Low Temperature activation of In-Ga-Zn-O thin film transistor using high pressure annealing

Won Gi Kim, Young Jun Tak, Tae Soo Jung, Sung Pyo Park, Heesoo Lee, Jeong Woo Park, Hyun Jae Kim

Research output: Contribution to journalConference articlepeer-review

Abstract

We investigated the effects of high-pressure annealing as a source of activation energy to form the amorphous indium gallium zinc oxide (a-IGZO) channel layer at 100C. Thermal activation under oxygen pressure was used to facilitate the formation of channel layer as well as to improve positive bias stress stability.

Original languageEnglish
Pages (from-to)1231-1233
Number of pages3
JournalDigest of Technical Papers - SID International Symposium
Volume46
Issue numberBook 3
DOIs
Publication statusPublished - 2015 Jun 1
Event2015 SID International Symposium - San Jose, United States
Duration: 2015 Jun 4 → …

Bibliographical note

Funding Information:
This work was supported by Samsung Display and the National Research Foundation of Korea (NRF) grant funded by the Korea government (MSIP) (No. 2011 -0028819).

Publisher Copyright:
© 2015 SID.

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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