Low Temperature activation of In-Ga-Zn-O thin film transistor using high pressure annealing

Won Gi Kim, Young Jun Tak, Tae Soo Jung, Sung Pyo Park, Heesoo Lee, Jeong Woo Park, Hyun Jae Kim

Research output: Contribution to journalConference article

Abstract

We investigated the effects of high-pressure annealing as a source of activation energy to form the amorphous indium gallium zinc oxide (a-IGZO) channel layer at 100C. Thermal activation under oxygen pressure was used to facilitate the formation of channel layer as well as to improve positive bias stress stability.

Original languageEnglish
Pages (from-to)1231-1233
Number of pages3
JournalDigest of Technical Papers - SID International Symposium
Volume46
Issue numberBook 3
Publication statusPublished - 2015 Jun 1
Event2015 SID International Symposium - San Jose, United States
Duration: 2015 Jun 4 → …

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Thin film transistors
Chemical activation
Annealing
Gallium
Zinc oxide
Indium
Activation energy
Temperature
Oxygen
Hot Temperature

All Science Journal Classification (ASJC) codes

  • Engineering(all)

Cite this

Kim, Won Gi ; Tak, Young Jun ; Jung, Tae Soo ; Park, Sung Pyo ; Lee, Heesoo ; Park, Jeong Woo ; Kim, Hyun Jae. / Low Temperature activation of In-Ga-Zn-O thin film transistor using high pressure annealing. In: Digest of Technical Papers - SID International Symposium. 2015 ; Vol. 46, No. Book 3. pp. 1231-1233.
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Low Temperature activation of In-Ga-Zn-O thin film transistor using high pressure annealing. / Kim, Won Gi; Tak, Young Jun; Jung, Tae Soo; Park, Sung Pyo; Lee, Heesoo; Park, Jeong Woo; Kim, Hyun Jae.

In: Digest of Technical Papers - SID International Symposium, Vol. 46, No. Book 3, 01.06.2015, p. 1231-1233.

Research output: Contribution to journalConference article

TY - JOUR

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AU - Kim, Won Gi

AU - Tak, Young Jun

AU - Jung, Tae Soo

AU - Park, Sung Pyo

AU - Lee, Heesoo

AU - Park, Jeong Woo

AU - Kim, Hyun Jae

PY - 2015/6/1

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AB - We investigated the effects of high-pressure annealing as a source of activation energy to form the amorphous indium gallium zinc oxide (a-IGZO) channel layer at 100C. Thermal activation under oxygen pressure was used to facilitate the formation of channel layer as well as to improve positive bias stress stability.

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