Low temperature aluminum oxide gate dielectric on plastic film for flexible device application

Musarrat Hasan, Jonghyun Rho, Seung Youl Kang, Jong-Hyun Ahn

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

The growth of low temperature aluminum oxide gate dielectric on a plastic substrate is explored for flexible device application. Single- crystaltransferred- silicon is used as a channel layer. A plasma-deposited interfacial oxide layer is found beneficial for better device performances. Additional forming gas annealing also improved contact resistance and resulted in better passivation of defect sites, hence, enhanced performances. High mobility, high on current with large on-off ratio and low threshold voltage was achieved. The flexibility of the device is also reported. Devices show nearly no changes in electrical properties after bending the device to a strain value of up to 0.3%, corresponding to a bending radius of 4 mm.

Original languageEnglish
JournalJapanese Journal of Applied Physics
Volume49
Issue number5 PART 2
DOIs
Publication statusPublished - 2010 May 1

Fingerprint

Plastic films
polymeric films
Gate dielectrics
aluminum oxides
Aluminum
Oxides
Contact resistance
Threshold voltage
Passivation
Electric properties
Annealing
Plastics
Plasmas
Silicon
Temperature
Defects
Substrates
Gases
contact resistance
threshold voltage

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

@article{8c44dfcbf14a4cc7bbff9e15e998a0d3,
title = "Low temperature aluminum oxide gate dielectric on plastic film for flexible device application",
abstract = "The growth of low temperature aluminum oxide gate dielectric on a plastic substrate is explored for flexible device application. Single- crystaltransferred- silicon is used as a channel layer. A plasma-deposited interfacial oxide layer is found beneficial for better device performances. Additional forming gas annealing also improved contact resistance and resulted in better passivation of defect sites, hence, enhanced performances. High mobility, high on current with large on-off ratio and low threshold voltage was achieved. The flexibility of the device is also reported. Devices show nearly no changes in electrical properties after bending the device to a strain value of up to 0.3{\%}, corresponding to a bending radius of 4 mm.",
author = "Musarrat Hasan and Jonghyun Rho and Kang, {Seung Youl} and Jong-Hyun Ahn",
year = "2010",
month = "5",
day = "1",
doi = "10.1143/JJAP.49.05EA01",
language = "English",
volume = "49",
journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",
issn = "0021-4922",
publisher = "Japan Society of Applied Physics",
number = "5 PART 2",

}

Low temperature aluminum oxide gate dielectric on plastic film for flexible device application. / Hasan, Musarrat; Rho, Jonghyun; Kang, Seung Youl; Ahn, Jong-Hyun.

In: Japanese Journal of Applied Physics, Vol. 49, No. 5 PART 2, 01.05.2010.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Low temperature aluminum oxide gate dielectric on plastic film for flexible device application

AU - Hasan, Musarrat

AU - Rho, Jonghyun

AU - Kang, Seung Youl

AU - Ahn, Jong-Hyun

PY - 2010/5/1

Y1 - 2010/5/1

N2 - The growth of low temperature aluminum oxide gate dielectric on a plastic substrate is explored for flexible device application. Single- crystaltransferred- silicon is used as a channel layer. A plasma-deposited interfacial oxide layer is found beneficial for better device performances. Additional forming gas annealing also improved contact resistance and resulted in better passivation of defect sites, hence, enhanced performances. High mobility, high on current with large on-off ratio and low threshold voltage was achieved. The flexibility of the device is also reported. Devices show nearly no changes in electrical properties after bending the device to a strain value of up to 0.3%, corresponding to a bending radius of 4 mm.

AB - The growth of low temperature aluminum oxide gate dielectric on a plastic substrate is explored for flexible device application. Single- crystaltransferred- silicon is used as a channel layer. A plasma-deposited interfacial oxide layer is found beneficial for better device performances. Additional forming gas annealing also improved contact resistance and resulted in better passivation of defect sites, hence, enhanced performances. High mobility, high on current with large on-off ratio and low threshold voltage was achieved. The flexibility of the device is also reported. Devices show nearly no changes in electrical properties after bending the device to a strain value of up to 0.3%, corresponding to a bending radius of 4 mm.

UR - http://www.scopus.com/inward/record.url?scp=77953012546&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=77953012546&partnerID=8YFLogxK

U2 - 10.1143/JJAP.49.05EA01

DO - 10.1143/JJAP.49.05EA01

M3 - Article

AN - SCOPUS:77953012546

VL - 49

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

SN - 0021-4922

IS - 5 PART 2

ER -