 Jan 242018 Jan 27

Other

Other17th International Conference on Electronics, Information and Communication, ICEIC 2018
CountryUnited States
CityHonolulu
Period18/1/2418/1/27

Fingerprint

Associative storage
Leakage currents
Electric power utilization
Limiters
Degradation
Industry

All Science Journal Classification (ASJC) codes

  • Information Systems
  • Computer Networks and Communications
  • Computer Science Applications
  • Signal Processing
  • Electrical and Electronic Engineering

Cite this

Park, H. K., Song, B., & Jung, S. O. (2018). Low search power and high reliability 13T-4R MTJ based nonvolatile ternary content-addressable memory. In International Conference on Electronics, Information and Communication, ICEIC 2018 (Vol. 2018-January, pp. 1-4). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.23919/ELINFOCOM.2018.8330716
Park, Hyun Kook ; Song, Byungkyu ; Jung, Seong Ook. / Low search power and high reliability 13T-4R MTJ based nonvolatile ternary content-addressable memory. International Conference on Electronics, Information and Communication, ICEIC 2018. Vol. 2018-January Institute of Electrical and Electronics Engineers Inc., 2018. pp. 1-4
@inproceedings{33b8590b6e8c41d187f24e1fb77918fa,
title = "Low search power and high reliability 13T-4R MTJ based nonvolatile ternary content-addressable memory",
abstract = "Nonvolatile ternary content addressable-memory (NV-TCAM) has been widely researched because of its great advantages, such as, zero standby power consumption and compact area. However, previous NV-TCAMs suffer from process variation, DC current, and leakage current, leading to the search and write reliabilities degradation and high power consumption. In this paper, we propose a novel 13T-4R NV-TCAM cell with fully symmetric structure and a current limiter which improves the DC and leakage current problems of previous NV-TCAM cells. The proposed scheme is verified using HSPICE Monte Carlo simulation with 22-nm CMOS process and industry mimic MTJ model. The simulation results prove that the proposed scheme reduces the DC current by more than 60{\%} and eliminates the leakage current, leading to the large power saving, while satisfies the target search yield of 4σ.",
author = "Park, {Hyun Kook} and Byungkyu Song and Jung, {Seong Ook}",
year = "2018",
month = "4",
day = "2",
doi = "10.23919/ELINFOCOM.2018.8330716",
language = "English",
volume = "2018-January",
pages = "1--4",
booktitle = "International Conference on Electronics, Information and Communication, ICEIC 2018",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
address = "United States",

}

Park, HK, Song, B & Jung, SO 2018, Low search power and high reliability 13T-4R MTJ based nonvolatile ternary content-addressable memory. in International Conference on Electronics, Information and Communication, ICEIC 2018. vol. 2018-January, Institute of Electrical and Electronics Engineers Inc., pp. 1-4, 17th International Conference on Electronics, Information and Communication, ICEIC 2018, Honolulu, United States, 18/1/24. https://doi.org/10.23919/ELINFOCOM.2018.8330716

Low search power and high reliability 13T-4R MTJ based nonvolatile ternary content-addressable memory. / Park, Hyun Kook; Song, Byungkyu; Jung, Seong Ook.

International Conference on Electronics, Information and Communication, ICEIC 2018. Vol. 2018-January Institute of Electrical and Electronics Engineers Inc., 2018. p. 1-4.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

TY - GEN

T1 - Low search power and high reliability 13T-4R MTJ based nonvolatile ternary content-addressable memory

AU - Park, Hyun Kook

AU - Song, Byungkyu

AU - Jung, Seong Ook

PY - 2018/4/2

Y1 - 2018/4/2

N2 - Nonvolatile ternary content addressable-memory (NV-TCAM) has been widely researched because of its great advantages, such as, zero standby power consumption and compact area. However, previous NV-TCAMs suffer from process variation, DC current, and leakage current, leading to the search and write reliabilities degradation and high power consumption. In this paper, we propose a novel 13T-4R NV-TCAM cell with fully symmetric structure and a current limiter which improves the DC and leakage current problems of previous NV-TCAM cells. The proposed scheme is verified using HSPICE Monte Carlo simulation with 22-nm CMOS process and industry mimic MTJ model. The simulation results prove that the proposed scheme reduces the DC current by more than 60% and eliminates the leakage current, leading to the large power saving, while satisfies the target search yield of 4σ.

AB - Nonvolatile ternary content addressable-memory (NV-TCAM) has been widely researched because of its great advantages, such as, zero standby power consumption and compact area. However, previous NV-TCAMs suffer from process variation, DC current, and leakage current, leading to the search and write reliabilities degradation and high power consumption. In this paper, we propose a novel 13T-4R NV-TCAM cell with fully symmetric structure and a current limiter which improves the DC and leakage current problems of previous NV-TCAM cells. The proposed scheme is verified using HSPICE Monte Carlo simulation with 22-nm CMOS process and industry mimic MTJ model. The simulation results prove that the proposed scheme reduces the DC current by more than 60% and eliminates the leakage current, leading to the large power saving, while satisfies the target search yield of 4σ.

UR - http://www.scopus.com/inward/record.url?scp=85048530338&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85048530338&partnerID=8YFLogxK

U2 - 10.23919/ELINFOCOM.2018.8330716

DO - 10.23919/ELINFOCOM.2018.8330716

M3 - Conference contribution

AN - SCOPUS:85048530338

VL - 2018-January

SP - 1

EP - 4

BT - International Conference on Electronics, Information and Communication, ICEIC 2018

PB - Institute of Electrical and Electronics Engineers Inc.

ER -

Park HK, Song B, Jung SO. Low search power and high reliability 13T-4R MTJ based nonvolatile ternary content-addressable memory. In International Conference on Electronics, Information and Communication, ICEIC 2018. Vol. 2018-January. Institute of Electrical and Electronics Engineers Inc. 2018. p. 1-4 https://doi.org/10.23919/ELINFOCOM.2018.8330716