Low-temperature activation under 150°C for amorphous IGZO TFTs using voltage bias

Heesoo Lee, Ki Soo Chang, Young Jun Tak, Tae Soo Jung, Jeong Woo Park, Won Gi Kim, Jusung Chung, Chan Bae Jeong, Hyun Jae Kim

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Abstract

Proposed herein is a new technique of activation for the backplane of low-temperature amorphous indium gallium zinc oxide thin-film transistors (a-IGZO TFTs) by applying a bias voltage to gate, source, and drain electrodes and simultaneously annealing them at 150°C. This ‘voltage bias activation’ can be an effective method of reducing the backplane processing temperature from 300°C to 150°C. Compared with the reference a-IGZO TFTs fabricated at 300°C, the a-IGZO TFTs fabricated through voltage bias activation showed sufficient switching characteristics: 10.39 cm2/Vs field effect mobility, 0.41 V/decade subthreshold swing, and 3.65 × 107 on/off ratio. These results were analyzed thermodynamically using infrared micro-thermography. In the case of the positive gate voltage bias condition, the maximum temperature of the a-IGZO channel increased to 48°C, and this additional annealing effect and activation energy lowering compensated for the insufficient thermal energy of annealing at a low temperature (150°C). With this approach, a-IGZO TFTs were successfully fabricated at a low temperature.

Original languageEnglish
Pages (from-to)131-135
Number of pages5
JournalJournal of Information Display
Volume18
Issue number3
DOIs
Publication statusPublished - 2017 Jul 3

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All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Electrical and Electronic Engineering

Cite this

Lee, H., Chang, K. S., Tak, Y. J., Jung, T. S., Park, J. W., Kim, W. G., Chung, J., Jeong, C. B., & Kim, H. J. (2017). Low-temperature activation under 150°C for amorphous IGZO TFTs using voltage bias. Journal of Information Display, 18(3), 131-135. https://doi.org/10.1080/15980316.2017.1322152