Abstract
The growth of low temperature aluminum oxide gate dielectric on a plastic substrate is explored for flexible device application. Single- crystaltransferred- silicon is used as a channel layer. A plasma-deposited interfacial oxide layer is found beneficial for better device performances. Additional forming gas annealing also improved contact resistance and resulted in better passivation of defect sites, hence, enhanced performances. High mobility, high on current with large on-off ratio and low threshold voltage was achieved. The flexibility of the device is also reported. Devices show nearly no changes in electrical properties after bending the device to a strain value of up to 0.3%, corresponding to a bending radius of 4 mm.
| Original language | English |
|---|---|
| Journal | Japanese Journal of Applied Physics |
| Volume | 49 |
| Issue number | 5 PART 2 |
| DOIs | |
| Publication status | Published - 2010 May 1 |
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All Science Journal Classification (ASJC) codes
- Engineering(all)
- Physics and Astronomy(all)
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Low temperature aluminum oxide gate dielectric on plastic film for flexible device application. / Hasan, Musarrat; Rho, Jonghyun; Kang, Seung Youl; Ahn, Jong-Hyun.
In: Japanese Journal of Applied Physics, Vol. 49, No. 5 PART 2, 01.05.2010.Research output: Contribution to journal › Article
TY - JOUR
T1 - Low temperature aluminum oxide gate dielectric on plastic film for flexible device application
AU - Hasan, Musarrat
AU - Rho, Jonghyun
AU - Kang, Seung Youl
AU - Ahn, Jong-Hyun
PY - 2010/5/1
Y1 - 2010/5/1
N2 - The growth of low temperature aluminum oxide gate dielectric on a plastic substrate is explored for flexible device application. Single- crystaltransferred- silicon is used as a channel layer. A plasma-deposited interfacial oxide layer is found beneficial for better device performances. Additional forming gas annealing also improved contact resistance and resulted in better passivation of defect sites, hence, enhanced performances. High mobility, high on current with large on-off ratio and low threshold voltage was achieved. The flexibility of the device is also reported. Devices show nearly no changes in electrical properties after bending the device to a strain value of up to 0.3%, corresponding to a bending radius of 4 mm.
AB - The growth of low temperature aluminum oxide gate dielectric on a plastic substrate is explored for flexible device application. Single- crystaltransferred- silicon is used as a channel layer. A plasma-deposited interfacial oxide layer is found beneficial for better device performances. Additional forming gas annealing also improved contact resistance and resulted in better passivation of defect sites, hence, enhanced performances. High mobility, high on current with large on-off ratio and low threshold voltage was achieved. The flexibility of the device is also reported. Devices show nearly no changes in electrical properties after bending the device to a strain value of up to 0.3%, corresponding to a bending radius of 4 mm.
UR - http://www.scopus.com/inward/record.url?scp=77953012546&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=77953012546&partnerID=8YFLogxK
U2 - 10.1143/JJAP.49.05EA01
DO - 10.1143/JJAP.49.05EA01
M3 - Article
AN - SCOPUS:77953012546
VL - 49
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
SN - 0021-4922
IS - 5 PART 2
ER -